I-TaC igqume izithwali ze-epitaxial waferzidla ngokusetyenziswa ekulungiseleleni izixhobo eziphezulu ze-optoelectronic, izixhobo zamandla, iinzwa kunye nezinye iinkalo. Okui-epitaxial wafer carrieribhekisa ekubekweni kweI-TaCifilimu ebhityileyo kwi-substrate ngexesha lenkqubo yokukhula kwekristale ukwenza iwafer enesakhiwo esithile kunye nokusebenza kulungiselelo lwesixhobo esilandelayo.
Itekhnoloji ye-Chemical vapor deposition (CVD) idla ngokusetyenziswa ukulungiselelaI-TaC igqume izithwali ze-epitaxial wafer. Ngokuphendula i-metal organic precursors kunye ne-carbon source gesi kwiqondo lokushisa eliphezulu, ifilimu ye-TaC inokufakwa kumphezulu we-crystal substrate. Le filimu inokuba neempawu ezibalaseleyo zombane, i-optical and mechanical properties kwaye ifanelekile ukulungiselela izixhobo ezahlukeneyo zokusebenza eziphezulu.
I-Semicera ibonelela ngeengubo ezikhethekileyo ze-tantalum carbide (TaC) kumacandelo ahlukeneyo kunye nabathwali.Inkqubo ehamba phambili yokugqoka i-Semicera yenza iingubo ze-tantalum carbide (TaC) zifezekise ukucoceka okuphezulu, ukuzinza kweqondo lokushisa eliphezulu kunye nokunyamezela kweekhemikhali eziphezulu, ukuphucula umgangatho wemveliso ye-crystals ye-SIC / GAN kunye neengqimba ze-EPI (Isixhasi seTaC esigqunywe ngegraphite), kunye nokwandisa ubomi bamacandelo angundoqo we-reactor. Ukusetyenziswa kwetantalum carbide TaC coating kukusombulula ingxaki edge kunye nokuphucula umgangatho wokukhula kwekristale, kwaye iSemicera iye yasombulula itekhnoloji ye-tantalum carbide coating (CVD), ifikelele kwinqanaba eliphezulu lamazwe ngamazwe.
Emva kweminyaka yophuhliso, iSemicera yoyisile iteknoloji yeCVD TaCngeenzame ezidibeneyo zesebe leR&D. Iziphene kulula ukwenzeka kwinkqubo yokukhula kwee-wafers ze-SiC, kodwa emva kokusetyenziswaI-TaC, umahluko ubalulekile. Apha ngezantsi luthelekiso lweewafers ezine-TaC nangaphandle kwayo, kunye neendawo zeSimicera zokukhula kwekristale enye.
kunye nangaphandle kwe-TaC
Emva kokusebenzisa i-TaC (ekunene)
Ngaphezu koko, iSemicera'sIimveliso ezigqunywe yi-TaCbonisa ubomi benkonzo obude kunye nokumelana nobushushu obuphezulu xa kuthelekiswaIingubo zeSiC.Imilinganiselo yeLabhoratri ibonise ukuba yethuIingubo ze-TaCiyakwazi ukusebenza rhoqo kumaqondo obushushu ukuya kuma 2300 degrees Celsius ixesha elide. Ngezantsi yimizekelo yeesampulu zethu:
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I-Tantalum carbide (i-TaC) yoMgqume iPlanethi yePlanethi
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I-Tantalum Carbide Coated Coated Graphite Cover
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I-porous tantalum carbide, imathiriyeli eshushu yentsimi...
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Custom CVD Tantalum carbide iindawo zokugquma
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Umsesane owenziwe ngokwezifiso weTantalum Carbide
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I-CVD Tantalum Carbide Coated Halfmoon Part