Ingalo yokuphatha i-wafersisixhobo esiphambili esisetyenziswa kwinkqubo yokwenziwa kwe-semiconductor ukuphatha, ukudlulisa kunye nokubekaamaqebengwana. Ngokuqhelekileyo iqulethe ingalo yerobhothi, i-gripper kunye nenkqubo yokulawula, kunye nokunyakaza okuchanekileyo kunye nokubeka amandla.I-wafer yokuphatha iingalozisetyenziswa ngokubanzi kumakhonkco ahlukeneyo kwimveliso ye-semiconductor, kubandakanywa amanyathelo enkqubo afana nokulayishwa kwe-wafer, ukucoca, ukufakwa kwefilimu encinci, i-etching, i-lithography kunye nokuhlolwa. Ukuchaneka kwayo, ukuthembeka kunye namandla okuzenzekelayo kubalulekile ukuqinisekisa umgangatho, ukusebenza kakuhle kunye nokuhambelana kwenkqubo yokuvelisa.
Imisebenzi ephambili yengalo yokuphatha i-wafer ibandakanya:
1. Ukudluliselwa kwe-wafer: Ingalo yokuphatha i-wafer iyakwazi ukudlulisa ngokuchanekileyo ama-wafers ukusuka kwindawo enye ukuya kwenye, njengokuthatha ii-wafers ukusuka kwindawo yokugcina kunye nokuyibeka kwisixhobo sokucubungula.
2. Ukuma kunye nokuqhelaniswa: Ingalo yokuphatha i-wafer iyakwazi ukubeka ngokuchanekileyo kwaye ilungelelanise i-wafer ukuqinisekisa ukulungelelaniswa okuchanekileyo kunye nesikhundla sokusebenza okulandelayo okanye ukulinganisa imisebenzi.
3. Ukubamba kunye nokukhulula: Iingalo zokuphatha ii-wafer zihlala zixhotyiswe ngee-grippers ezinokubamba ngokukhuselekileyo ii-wafers kwaye zizikhulule xa zifuneka ukuze kuqinisekiswe ukudluliselwa okukhuselekileyo kunye nokuphathwa kwee-wafers.
4. Ulawulo oluzenzekelayo: Ingalo yokuphatha i-wafer ixhotyiswe ngenkqubo yolawulo oluphezulu olunokuthi luqhube ngokuzenzekelayo ulandelelwano lwezenzo ezichazwe kwangaphambili, ukuphucula ukusebenza kwemveliso kunye nokunciphisa iimpazamo zabantu.
Iimpawu kunye neenzuzo
I-1.Imilinganiselo echanekileyo kunye nokuzinza kwe-thermal.
I-2.Ukuqina okucacileyo okuphezulu kunye nokufana kwe-thermal, ukusetyenziswa kwexesha elide akulula ukugoba i-deformation.
I-3.Inomgangatho ogudileyo kunye nokumelana nokunxiba kakuhle, ngaloo ndlela iphatha ngokukhuselekileyo i-chip ngaphandle kokungcoliswa kwamasuntswana.
I-4.Silicon carbide resistivity kwi-106-108Ω, i-non-magnetic, ngokuhambelana neemfuno zokuchasana ne-ESD; Inokuthintela ukuqokelelwa kombane ongatshintshiyo kumphezulu wetshiphu.
5.Good conductivity thermal, i-coefficient yokwandisa okuphantsi.
