Intshayelelo yeSilicon Carbide Coating
I-Chemical Vapor Deposition (CVD) yethu ye-Silicon Carbide (i-SiC) iyileko ehlala ixesha elide kwaye iyakwazi ukumelana nobushushu, ilungele iindawo ezifuna ukuthotywa okuphezulu kunye nokumelana nobushushu.I-Silicon Carbide yokugqumaisetyenziswe kumaleko amancinci kwii-substrates ezahlukeneyo ngenkqubo ye-CVD, inika iimpawu zokusebenza eziphezulu.
Ezona mpawu
● -Ubunyulu obukhethekileyo: Ukuqhayisa ngokwakhiwa okucocekileyo kwe99.99995%, wethuUkwaleka kweSiCinciphisa imingcipheko yongcoliseko kwimisebenzi ye-semiconductor enovakalelo.
● -Ukuxhathisa okuPhezulu: Ibonisa ukuxhathisa okugqwesileyo kokubini ukunxiba kunye nokugqwala, iyenza igqibelele kucelomngeni lwemichiza kunye neseto seplasma.
● -High Thermal Conductivity: Iqinisekisa ukusebenza okuthembekileyo phantsi kobushushu obugqithisileyo ngenxa yeempawu zayo ezibalaseleyo ze-thermal.
● -Uzinzo lweDimensional: Igcina ingqibelelo yesakhiwo kuluhlu olubanzi lwamaqondo obushushu, ngenxa yokwandiswa kwe-thermal coefficient ephantsi.
● -Ukuqina kokuqina: Ngomlinganiselo wobulukhuni be40 GPA, i-SiC yethu yokugquma imelana nempembelelo ebalulekileyo kunye nokulimala.
● -Smooth Surface Gqiba: Ibonelela ngokugqitywa okufana nesipili, ukunciphisa ukuveliswa kwamasuntswana kunye nokuphucula ukusebenza kakuhle.
Usetyenziso
Semicera Iingubo zeSiCzisetyenziswa kwizigaba ezahlukeneyo zokwenziwa kwe-semiconductor, kubandakanywa:
● -LED Chip Fabrication
● -Ukuveliswa kwePolysilicon
● -Ukukhula kweCrystal kweSemiconductor
● -I-Silicon kunye ne-SiC Epitaxy
● -I-Thermal Oxidation kunye ne-Diffusion (TO&D)
Sinikezela ngezixhobo ezigqunywe nge-SiC ezenziwe nge-graphite ye-isostatic ephezulu yokuqina, i-carbon fiber-reinforced carbon kunye ne-4N ye-silicon carbide ehlaziyiweyo, eyenzelwe i-reactors-bed reactors,Iziguquli ze-STC-TCS, izibonisi zeyunithi ye-CZ, isikhephe se-SiC wafer, i-SiCwafer paddle, ityhubhu ye-SiC wafer, kunye nabathwali be-wafer abasetyenziswa kwi-PECVD, i-silicon epitaxy, iinkqubo ze-MOCVD.
Iingenelo
● -Ubomi Obondisiweyo: Ukunciphisa kakhulu ixesha lokunciphisa izixhobo kunye neendleko zokugcina, ukuphucula ukusebenza kakuhle kwemveliso.
● -Umgangatho ophuculweyo: Iphumeza ubunyulu obuphezulu obuyimfuneko ekusetyenzweni kwe-semiconductor, oko konyusa umgangatho wemveliso.
● -Ukwandiswa kokuSebenza: Ukwandisa iinkqubo ze-thermal kunye ne-CVD, okubangelwa amaxesha omjikelezo omfutshane kunye nezivuno eziphezulu.
IiNgcaciso zobuGcisa
● -Isakhiwo: I-FCC β isigaba se-polycrystaline, ubukhulu becala (111) ijoliswe
● -Ukuxinana: 3.21 g/cm³
● -Ubunzima: 2500 Vickes ubulukhuni (500g umthwalo)
● -Ukuqhekeka kokuqina: 3.0 MPa·m1/2
● -I-Thermal Expansion Coefficient (100–600 °C): 4.3 x 10-6k-1
● -Elastic Modulus(1300℃):435 GPA
● -Ukutyeba kwefilimu eqhelekileyo:100µm
● -Uburhabaxa boMphezulu:2-10 µm
IDatha yoBunyulu (Ilinganiswe ngokuKhanya okuKhuphayo koMaspectroscopy)
| Isiqalelo | ppm | Isiqalelo | ppm |
| Li | < 0.001 | Cu | < 0.01 |
| Be | < 0.001 | Zn | < 0.05 |
| Al | < 0.04 | Ga | < 0.01 |
| P | < 0.01 | Ge | < 0.05 |
| S | < 0.04 | As | < 0.005 |
| K | < 0.05 | In | < 0.01 |
| Ca | < 0.05 | Sn | < 0.01 |
| Ti | < 0.005 | Sb | < 0.01 |
| V | < 0.001 | W | < 0.05 |
| Cr | < 0.05 | Te | < 0.01 |
| Mn | < 0.005 | Pb | < 0.01 |
| Fe | < 0.05 | Bi | < 0.05 |
| Ni | < 0.01 |
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