I-Semicera's 4 Intshi ye-N-uhlobo lwe-SiC Substrates zenzelwe ukuhlangabezana nemigangatho ethe ngqo yoshishino lwesemiconductor. Ezi substrates zibonelela ngesiseko esiphezulu sokusebenza koluhlu olubanzi lwezicelo ze-elektroniki, ezinikezela nge-conductivity ekhethekileyo kunye neempawu ze-thermal.
I-N-type doping yala ma-substrates e-SiC yongeza ukuhanjiswa kwawo kombane, okwenza ukuba afaneleke ngokukodwa usetyenziso lwamandla aphezulu kunye ne-high-frequency applications. Le propati ivumela ukusebenza ngokufanelekileyo kwezixhobo ezifana ne-diode, i-transistors, kunye ne-amplifiers, apho ukunciphisa ukulahlekelwa kwamandla kubalulekile.
I-Semicera isebenzisa iinkqubo zokuvelisa zanamhlanje zokuqinisekisa ukuba i-substrate nganye ibonisa umgangatho obalaseleyo womphezulu kunye nokufana. Oku kuchanekileyo kubalulekile kwizicelo kumbane we-elektroniki, izixhobo ze-microwave, kunye nobunye ubugcisa obufuna ukusebenza okuthembekileyo phantsi kweemeko ezigqithisileyo.
Ukubandakanya i-Semicera's N-uhlobo lwe-SiC substrates kumgca wakho wokuvelisa kuthetha ukuxhamla kwizinto ezibonelela ngokutshabalalisa ubushushu obuphezulu kunye nokuzinza kombane. Ezi substrates zifanelekile ekudaleni amacandelo afuna ixesha elide kunye nokusebenza kakuhle, njengeenkqubo zokuguqula amandla kunye ne-RF amplifiers.
Ngokukhetha iSemicera's 4 Intshi N-uhlobo lweSiC Substrates, utyala imali kwimveliso edibanisa izinto ezintsha zenzululwazi kunye nobuchule bobugcisa. I-Semicera iyaqhubeka nokukhokela ishishini ngokubonelela ngezisombululo ezixhasa uphuhliso lwetekhnoloji ye-semiconductor yokusika, ukuqinisekisa ukusebenza okuphezulu kunye nokuthembeka.
| Izinto | Imveliso | Uphando | Dummy |
| Iiparamitha zeCrystal | |||
| Iipolytype | 4H | ||
| Imposiso yokuma kumphezulu | <11-20>4±0.15° | ||
| Iiparamitha zoMbane | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukuxhathisa | 0.015-0.025ohm · cm | ||
| IiParameters zoomatshini | |||
| Ububanzi | 150.0±0.2mm | ||
| Ukutyeba | 350±25 μm | ||
| Ukuqhelaniswa neflethi ephambili | [1-100] ± 5 ° | ||
| Ubude beflethi bokuqala | 47.5±1.5mm | ||
| Iflethi yesibini | Akukho nanye | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Ukuqubuda | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Ngaphambili(Si-face) uburhabaxa(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Ulwakhiwo | |||
| Ukuxinana kweMibhobho | <1 iya/cm2 | <10 i/cm2 | <15 i/cm2 |
| Ukungcola kwesinyithi | ≤5E10athom/cm2 | NA | |
| I-BPD | ≤1500 i-ea/cm2 | ≤3000 i/cm2 | NA |
| TSD | ≤500 i/cm2 | ≤1000 nge-cm2 | NA |
| Umgangatho wangaphambili | |||
| Ngaphambili | Si | ||
| Ukugqitywa komphezulu | Si-ubuso CMP | ||
| Amacandelo | ≤60ea/wafer (ubukhulu≥0.3μm) | NA | |
| Imikrwelo | ≤5ea/mm. Ubude obongezelekayo ≤Ububanzi | Ubude obongezelekayo≤2*Ububanzi | NA |
| Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko | Akukho nanye | NA | |
| Iitshiphusi ze-Edge/i-idents/fracture/hex plates | Akukho nanye | ||
| Iindawo zePolytype | Akukho nanye | Indawo eyongezelekayo≤20% | Indawo eyongezelekayo≤30% |
| Ukumakishwa kwelaser yangaphambili | Akukho nanye | ||
| Umgangatho wasemva | |||
| Emva kokugqiba | C-ubuso CMP | ||
| Imikrwelo | ≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi | NA | |
| Iziphene zangasemva (iitshiphusi zomphetho/iindents) | Akukho nanye | ||
| Umqolo uburhabaxa | Ra≤0.2nm (5μm*5μm) | ||
| Ukumakishwa kwelaser yangasemva | 1 mm (ukusuka kumphetho ophezulu) | ||
| Edge | |||
| Edge | Chamfer | ||
| Ukupakishwa | |||
| Ukupakishwa | I-Epi ilungele ukupakishwa kwevacuum Ukupakishwa kweekhasethi ezininzi | ||
| *Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD. | |||
