I-Semicera ye-8 Intshi ye-N-uhlobo lwe-SiC Wafers ihamba phambili kwi-semiconductor innovation, inika isiseko esiluqilima sophuhliso lwezixhobo zombane eziphezulu zokusebenza. Ezi wafers ziyilelwe ukuhlangabezana neemfuno ezingqongqo zosetyenziso lwe-elektroniki lwale mihla, ukusuka kumbane wombane ukuya kwiisekethe ezisebenza ngamandla.
I-doping yodidi lwe-N kwezi ziqwenga ze-SiC zongeza ukuhanjiswa kombane, zizenze zilungele uluhlu olubanzi lwezicelo, kubandakanywa ii-diodes zamandla, ii-transistors, kunye ne-amplifiers. I-conductivity ephezulu iqinisekisa ukulahlekelwa kwamandla amancinci kunye nokusebenza ngokufanelekileyo, okubalulekileyo kwizixhobo ezisebenza kwiifrikhwensi eziphezulu kunye namanqanaba ombane.
I-Semicera isebenzisa ubuchule obuphezulu bokuvelisa ukuvelisa ii-wafers ze-SiC ezinokufana okukhethekileyo komphezulu kunye neziphene ezincinci. Eli nqanaba lokuchaneka liyimfuneko kwizicelo ezifuna ukusebenza okungaguqukiyo kunye nokuqina, njengakwi-aerospace, i-automotive, kunye nemizi-mveliso yonxibelelwano.
Ukubandakanya i-Semicera ye-8 Intshi ye-N-uhlobo lwe-SiC Wafers kumgca wakho wokuvelisa inika isiseko sokudala amacandelo anokumelana neendawo ezinzima kunye nokushisa okuphezulu. Ezi wafers zifanelekile kwizicelo kuguqulo lwamandla, itekhnoloji yeRF, kunye nezinye iindawo ezifunayo.
Ukukhetha i-Semicera's 8 Intshi ye-N-uhlobo lweSiC Wafers kuthetha ukutyala imali kwimveliso edibanisa isayensi yezinto ezikumgangatho ophezulu kunye nobunjineli obuchanekileyo. I-Semicera izibophelele ekuqhubeleni phambili amandla etekhnoloji ye-semiconductor, inikezela ngezisombululo ezongeza ukusebenza kakuhle kunye nokuthembeka kwezixhobo zakho zombane.
| Izinto | Imveliso | Uphando | Dummy |
| Iiparamitha zeCrystal | |||
| Iipolytype | 4H | ||
| Imposiso yokuma kumphezulu | <11-20>4±0.15° | ||
| Iiparamitha zoMbane | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukuxhathisa | 0.015-0.025ohm · cm | ||
| IiParameters zoomatshini | |||
| Ububanzi | 150.0±0.2mm | ||
| Ukutyeba | 350±25 μm | ||
| Ukuqhelaniswa neflethi ephambili | [1-100] ± 5 ° | ||
| Ubude beflethi bokuqala | 47.5±1.5mm | ||
| Iflethi yesibini | Akukho nanye | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Ukuqubuda | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Ngaphambili(Si-face) uburhabaxa(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Ulwakhiwo | |||
| Ukuxinana kweMibhobho | <1 iya/cm2 | <10 i/cm2 | <15 i/cm2 |
| Ukungcola kwesinyithi | ≤5E10athom/cm2 | NA | |
| I-BPD | ≤1500 i-ea/cm2 | ≤3000 i/cm2 | NA |
| TSD | ≤500 i/cm2 | ≤1000 nge-cm2 | NA |
| Umgangatho wangaphambili | |||
| Ngaphambili | Si | ||
| Ukugqitywa komphezulu | Si-ubuso CMP | ||
| Amacandelo | ≤60ea/wafer (ubukhulu≥0.3μm) | NA | |
| Imikrwelo | ≤5ea/mm. Ubude obongezelekayo ≤Ububanzi | Ubude obongezelekayo≤2*Ububanzi | NA |
| Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko | Akukho nanye | NA | |
| Iitshiphusi ze-Edge/i-idents/fracture/hex plates | Akukho nanye | ||
| Iindawo zePolytype | Akukho nanye | Indawo eyongezelekayo≤20% | Indawo eyongezelekayo≤30% |
| Ukumakishwa kwelaser yangaphambili | Akukho nanye | ||
| Umgangatho wasemva | |||
| Emva kokugqiba | C-ubuso CMP | ||
| Imikrwelo | ≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi | NA | |
| Iziphene zangasemva (iitshiphusi zomphetho/iindents) | Akukho nanye | ||
| Umqolo uburhabaxa | Ra≤0.2nm (5μm*5μm) | ||
| Ukumakishwa kwelaser yangasemva | 1 mm (ukusuka kumphetho ophezulu) | ||
| Edge | |||
| Edge | Chamfer | ||
| Ukupakishwa | |||
| Ukupakishwa | I-Epi ilungele ukupakishwa kwevacuum Ukupakishwa kweekhasethi ezininzi | ||
| *Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD. | |||
