I-TaC Coated Graphite Izahlulo eziThathu zezangqa

Inkcazelo emfutshane:

I-Silicon carbide (i-SiC) yinto ephambili kwisizukulwana sesithathu se-semiconductors, kodwa izinga layo lokuvuna liye laba yinto ekhawulelayo ekukhuleni kweshishini. Emva kovavanyo olubanzi kwiilabhoratri zeSemicera, kufunyaniswe ukuba i-TaC etshiziweyo kunye ne-sintered ayinabo ubunyulu obuyimfuneko kunye nokufana. Ngokwahlukileyo, inkqubo ye-CVD iqinisekisa inqanaba lokucoceka kwe-5 PPM kunye nokufana okuhle kakhulu. Ukusetyenziswa kwe-CVD TaC kuphucula ngokuphawulekayo izinga lesivuno se-silicon carbide wafers. Siyazamkela iingxoxoI-TaC Coated Graphite Izahlulo eziThathu zezangqa ukunciphisa ngakumbi iindleko ze-SiC wafers.

 


Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Semicera ibonelela ngeengubo ezikhethekileyo ze-tantalum carbide (TaC) kumacandelo ahlukeneyo kunye nabathwali.Inkqubo ehamba phambili yokugqoka i-Semicera yenza iingubo ze-tantalum carbide (TaC) zifezekise ukucoceka okuphezulu, ukuzinza kweqondo lokushisa eliphezulu kunye nokunyamezela kweekhemikhali eziphezulu, ukuphucula umgangatho wemveliso ye-crystals ye-SIC / GAN kunye neengqimba ze-EPI (Isixhasi seTaC esigqunywe ngegraphite), kunye nokwandisa ubomi bamacandelo angundoqo we-reactor. Ukusetyenziswa kwetantalum carbide TaC coating kukusombulula ingxaki edge kunye nokuphucula umgangatho wokukhula kwekristale, kwaye iSemicera iye yasombulula itekhnoloji ye-tantalum carbide coating (CVD), ifikelele kwinqanaba eliphezulu lamazwe ngamazwe.

 

I-Silicon carbide (i-SiC) yinto ephambili kwisizukulwana sesithathu se-semiconductors, kodwa izinga layo lokuvuna liye laba yinto ekhawulelayo ekukhuleni kweshishini. Emva kovavanyo olubanzi kwiilabhoratri zeSemicera, kufunyaniswe ukuba i-TaC etshiziweyo kunye ne-sintered ayinabo ubunyulu obuyimfuneko kunye nokufana. Ngokwahlukileyo, inkqubo ye-CVD iqinisekisa inqanaba lokucoceka kwe-5 PPM kunye nokufana okuhle kakhulu. Ukusetyenziswa kwe-CVD TaC kuphucula ngokuphawulekayo izinga lesivuno se-silicon carbide wafers. Siyazamkela iingxoxoI-TaC Coated Graphite Izahlulo eziThathu zezangqa ukunciphisa ngakumbi iindleko ze-SiC wafers.

Emva kweminyaka yophuhliso, iSemicera yoyisile iteknoloji yeCVD TaCngeenzame ezidibeneyo zesebe leR&D. Iziphene kulula ukwenzeka kwinkqubo yokukhula kwee-wafers ze-SiC, kodwa emva kokusetyenziswaI-TaC, umahluko ubalulekile. Apha ngezantsi luthelekiso lweewafers ezine-TaC nangaphandle kwayo, kunye neendawo zeSimicera zokukhula kwekristale enye.

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kunye nangaphandle kwe-TaC

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Emva kokusebenzisa i-TaC (ekunene)

Ngaphezu koko, iSemicera'sIimveliso ezigqunywe yi-TaCbonisa ubomi benkonzo obude kunye nokumelana nobushushu obuphezulu xa kuthelekiswaIingubo zeSiC.Imilinganiselo yeLabhoratri ibonise ukuba yethuIingubo ze-TaCiyakwazi ukusebenza rhoqo kumaqondo obushushu ukuya kuma 2300 degrees Celsius ixesha elide. Ngezantsi yimizekelo yeesampulu zethu:

 
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Semicera Indawo yokusebenzela
Indawo yokusebenza yeSemicera 2
Umatshini wezixhobo
Semicera Ware House
Ukucutshungulwa kwe-CNN, ukucocwa kweekhemikhali, ukugquma kwe-CVD
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