TaC Coated Epi Wafer Carrier

Inkcazelo emfutshane:

I-TaC Coated Epi Wafer Carrier yi-Semicera yenzelwe ukusebenza okuphezulu kwiinkqubo ze-epitaxial. Ingubo yayo ye-tantalum carbide inika ukuqina okukhethekileyo kunye nozinzo lobushushu obuphezulu, iqinisekisa inkxaso ye-wafer eyonakeleyo kunye nokusebenza kakuhle kwemveliso. Imveliso echanekileyo ye-Semicera iqinisekisa umgangatho ohambelanayo kunye nokuthembeka kwizicelo ze-semiconductor.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-TaC igqume izithwali ze-epitaxial waferzidla ngokusetyenziswa ekulungiseleleni izixhobo eziphezulu ze-optoelectronic, izixhobo zamandla, izinzwa kunye nezinye iinkalo. Okui-epitaxial wafer carrieribhekisa ekubekweni kweI-TaCifilimu ebhityileyo kwi-substrate ngexesha lenkqubo yokukhula kwekristale ukwenza iwafer enesakhiwo esithile kunye nokusebenza kulungiselelo lwesixhobo esilandelayo.

Itekhnoloji ye-Chemical vapor deposition (CVD) idla ngokusetyenziswa ukulungiselelaI-TaC igqume izithwali ze-epitaxial wafer. Ngokuphendula i-metal organic precursors kunye ne-carbon source gesi kwiqondo lokushisa eliphezulu, ifilimu ye-TaC inokufakwa kumphezulu we-crystal substrate. Le filimu inokuba neempawu ezibalaseleyo zombane, i-optical and mechanical properties kwaye ifanelekile ukulungiselela izixhobo ezahlukeneyo zokusebenza eziphezulu.

I-Semicera ibonelela ngeengubo ezikhethekileyo ze-tantalum carbide (TaC) kumacandelo ahlukeneyo kunye nabathwali.Inkqubo ehamba phambili yokugqoka i-Semicera yenza iingubo ze-tantalum carbide (TaC) zifezekise ukucoceka okuphezulu, ukuzinza kweqondo lokushisa eliphezulu kunye nokunyamezela kweekhemikhali eziphezulu, ukuphucula umgangatho wemveliso ye-crystals ye-SIC / GAN kunye neengqimba ze-EPI (Isixhasi seTaC esigqunywe ngegraphite), kunye nokwandisa ubomi bamacandelo angundoqo we-reactor. Ukusetyenziswa kwetantalum carbide TaC coating kukusombulula ingxaki edge kunye nokuphucula umgangatho wokukhula kwekristale, kwaye iSemicera iye yasombulula itekhnoloji ye-tantalum carbide coating (CVD), ifikelele kwinqanaba eliphezulu lamazwe ngamazwe.

Emva kweminyaka yophuhliso, iSemicera yoyisile iteknoloji yeCVD TaCngeenzame ezidibeneyo zesebe leR&D. Iziphene kulula ukwenzeka kwinkqubo yokukhula kwee-wafers ze-SiC, kodwa emva kokusetyenziswaI-TaC, umahluko ubalulekile. Apha ngezantsi luthelekiso lweewafers ezine-TaC nangaphandle kwayo, kunye neendawo zeSimicera zokukhula kwekristale enye.

Ukusebenza okuphezulu kwetantalum carbide coating_ kuphucula ukusebenza kakuhle kwemveliso yemizi-mveliso kunye nokunciphisa iindleko zokugcinwa komfanekiso obonakalayo

Inxalenye ye-Tac yokukhula kwekristale enye

I-Antiwear tantalum carbide coating_ Ikhusela izixhobo ekunxibeni nasekudlekeni Umfanekiso okhoyo

Igraphite eneringi egqunywe yi-TaC

kunye nangaphandle kwe-TaC

Emva kokusebenzisa i-TaC (ekunene)

Ngaphezu koko, iSemicera'sIimveliso ezigqunywe yi-TaCbonisa ubomi benkonzo obude kunye nokumelana nobushushu obuphezulu xa kuthelekiswaIingubo zeSiC.Imilinganiselo yeLabhoratri ibonise ukuba yethuIingubo ze-TaCiyakwazi ukusebenza rhoqo kumaqondo obushushu ukuya kuma 2300 degrees Celsius ixesha elide. Ngezantsi yimizekelo yeesampulu zethu: