I-atomic layer deposition (ALD) bubuchwephesha bokubekwa komphunga bekhemikhali okhulisa iifilim ezibhityileyo ngokomaleko ngokutshintshana ngokutofa iimolekyuli ezimbini okanye ezingaphezulu zezandulela. I-ALD ineenzuzo zokulawulwa okuphezulu kunye nokufana, kwaye inokusetyenziswa ngokubanzi kwizixhobo ze-semiconductor, izixhobo ze-optoelectronic, izixhobo zokugcina amandla kunye nezinye iindawo. Imigaqo eyisiseko ye-ALD ibandakanya i-precursor adsorption, i-surface reaction kunye nokususwa kwemveliso, kunye nezixhobo ezininzi ze-layer zinokubunjwa ngokuphinda la manyathelo kumjikelezo. I-ALD ineempawu kunye neenzuzo zokulawulwa okuphezulu, ukufana, kunye nesakhiwo esingenalo i-porous, kwaye ingasetyenziselwa ukubeka izinto ezahlukeneyo ze-substrate kunye nezixhobo ezahlukeneyo.
I-ALD inezi mpawu zilandelayo kunye neenzuzo:
1. Ukulawulwa okuphezulu:Ekubeni i-ALD yinkqubo yokukhula kwe-layer-by-layer, ubukhulu kunye nokuqulunqwa komgangatho ngamnye wezinto eziphathekayo kunokulawulwa ngokuchanekileyo.
2. Ukufana:I-ALD inokufaka imathiriyeli ngokufanayo kuwo wonke umphezulu we-substrate, ukuthintela ukungalingani okunokuthi kwenzeke kwezinye iitekhnoloji zokubeka.
3. Isakhiwo esingenazimbobo:Ekubeni i-ALD ifakwe kwiiyunithi ze-athomu enye okanye i-athomu enye, ifilimu ephumayo idla ngokuba nesakhiwo esixineneyo, esingenayo i-porous.
4. Ukusebenza kakuhle kokhuseleko:I-ALD inokugubungela ngokufanelekileyo ubume bemiba yomgangatho ophezulu, njenge-nanopore arrays, izixhobo eziphezulu ze-porosity, njl.
5. Ukubaleka:I-ALD ingasetyenziselwa izinto ezahlukeneyo ze-substrate, kuquka isinyithi, i-semiconductors, iglasi, njl.
6. Ukuguquguquka:Ngokukhetha iimolekyuli ezahlukeneyo zangaphambili, izinto ezahlukeneyo ezahlukeneyo zinokufakwa kwinkqubo ye-ALD, njengee-oxide zetsimbi, i-sulfides, i-nitrides, njl.