China abavelisi wafer, ababoneleli, Factory
Yintoni iwafer yesemiconductor?
I-wafer ye-semiconductor yinto encinci, engqukuva yesixhobo se-semiconductor esebenza njengesiseko sokwenziwa kweesekethe ezidibeneyo (ICs) kunye nezinye izixhobo zombane. I-wafer ibonelela ngomphezulu osicaba kunye nofanayo apho kwakhiwe khona izinto ezahlukeneyo ze-elektroniki.
Inkqubo yokwenziwa kwe-wafer ibandakanya amanyathelo aliqela, kubandakanya ukukhula kwekristale enye enkulu yemathiriyeli ye-semiconductor efunwayo, ukusika ikristale ibe ngamacangci amancinci kusetyenziswa isarha yedayimane, emva koko ukupolishwa kunye nokucoca iiwafa ukususa naziphi na iziphene okanye ukungcola okungaphezulu. Ii-wafers ezibangelwayo zinomphezulu othe tyaba kwaye ogudileyo, obaluleke kakhulu kwiinkqubo zokuyila ezilandelayo.
Nje ukuba ii-wafers zilungisiwe, zingena kuthotho lweenkqubo zokwenziwa kwe-semiconductor, ezinje ngefotografi, i-etching, i-deposition, kunye ne-doping, ukwenza iipateni ezintsonkothileyo kunye neeleya ezifunekayo ukwakha izinto ze-elektroniki. Ezi nkqubo ziphindwe kaninzi kwi-wafer enye ukudala iisekethe ezininzi ezidibeneyo okanye ezinye izixhobo.
Emva kokuba inkqubo yokwenziwa igqityiwe, iitshiphusi zomntu ngamnye ziyahlulwa ngokucofa isiqwenga se-wafer kwimigca echazwe kwangaphambili. Iitshiphusi ezahluliweyo ke zipakishwe ukuze zikhuseleke kwaye zibonelele ngoqhagamshelo lombane ukuze kudityaniswe nezixhobo zombane.
Izinto ezahlukeneyo kwi-wafer
Ii-wafers ze-semiconductor zenziwe ngokuyintloko kwi-silicon ye-crystal enye ngenxa yobuninzi bayo, iipropathi ezigqwesileyo zombane, kunye nokuhambelana neenkqubo zokwenziwa kwe-semiconductor eziqhelekileyo. Nangona kunjalo, kuxhomekeke kwizicelo ezithile kunye neemfuno, ezinye izinto zingasetyenziselwa ukwenza iiwafers. Nantsi eminye imizekelo:
I-Silicon carbide (i-SiC) yimpahla ebanzi ye-semiconductor ye-bandgap enika iimpawu eziphezulu zomzimba xa kuthelekiswa nezinto zemveli. Inceda ukunciphisa ubungakanani kunye nobunzima bezixhobo ezicacileyo, iimodyuli, kunye neenkqubo ezipheleleyo, ngelixa uphucula ukusebenza kakuhle.
Iimpawu eziphambili zeSiC:
- -Ibhendi ebanzi:I-SiC's bandgap imalunga nokuphinda-phindwe kathathu kwesilicon, eyivumela ukuba isebenze kumaqondo obushushu aphezulu, ukuya kuthi ga kwi-400°C.
- -INdawo ePhakamileyo yokuCalula:I-SiC inokumelana namaxesha alishumi kwintsimi yombane yesilicon, iyenza ilungele izixhobo zombane ophezulu.
- -I-High Thermal Conductivity:I-SiC ikhupha ngokufanelekileyo ukushisa, inceda izixhobo zigcine amaqondo okushisa asebenzayo kunye nokwandisa ubomi babo.
- -Isantya esiphezulu se-Electron Drift:Ngokuphindwe kabini isantya sokukhukuliseka kwesilicon, iSiC inika amandla amaza okutshintsha okuphezulu, inceda kwisixhobo esincinci.
Usetyenziso:
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-Amandla oMbane:Izixhobo zamandla ze-SiC zigqwesa kwi-high-voltage, i-high-current, i-high-temperature, kunye ne-high-frequency environments, ukuphucula ngokubonakalayo ukuguqulwa kwamandla. Zisetyenziswa ngokubanzi kwizithuthi zombane, izikhululo zokutshaja, iinkqubo ze-photovoltaic, uthutho lukaloliwe, kunye neegridi ezihlakaniphile.
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-Unxibelelwano lweMicrowave:Izixhobo ze-SiC-based GaN RF zibalulekile kwiziseko zonxibelelwano ezingenazingcingo, ngakumbi kwizikhululo ezisisiseko ze-5G. Ezi zixhobo zidibanisa i-SiC ye-thermal conductivity egqwesileyo kunye ne-high-frequency ye-GaN, i-high-power-high output ye-RF, ezenza zibe lolona khetho lukhethwayo kwisizukulwana esilandelayo sothungelwano lomnxeba ophezulu.
IGallium nitride (GaN)sisizukulwana sesithathu esibanzi se-bandgap semiconductor imathiriyeli ene-bandgap enkulu, i-thermal conductivity ephezulu, isantya esiphezulu se-electron saturation drift, kunye neempawu ezigqwesileyo zentsimi. Izixhobo ze-GaN zinethuba elibanzi lokusebenzisa i-high-frequency, i-high-speed, kunye neendawo eziphezulu zamandla ezifana nezibane zokulondoloza amandla e-LED, i-laser projection displays, izithuthi zombane, i-smart grids, kunye nonxibelelwano lwe-5G.
I-Gallium arsenide (GaAs)sisimathiriyeli semiconductor eyaziwa ngokuba ngamaza aphezulu, ukuhamba kwe-electron ephezulu, ukuphuma kwamandla aphezulu, ingxolo ephantsi, kunye nomgca olungileyo. Isetyenziswa ngokubanzi kumashishini e-optoelectronics kunye ne-microelectronics. Kwi-optoelectronics, ii-substrates ze-GaAs zisetyenziselwa ukuvelisa i-LED (i-light-emitting diodes), i-LD (i-laser diodes), kunye nezixhobo ze-photovoltaic. Kwi-microelectronics, baqeshwe kwimveliso ye-MESFETs (i-metal-semiconductor field-effect transistors), i-HEMTs (i-high electron mobility transistors), i-HBTs (i-heterojunction bipolar transistors), ii-ICs (iisekethe ezidibeneyo), i-microwave diodes, kunye nezixhobo ze-Hall effect.
I-Indidium phosfide (InP)yenye ye-semiconductors eyi-III-V ebalulekileyo, eyaziwa ngokuhamba kwayo kwe-electron ephezulu, ukuxhathisa okugqwesileyo kwi-radiation, kunye ne-bandgap ebanzi. Isetyenziswa ngokubanzi kumashishini e-optoelectronics kunye ne-microelectronics.
