2 ~ 6 intshi 4 ° off-engile P-uhlobo 4H-SiC substrate

Inkcazelo emfutshane:

I-4 ° off-angle P-uhlobo lwe-4H-SiC substrate yimathiriyeli ethile ye-semiconductor, apho "i-4 ° off-angle" ibhekisela kwi-crystal orientation angle ye-wafer ibe yi-4 degrees off-angle, kwaye "uhlobo lwe-P" lubhekisela uhlobo lwe-conductivity ye-semiconductor. Esi sixhobo sinezicelo ezibalulekileyo kwishishini le-semiconductor, ngakumbi kwimimandla yamandla ombane kunye ne-high-frequency electronics.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Semicera's 2~6 intshi 4° off-engile P-uhlobo lwe-4H-SiC substrates zenziwe ngobunjineli ukuhlangabezana neemfuno ezikhulayo zamandla okusebenza okuphezulu kunye nabavelisi bezixhobo zeRF. I-4 ° off-angle orientation iqinisekisa ukukhula okuphuculweyo kwe-epitaxial, okwenza le substrate ibe sisiseko esifanelekileyo soluhlu lwezixhobo ze-semiconductor, ezibandakanya i-MOSFETs, ii-IGBTs, kunye ne-diode.

Le 2 ~ 6 intshi 4 ° off-engile P-uhlobo 4H-SiC substrate ineempawu ezibalaseleyo eziphathekayo, kuquka conductivity eliphezulu thermal, ukusebenza umbane obalaseleyo, kunye nozinzo ebalaseleyo mechanical. I-off-angle orientation inceda ukunciphisa ubuninzi be-micropipe kwaye ikhuthaze i-epitaxial layers, ebaluleke kakhulu ekuphuculeni ukusebenza kunye nokuthembeka kwesixhobo sokugqibela se-semiconductor.

I-Semicera's 2 ~ 6 intshi 4 ° off-angle P-uhlobo lwe-4H-SiC substrates zifumaneka kwiindidi ezahlukeneyo, ukusuka kwi-2 intshi ukuya kwi-6 intshi, ukuhlangabezana neemfuno ezahlukeneyo zokuvelisa. Ii-substrates zethu zenziwe ngobunjineli ngokuchanekileyo ukunika amanqanaba afanayo e-doping kunye neempawu zomgangatho ophezulu womphezulu, ukuqinisekisa ukuba iwafa nganye iyahlangabezana neenkcukacha ezingqongqo ezifunekayo kusetyenziso oluphezulu lwe-elektroniki.

Ukuzibophezela kwe-Semicera kwizinto ezintsha kunye nomgangatho kuqinisekisa ukuba i-2 ~ 6 intshi ye-4 ° off-angle ye-P-uhlobo lwe-4H-SiC substrates ihambisa ukusebenza okuhambelanayo kwizicelo ezininzi ezivela kumandla ombane ukuya kwii-high-frequency devices. Le mveliso ibonelela ngesisombululo esithembekileyo kwisizukulwana esilandelayo se-energy-effective, i-semiconductors ephezulu yokusebenza, ukuxhasa ukuqhubela phambili kwezobuchwepheshe kumashishini afana neemoto, ezonxibelelwano, kunye namandla avuselelekayo.

Imigangatho enxulumene nobungakanani

Ubungakanani	2 intshi	4intshi
Ububanzi	50.8 mm±0.38 mm	100.0 mm+0/-0.5 mm
Ukuqhelaniswa nomphezulu	4 ° ukuya <11-20> ± 0.5 °	4 ° ukuya <11-20> ± 0.5 °
Ubude beFlethi obuPhambili	16.0 mm±1.5mm	32.5mm±2mm
Ubude beFlethi yesibini	8.0 mm±1.5mm	18.0 mm ± 2 mm
Ukuqhelaniswa neFlethi okuPhambili	Parallelto <11-20> ± 5.0 °	Parallelto<11-20>±5.0c
Ukuqhelaniswa neFlethi yesibini	I-90 ° CW ukusuka kwiprayimari ± 5.0 °, isilicon ijonge phezulu	I-90 ° CW ukusuka kwiprayimari ± 5.0 °, isilicon ijonge phezulu
Umphezulu Gqiba	I-C-Face: I-Optical Polish, i-Si-Face: i-CMP	C-Ubuso:OpticalPolish, Si-Face: CMP
Wafer Edge	Beveling	Beveling
Uburhabaxa boMphezulu	Si-Face Ra <0.2 nm	Si-Face Ra <0.2nm
Ukutyeba	350.0±25.0um	350.0±25.0um
Iipolytype	4H	4H
Doping	p-Uhlobo	p-Uhlobo

Imigangatho enxulumene nobungakanani

Ubungakanani	6intshi
Ububanzi	150.0 mm+0/-0.2 mm
Ukuqhelaniswa nomphezulu	4 ° ukuya <11-20> ± 0.5 °
Ubude beFlethi obuPhambili	47.5 mm ± 1.5mm
Ubude beFlethi yesibini	Akukho nanye
Ukuqhelaniswa neFlethi okuPhambili	Ukuhambelana <11-20> ± 5.0 °
Ukuqhelaniswa neFlat yesibini	I-90 ° CW ukusuka kwiprayimari ± 5.0 °, i-silicon ijonge phezulu
Umphezulu Gqiba	Ubuso be-C: I-Optical Polish, iSi-Face: CMP
Wafer Edge	Beveling
Uburhabaxa boMphezulu	Si-Face Ra <0.2 nm
Ukutyeba	350.0±25.0μm
Iipolytype	4H
Doping	p-Uhlobo