I-Semicera ibonelela ngeengubo ezikhethekileyo ze-tantalum carbide (TaC) kumacandelo ahlukeneyo kunye nabathwali.Inkqubo ehamba phambili yokugqoka i-Semicera yenza iingubo ze-tantalum carbide (TaC) zifezekise ukucoceka okuphezulu, ukuzinza kweqondo lokushisa eliphezulu kunye nokunyamezela kweekhemikhali eziphezulu, ukuphucula umgangatho wemveliso ye-crystals ye-SIC / GAN kunye neengqimba ze-EPI (Isixhasi seTaC esigqunywe ngegraphite), kunye nokwandisa ubomi bamacandelo angundoqo we-reactor. Ukusetyenziswa kwetantalum carbide TaC coating kukusombulula ingxaki edge kunye nokuphucula umgangatho wokukhula kwekristale, kwaye iSemicera iye yasombulula itekhnoloji ye-tantalum carbide coating (CVD), ifikelele kwinqanaba eliphezulu lamazwe ngamazwe.
Emva kweminyaka yophuhliso, iSemicera yoyisile iteknoloji yeCVD TaCngeenzame ezidibeneyo zesebe leR&D. Iziphene kulula ukwenzeka kwinkqubo yokukhula kwee-wafers ze-SiC, kodwa emva kokusetyenziswaI-TaC, umahluko ubalulekile. Apha ngezantsi luthelekiso lweewafers ezine-TaC nangaphandle kwayo, kunye neendawo zeSemicera zokukhula kwekristale enye.
kunye nangaphandle kwe-TaC
Emva kokusebenzisa i-TaC (ekunene)
Ukongeza, ubomi benkonzo yeemveliso zokugquma ze-TaC zeSemicera bude kwaye buxhathisa ngakumbi kubushushu obuphezulu kunobo bokwaleka kwe-SiC. Emva kwexesha elide ledatha yomlinganiselo waselabhoratri, i-TaC yethu ingasebenza ixesha elide kubuninzi obungama-2300 degrees celcius. Ezi zilandelayo zezinye zeesampulu zethu:
(a) Idayagram ecwangcisiweyo yesixhobo sokukhulisa i-SiC enye crystal ingot ngendlela ye-PVT (b) Isibiyeli sembewu egqunywe yi-TaC ePhezulu (kubandakanywa nembewu ye-SiC) (c) iringi ye-TAC egqunywe ngegraphite
