I-Semicera ibonisa eyona mveliso iphambiliAbathwali beWafer, yenzelwe ukubonelela ngokhuseleko oluphezulu kunye nothutho olungenamthungo lweewafers ezithambileyo ze-semiconductor kwizigaba ezahlukeneyo zenkqubo yokwenziwa. YethuAbathwali beWaferziyilwe ngobuchule ukuhlangabezana neemfuno ezingqongqo zokwenziwa kwe-semiconductor yale mihla, iqinisekisa ingqibelelo kunye nomgangatho weewafers zakho zigcinwa ngalo lonke ixesha.
Ezona mpawu:
• Ulwakhiwo lweMathiriyeli yePrimiyamu:Iyilwe kumgangatho ophezulu, izixhobo ezikwaziyo ukumelana nongcoliseko eziqinisekisa ukuhlala ixesha elide kunye nokuphila ixesha elide, zizenza zilungele indawo ecocekileyo yegumbi.
•Uyilo oluchanekileyo:Ibonisa ulungelelwaniso oluchanekileyo lwe-slot kunye neendlela ezikhuselekileyo zokubamba ukukhusela i-wafer slippage kunye nomonakalo ngexesha lokuphatha kunye nokuthutha.
•Ukuhambelana kwezinto ezininzi:Ithatha uluhlu olubanzi lweesayizi ze-wafer kunye nobukhulu, inikezela ukuguquguquka kwezicelo ezahlukeneyo ze-semiconductor.
•Ukuphathwa kwe-Ergonomic:Uyilo oluKhaphukhaphu kunye nolusebenziseka lula luququzelela ukulayishwa kunye nokukhulula lula, ukuphucula ukusebenza kakuhle kunye nokunciphisa ixesha lokuphatha.
•Ukhetho oluLungiselelayo:Inikezela ngokwenziwa ngokwezifiso ukuhlangabezana neemfuno ezithile, kubandakanya ukhetho lwemathiriyeli, uhlengahlengiso lobungakanani, kunye nokuleyibheli ukuze ulungelelanise ukuhamba komsebenzi.
Yandisa inkqubo yakho yokwenza isemiconductor ngeSemicera'sAbathwali beWafer, esona sisombululo sigqibeleleyo sokukhusela iiwafa zakho ekungcolisekeni kunye nomonakalo owenziwe ngumatshini. Ukuthembela ekuzibopheleleni kwethu kumgangatho kunye nokusungula izinto ezintsha ukuhambisa iimveliso ezingahlangani kuphela kodwa ezingaphezulu kwemigangatho yoshishino, siqinisekisa ukuba imisebenzi yakho iqhuba kakuhle nangempumelelo.
| Izinto | Imveliso | Uphando | Dummy |
| Iiparamitha zeCrystal | |||
| Iipolytype | 4H | ||
| Imposiso yokuma kumphezulu | <11-20>4±0.15° | ||
| Iiparamitha zoMbane | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukuxhathisa | 0.015-0.025ohm · cm | ||
| IiParameters zoomatshini | |||
| Ububanzi | 150.0±0.2mm | ||
| Ukutyeba | 350±25 μm | ||
| Ukuqhelaniswa neflethi ephambili | [1-100] ± 5 ° | ||
| Ubude beflethi bokuqala | 47.5±1.5mm | ||
| Iflethi yesibini | Akukho nanye | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Ukuqubuda | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Ngaphambili(Si-face) uburhabaxa(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Ulwakhiwo | |||
| Ukuxinana kweMibhobho | <1 iya/cm2 | <10 i/cm2 | <15 i/cm2 |
| Ukungcola kwesinyithi | ≤5E10athom/cm2 | NA | |
| I-BPD | ≤1500 i-ea/cm2 | ≤3000 i/cm2 | NA |
| TSD | ≤500 i/cm2 | ≤1000 nge-cm2 | NA |
| Umgangatho wangaphambili | |||
| Ngaphambili | Si | ||
| Ukugqitywa komphezulu | Si-ubuso CMP | ||
| Amacandelo | ≤60ea/wafer (ubukhulu≥0.3μm) | NA | |
| Imikrwelo | ≤5ea/mm. Ubude obongezelekayo ≤Ububanzi | Ubude obongezelekayo≤2*Ububanzi | NA |
| Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko | Akukho nanye | NA | |
| Iitshiphusi ze-Edge/i-idents/fracture/hex plates | Akukho nanye | ||
| Iindawo zePolytype | Akukho nanye | Indawo eyongezelekayo≤20% | Indawo eyongezelekayo≤30% |
| Ukumakishwa kwelaser yangaphambili | Akukho nanye | ||
| Umgangatho wasemva | |||
| Emva kokugqiba | C-ubuso CMP | ||
| Imikrwelo | ≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi | NA | |
| Iziphene zangasemva (iitshiphusi zomphetho/iindents) | Akukho nanye | ||
| Umqolo uburhabaxa | Ra≤0.2nm (5μm*5μm) | ||
| Ukumakishwa kwelaser yangasemva | 1 mm (ukusuka kumphetho ophezulu) | ||
| Edge | |||
| Edge | Chamfer | ||
| Ukupakishwa | |||
| Ukupakishwa | I-Epi ilungele ukupakishwa kwevacuum Ukupakishwa kweekhasethi ezininzi | ||
| *Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD. | |||
