IiSemicera'sIkhasethi yeWaferlicandelo elibalulekileyo kwinkqubo yokwenziwa kwe-semiconductor, eyilelwe ukubamba ngokukhuselekileyo kunye nokuthutha iiwafa ezithambileyo zesemiconductor. IIkhasethi yeWaferinikeza ukhuseleko olukhethekileyo, ukuqinisekisa ukuba i-wafer nganye igcinwa ikhululekile kwizinto ezingcolileyo kunye nomonakalo womzimba ngexesha lokuphatha, ukugcinwa kunye nokuthutha.
Yakhiwe ngobunyulu obuphezulu, izixhobo ezichasene neekhemikhali, iSemiceraIkhasethi yeWaferiqinisekisa awona manqanaba aphezulu okucoceka kunye nokuqina, okuyimfuneko ekugcineni imfezeko yeewafa kwinqanaba ngalinye lemveliso. Ubunjineli obuchanekileyo bale khasethi buvumela ukuhlanganiswa okungenamthungo kunye neenkqubo zokuphatha ngokuzenzekelayo, ukunciphisa umngcipheko wokungcola kunye nomonakalo womatshini.
Uyilo lweIkhasethi yeWaferikwaxhasa ukuhamba komoya okona kulungileyo kunye nolawulo lobushushu, olubalulekileyo kwiinkqubo ezifuna iimeko ezithile zokusingqongileyo. Ingaba isetyenziswe kumagumbi acocekileyo okanye ngexesha lokulungiswa kwe-thermal, i-SemiceraIkhasethi yeWaferyenzelwe ukuhlangabezana neemfuno ezingqongqo zeshishini le-semiconductor, ibonelela ngokusebenza okuthembekileyo nokungaguquguqukiyo ukunyusa ukusebenza kakuhle kwemveliso kunye nomgangatho wemveliso.
| Izinto | Imveliso | Uphando | Dummy |
| Iiparamitha zeCrystal | |||
| Iipolytype | 4H | ||
| Imposiso yokujonga umphezulu | <11-20>4±0.15° | ||
| Iiparamitha zoMbane | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukuxhathisa | 0.015-0.025ohm · cm | ||
| IiParameters zoomatshini | |||
| Ububanzi | 150.0±0.2mm | ||
| Ukutyeba | 350±25 μm | ||
| Ukuqhelaniswa neflethi ephambili | [1-100] ± 5 ° | ||
| Ubude beflethi bokuqala | 47.5±1.5mm | ||
| Iflethi yesibini | Akukho nanye | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Ukuqubuda | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Ngaphambili(Si-face) uburhabaxa(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Ulwakhiwo | |||
| Ukuxinana kweMibhobho | <1 iya/cm2 | <10 i/cm2 | <15 i/cm2 |
| Ukungcola kwesinyithi | ≤5E10athom/cm2 | NA | |
| I-BPD | ≤1500 i-ea/cm2 | ≤3000 i/cm2 | NA |
| TSD | ≤500 i/cm2 | ≤1000 nge-cm2 | NA |
| Umgangatho wangaphambili | |||
| Ngaphambili | Si | ||
| Ukugqitywa komphezulu | Si-ubuso CMP | ||
| Amacandelo | ≤60ea/wafer (ubukhulu≥0.3μm) | NA | |
| Imikrwelo | ≤5ea/mm. Ubude obongezelekayo ≤Ububanzi | Ubude obongezelekayo≤2*Ububanzi | NA |
| Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko | Akukho nanye | NA | |
| Iitshiphusi ze-Edge/i-idents/fracture/hex plates | Akukho nanye | ||
| Iindawo zePolytype | Akukho nanye | Indawo eyongezelekayo≤20% | Indawo eyongezelekayo≤30% |
| Ukumakishwa kwelaser yangaphambili | Akukho nanye | ||
| Umgangatho wasemva | |||
| Emva kokugqiba | C-ubuso CMP | ||
| Imikrwelo | ≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi | NA | |
| Iziphene zangasemva (iitshiphusi zomphetho/iindindi) | Akukho nanye | ||
| Umqolo uburhabaxa | Ra≤0.2nm (5μm*5μm) | ||
| Ukumakishwa kwelaser yangasemva | 1 mm (ukusuka kumphetho ophezulu) | ||
| Edge | |||
| Edge | Chamfer | ||
| Ukupakishwa | |||
| Ukupakishwa | I-Epi ilungele ukupakishwa kwevacuum Ukupakishwa kweekhasethi ezininzi | ||
| *Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD. | |||
