I-TaC Coted MOCVD Graphite Susceptor

Inkcazelo emfutshane:

I-TaC Coated MOCVD Graphite Susceptor yi-Semicera yenzelwe ukuqina okuphezulu kunye nokumelana nobushushu obuphezulu, iyenza igqibelele kwizicelo ze-epitaxy ze-MOCVD. Le susceptor iphucula ukusebenza kakuhle kunye nomgangatho kwi-Deep UV ye-LED yemveliso. Yenziwe ngokuchanekileyo, iSemicera iqinisekisa ukusebenza okuphezulu kunye nokuthembeka kuyo yonke imveliso.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

TaC ukutyabekayinto ebalulekileyo yokugquma impahla, edla ngokulungiswa kwisiseko segraphite nge-metal organic chemical vapor deposition (MOCVD) technology. Olu tyaba luneempawu ezibalaseleyo, ezinjengokuqina okuphezulu, ukumelana nokunxiba okugqwesileyo, ukumelana nobushushu obuphezulu kunye nokuzinza kweekhemikhali, kwaye ifanelekile kwizicelo zobunjineli ezifunwa kakhulu.

Itekhnoloji ye-MOCVD yitekhnoloji eqhele ukusetyenziswa kwifilimu ebhityileyo egcina ifilim efunwayo kumphezulu we-substrate ngokusabela i-metal organic precursors ngeegesi ezisebenzayo kumaqondo obushushu aphezulu. Xa ulungiselelaTaC ukutyabeka, ukukhetha i-metal organic precursors efanelekileyo kunye nemithombo yekhabhoni, ukulawula iimeko zokusabela kunye neeparitha zokubeka, ifilimu ye-TaC efanayo kunye nexineneyo ingafakwa kwisiseko segraphite.

I-Semicera ibonelela ngeengubo ezikhethekileyo ze-tantalum carbide (TaC) kumacandelo ahlukeneyo kunye nabathwali.Inkqubo ehamba phambili yokugqoka i-Semicera yenza iingubo ze-tantalum carbide (TaC) zifezekise ukucoceka okuphezulu, ukuzinza kweqondo lokushisa eliphezulu kunye nokunyamezela kweekhemikhali eziphezulu, ukuphucula umgangatho wemveliso ye-crystals ye-SIC / GAN kunye neengqimba ze-EPI (Isixhasi seTaC esigqunywe ngegraphite), kunye nokwandisa ubomi bamacandelo angundoqo we-reactor. Ukusetyenziswa kwetantalum carbide TaC coating kukusombulula ingxaki edge kunye nokuphucula umgangatho wokukhula kwekristale, kwaye iSemicera iye yasombulula itekhnoloji ye-tantalum carbide coating (CVD), ifikelele kwinqanaba eliphezulu lamazwe ngamazwe.

Emva kweminyaka yophuhliso, iSemicera yoyisile iteknoloji yeCVD TaCngeenzame ezidibeneyo zesebe leR&D. Iziphene kulula ukwenzeka kwinkqubo yokukhula kwee-wafers ze-SiC, kodwa emva kokusetyenziswaI-TaC, umahluko ubalulekile. Apha ngezantsi luthelekiso lweewafers ezine-TaC nangaphandle kwayo, kunye neendawo zeSimicera zokukhula kwekristale enye.

Ukusebenza okuphezulu kwetantalum carbide coating_ kuphucula ukusebenza kakuhle kwemveliso yemizi-mveliso kunye nokunciphisa iindleko zokugcinwa komfanekiso obonakalayo

Inxalenye ye-Tac yokukhula kwekristale enye

I-Antiwear tantalum carbide coating_ Ikhusela izixhobo ekunxibeni nasekudlekeni Umfanekiso okhoyo

Igraphite eneringi egqunywe yi-TaC

kunye nangaphandle kwe-TaC

Emva kokusebenzisa i-TaC (ekunene)

Ngaphezu koko, iSemicera'sIimveliso ezigqunywe yi-TaCbonisa ubomi benkonzo obude kunye nokumelana nobushushu obuphezulu xa kuthelekiswaIingubo zeSiC.Imilinganiselo yeLabhoratri ibonise ukuba yethuIingubo ze-TaCiyakwazi ukusebenza rhoqo kumaqondo obushushu ukuya kuma 2300 degrees Celsius ixesha elide. Ngezantsi yimizekelo yeesampulu zethu: