I-TaC Coated Plate yicwecwe elikhethekileyo elilungiselelwe ukusetyenziswa kwiinkqubo ze-SiC epitaxial, ezenziwe ngokuchanekileyo ukusuka kwimathiriyeli yegraphite ekumgangatho ophezulu. Umphezulu wayo uqatywe ngobunono ngetantalum carbide (TaC), ikhompawundi eyaziwa ngobunyulu namandla ayo akhethekileyo. Ukwaleka kwe-TaC kwandisa ukuqina kwepleyiti kunye nokuxhathisa amaqondo obushushu aphezulu, iyenza ilungele iimeko ezibangwayo zeenkqubo ze-SiC epitaxial.
Le TaC Coated Plate yenza into entsha yidiski ekhethekileyo eyenzelwe ukusetyenziswa kwiinkqubo ze-SiC epitaxial, yenziwe ngokuchanekileyo ukusuka kwimathiriyeli yegraphite ekumgangatho ophezulu. Umphezulu we-TaC Coated Plate uqatywe ngobunono nge-tantalum carbide (TaC), ikhompawundi eyaziwa ngobunyulu namandla ayo akhethekileyo. isebenza njengeqonga elithembekileyo lokuthwala ii-wafers ngexesha lezigaba ezahlukeneyo zokukhula kwe-SiC epitaxial. Isiseko sayo segraphite esisulungekileyo sibonelela ngomphezulu ozinzile kunye ne-inert, ngelixa i-TaC yokwambathisa yongeza umaleko owongezelelweyo wokhuseleko ngokuchasene neekhemikhali kunye nokuguga.
SemicixeshaI-TaC Coated Plate yenziwe ngokweemfuno ezithile zabathengi, iqinisekisa ukusebenza ngokugqibeleleyo kunye nokuhambelana neenkqubo zabo ze-SiC epitaxial. Nokuba bubukhulu, imilo, okanye ezinye iinkcukacha, ezi pleyiti zilungiselelwe ukuhlangabezana neemfuno ezizodwa zesicelo ngasinye.
kunye nangaphandle kwe-TaC
Emva kokusebenzisa i-TaC (ekunene)
Ngaphezu koko, iSemicera'sIimveliso ezigqunywe yi-TaCbonisa ubomi benkonzo obude kunye nokumelana nobushushu obuphezulu xa kuthelekiswaIingubo zeSiC.Imilinganiselo yeLabhoratri ibonise ukuba yethuIingubo ze-TaCiyakwazi ukusebenza rhoqo kumaqondo obushushu ukuya kuma 2300 degrees Celsius ixesha elide. Ngezantsi yimizekelo yeesampulu zethu:
