Isikhephe esisicaba

Isikhephe esisiqhaga esivezwayo Umfanekiso

Inkcazelo emfutshane:

Izikhephe ze-wafer zizinto eziphambili kwinkqubo yokwenziwa kwe-semiconductor. I-Semiera iyakwazi ukubonelela ngezikhephe ezisicaba eziyilwe ngokukodwa kwaye ziveliswe iinkqubo zokusasaza, ezidlala indima ebalulekileyo ekwenziweni kweesekethe eziphezulu ezidityanisiweyo. Sizibophelele ngokuqinileyo ekuboneleleni ngezona mveliso zisemgangathweni ophezulu ngamaxabiso akhuphisanayo kwaye sijonge phambili ekubeni liqabane lakho lexesha elide eTshayina.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iingenelo

Ukumelana ne-oxidation yobushushu obuphezulu
Uxhathiso olugqwesileyo lweCorrosion
Ukuxhathisa okulungileyo kweAbrasion
I-coefficient ephezulu yokushisa ukushisa
Ukuzithambisa, ukuxinana okuphantsi
Ukuqina okuphezulu
Uyilo olulungiselelweyo.

Usetyenziso

-Indawo ekwaziyo ukumelana nokunxiba: ibhulorho, ipleyiti, umbhobho wesanti, umgca wenkanyamba, umphanda wokusila, njl.
-Umgangatho wobushushu obuphezulu: i-siC Slab, iTube yokuCima iFurnace, iTube eRadiant, i-crucible, i-Heating Element, i-Roller, i-Beam, i-Heat Exchanger, i-Cold Air Pipe, i-Burner Nozzle, i-Thermocouple Protection Tube, isikhephe se-SiC, i-Kiln car Structure, i-Setter, njl.
-I-Silicon Carbide Semiconductor: Isikhephe se-SiC wafer, i-sic chuck, i-sic paddle, i-sic cassette, i-sic diffusion ityhubhu, i-wafer fork, ipleyiti yokufunxa, isikhokelo, njl.
-I-Silicon Carbide Seal Field: zonke iintlobo zeringi yokutywina, ukuthwala, i-bushing, njl.
-I-Photovoltaic Field: I-Cantilever Paddle, i-Barrel yokugaya, i-Silicon Carbide Roller, njl.
-Indawo yebhetri yeLithium

I-WAFER (1)

I-WAFER (2)

IiPropati zoBume beSiC

Ipropati	Ixabiso	Indlela
Ukuxinana	3.21 g/cc	I-Sink-float kunye ne-dimension
Ubushushu obuthile	0.66 J/g °K	Isibane se-laser pulsed
Amandla e-Flexural	450 MPa560 MPa	I-4 point bend, i-RT4 point bend, i-1300 °
Ukuqina kokwaphuka	2.94 MPa m1/2	I-Microindentation
Ukuqina	2800	Vicker, 500g umthwalo
Elastic ModulusOlutsha's Modulus	450 GPA430 GPA	4 pt ukugoba, RT4 pt ukugoba, 1300 °C
Ubungakanani beenkozo	2 – 10 µm	I-SEM

Iipropati zoThermal zeSiC

I-Thermal Conductivity	250 W/m °K	Indlela yeLaser flash, RT
Ukwandiswa kweThermal (CTE)	4.5 x 10-6 °K	Ubushushu begumbi ukuya kuma-950 °C, i-silica dilatometer

IiParameters zobuGcisa

Into	Iyunithi	Idatha
Into	Iyunithi	I-RBSiC(SiSiC)	NBSiC	I-SSiC	RSiC	OSiC
Umxholo weSiC	%	85	75	99	99.9	≥99
Umxholo wesilicon wasimahla	%	15	0	0	0	0
Ubushushu benkonzo enkulu	℃	1380	1450	1650	1620	1400
Ukuxinana	g/cm³	3.02	2.75-2.85	3.08-3.16	2.65-2,75	2.75-2.85
I-porosity evulekile	%	0	13-15	0	15-18	7-8
Amandla okugoba 20℃	Mpa	250	160	380	100	/
Amandla okugoba 1200℃	Mpa	280	180	400	120	/
Imodyuli ye-elasticity 20℃	Gpa	330	580	420	240	/
Imodyuli ye-elasticity 1200℃	Gpa	300	/	/	200	/
Thermal conductivity 1200℃	W/mK	45	19.6	100-120	36.6	/
I-Coefficient yokwandiswa kwe-thermal	K^-1X10^-6	4.5	4.7	4.1	4.69	/
HV	Kg/m^m2	2115	/	2800	/	/

I-CVD ye-silicon carbide yokwambathisa kumphezulu wangaphandle we-silicon carbide iimveliso ze-ceramic ezinokufikelela kubunyulu obungaphezulu kwe-99.9999% ukuhlangabezana neemfuno zabathengi kwishishini le-semiconductor.