I-CVD TaC Coating

Intshayelelo kwi-CVD TaC Coating:

I-CVD TaC Coating bubugcisa obusebenzisa i-chemical vapor deposition ukufaka i-tantalum carbide (TaC) umaleko kumphezulu wesubstrate. I-Tantalum carbide yimathiriyeli ye-ceramic esebenza kakhulu eneempawu ezibalaseleyo zoomatshini kunye neekhemikhali. Inkqubo ye-CVD yenza ifilimu ye-TaC efanayo kumphezulu we-substrate ngokusabela kwegesi.

Iimpawu eziphambili:

Ubulukhuni obugqwesileyo kunye nokumelana nokunxiba: I-Tantalum carbide inobunzima obuphezulu kakhulu, kwaye i-CVD TaC Coating inokuphucula kakhulu ukuxhathisa ukunxiba kwe-substrate. Oku kwenza i-coating ifaneleke kwizicelo kwiindawo eziphezulu zokunxiba, ezifana nezixhobo zokusika kunye nokubumba.

Uzinzo lobushushu obuphezulu: Iingubo ze-TaC zikhusela isithando somlilo esibalulekileyo kunye namalungu e-reactor kumaqondo obushushu ukuya kuma-2200 ° C, ebonisa ukuzinza okulungileyo. Igcina ukuzinza kweekhemikhali kunye nomatshini phantsi kweemeko ezinzulu zokushisa, okwenza kube yinto efanelekileyo yokulungiswa kobushushu obuphezulu kunye nokusetyenziswa kwiindawo eziphezulu zokushisa.

Ukuzinza kweekhemikhali okugqwesileyo: I-Tantalum carbide inokumelana ne-corrosion eqinile kwii-acids ezininzi kunye ne-alkali, kunye ne-CVD TaC Coating inokuthintela ngokufanelekileyo umonakalo kwi-substrate kwiindawo ezinobungozi.

Indawo yokunyibilika ephezulu: I-Tantalum carbide inendawo ephezulu yokunyibilika (malunga ne-3880 ° C), evumela i-CVD TaC Coating ukuba isetyenziswe kwiimeko ezigqithisileyo zokushisa ngaphandle kokunyibilika okanye ukuthotywa.

Ukuqhuba kakuhle kwe-thermal: I-TaC yokugqoka ine-conductivity ephezulu ye-thermal, enceda ukutshabalalisa ngokufanelekileyo ubushushu kwiinkqubo eziphezulu zokushisa kunye nokukhusela ukushisa kwendawo.

Usetyenziso olunokwenzeka:

• I-Gallium Nitride (GaN) kunye ne-Silicon Carbide epitaxial CVD reactor components kuquka izithwali zewafer, izitya zesathelayithi, iishawara, iisilingi, kunye neesusceptors.

• I-Silicon carbide, i-gallium nitride kunye ne-aluminiyam nitride (i-AlN) iikhomponenti zokukhula kwekristale eziquka iicrucibles, izibambi zembewu, iiringi zesikhokelo kunye nezihluzo

• Amacandelo emizi-mveliso aquka izinto zokufudumeza, imilomo yokutofa, iiringi zokugquma kunye neejigi zokubrawuza

Iimpawu zesicelo:

• Iqondo lobushushu lizinzile ngaphezu kwe-2000°C, livumela ukusebenza kumaqondo obushushu agqithisileyo
•Ukumelana ne-hydrogen (Hz), i-ammonia (NH3), i-monosilane (i-SiH4) kunye ne-silicon (Si), inika ukhuseleko kwiindawo ezinobungozi beekhemikhali
• Ukumelana nokothuka kwe-thermal kwenza imijikelo yokusebenza ngokukhawuleza
• Igraphite inoncamathelo olomeleleyo, iqinisekisa ubomi obude benkonzo kwaye akukho delamination yokwaleka.
• Ukucoceka okuphezulu kakhulu ukuphelisa ukungcola okungeyomfuneko okanye ukungcola
• Ukugqunywa ngokusesikweni kokwaleka ukunyamezelwa komgangatho

Iinkcukacha zobugcisa:

Ukulungiswa kweengubo ezixineneyo ze-tantalum carbide ngeCVD:

Ukugquma kwe-TAC ngokukhanya okuphezulu kunye nokufana okugqwesileyo:

I-CVD TAC COATING I-Technical Parameters_Semicera:

Oku kungasentla ngamaxabiso aqhelekileyo.