Ii-wafers ze-SOI

Inkcazelo emfutshane:

I-SOI wafer sisakhiwo esifana nesangweji esinemigangatho emithathu; Kubandakanya umaleko ophezulu (uluhlu lwesixhobo), umbindi womqolo weoksijini ongcwatyiweyo (kwi-insulating SiO2 layer) kunye ne-substrate esezantsi (i-silicon eninzi). Ii-wafers ze-SOI ziveliswa kusetyenziswa indlela ye-SIMOX kunye netekhnoloji yokudibanisa i-wafer, evumela iileya ezincinci kunye nezichanekileyo zesixhobo, ubukhulu obufanayo kunye noxinzelelo oluphantsi lwesiphene.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-SOI Wafers(1)

Indawo yosetyenziso

1. Isiphaluka esihlanganisiweyo esinesantya esiphezulu

2. Izixhobo zeMicrowave

3. Isiphaluka esihlanganisiweyo sobushushu obuphezulu

4. Izixhobo zamandla

5. Isekethe edibeneyo yamandla aphantsi

6. I-MEMS

7. Isekethe edibeneyo yombane ophantsi

Into		Ingxoxo
Kuko konke	I-Wafer Diameter 晶圆尺寸(mm)	50/75/100/125/150/200mm±25um
	Ukugoba/Ukugoba 翘曲度(	<10um
	Amacandelo 颗粒度(	0.3um<30ea
	Iiflethi/Inotshi 定位边/定位槽	Isicaba okanye iNotshi
	Ukungabandakanywa kuMda 边缘去除(mm)	/
Uluhlu lwesixhobo 器件层	Isixhobo-umaleko Uhlobo/Dopant 器件层掺杂类型	N-Uhlobo/P-Uhlobo B/ P/ Sb / Njengoko
	Isixhobo-umaleko wokuqhelanisa 器件层晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Isixhobo-umaleko Ukutyeba 器件层厚度(um)	0.1 ~ 300um
	Isixhobo-Umaleko wokuxhathisa 器件层电阻率(ohm•cm)	0.001 ~ 100,000 ohm-cm
	Isixhobo-umaleko amasuntswana 器件层颗粒度(	<30ea@0.3
	Uluhlu lweSixhobo TTV 器件层TTV(	<10um
	Uluhlu lweSixhobo Gqiba 器件层表面处理	Ilungisiwe
IBHOKISI	Ukutyeba kwe-Thermal oxide 埋氧层厚度(um)	50nm(500Å)~15um
Handle Layer 衬底	Phatha iWafer Type/Dopant 衬底层类型	N-Uhlobo/P-Uhlobo B/ P/ Sb / Njengoko
	Phatha iWafer Orientation 衬底晶向	<1-0-0> / <1-1-1> / <1-1-0>
	Phatha iWafer Resistivity 衬底电阻率(ohm•cm)	0.001 ~ 100,000 ohm-cm
	Bamba Ukutyeba kweWafer 衬底厚度(um)	> 100um
	Phatha iWafer Gqiba 衬底表面处理	Ilungisiwe
Ii-wafers ze-SOI zenkcazo ekujoliswe kuyo zinokulungiswa ngokweemfuno zabathengi.