I-Semicera's SiN Ceramics Plain Substrates ibonelela ngesisombululo esisebenza kakhulu kwiintlobo ngeentlobo zezicelo ze-elektroniki kunye nezoshishino. Eyaziwa ngokuba yi-thermal conductivity egqwesileyo kunye namandla omatshini, ezi substrates ziqinisekisa ukusebenza okuthembekileyo kwiindawo ezifunayo.
I-SiN yethu (i-Silicon Nitride) ii-ceramics zenzelwe ukuphatha amaqondo obushushu agqithisileyo kunye neemeko zoxinzelelo oluphezulu, zizenze zilungele umbane wamandla aphezulu kunye nezixhobo eziphambili ze-semiconductor. Ukuqina kwabo kunye nokuchasana nokutshatyalaliswa kwe-thermal kubenza balungele ukusetyenziswa kwizicelo apho ukuthembeka kunye nokusebenza kubaluleke kakhulu.
Iinkqubo zokuvelisa ezichanekileyo zeSemicera ziqinisekisa ukuba i-substrate nganye ethafeni ihlangabezana nemigangatho engqongqo yobulunga. Oku kubangela ukuba ii-substrates ezinobungqingqwa obuhambelanayo kunye nomgangatho womphezulu, eziyimfuneko ekufezekiseni ukusebenza kakuhle kwiindibano zombane kunye neenkqubo.
Ukongeza kwiinzuzo zabo ezishushu kunye nezomatshini, iiSiN Ceramics Plain Substrates zibonelela ngeempawu ezibalaseleyo zokugquma umbane. Oku kuqinisekisa ukuphazamiseka okuncinci kombane kwaye kunegalelo kuzinzo jikelele kunye nokusebenza kakuhle kwamacandelo e-elektroniki, ukuphucula ubomi babo bokusebenza.
Ngokukhetha iSemicera's SiN Ceramics Plain Substrates, ukhetha imveliso edibanisa isayensi yezinto eziphambili kunye nemveliso ephezulu. Ukuzibophelela kwethu kumgangatho kunye nezinto ezintsha kuqinisekisa ukuba ufumana ama-substrates ahlangabezana neyona migangatho iphezulu yoshishino kunye nokuxhasa impumelelo yeeprojekthi zakho zobuchwephesha obuphambili.
| Izinto | Imveliso | Uphando | Dummy |
| Iiparamitha zeCrystal | |||
| Iipolytype | 4H | ||
| Imposiso yokuma kumphezulu | <11-20>4±0.15° | ||
| Iiparamitha zoMbane | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukuxhathisa | 0.015-0.025ohm · cm | ||
| IiParameters zoomatshini | |||
| Ububanzi | 150.0±0.2mm | ||
| Ukutyeba | 350±25 μm | ||
| Ukuqhelaniswa neflethi ephambili | [1-100] ± 5 ° | ||
| Ubude beflethi bokuqala | 47.5±1.5mm | ||
| Iflethi yesibini | Akukho nanye | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Ukuqubuda | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Ngaphambili(Si-face) uburhabaxa(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Ulwakhiwo | |||
| Ukuxinana kweMibhobho | <1 iya/cm2 | <10 i/cm2 | <15 i/cm2 |
| Ukungcola kwesinyithi | ≤5E10athom/cm2 | NA | |
| I-BPD | ≤1500 i-ea/cm2 | ≤3000 i/cm2 | NA |
| TSD | ≤500 i/cm2 | ≤1000 nge-cm2 | NA |
| Umgangatho wangaphambili | |||
| Ngaphambili | Si | ||
| Ukugqitywa komphezulu | Si-ubuso CMP | ||
| Amacandelo | ≤60ea/wafer (ubukhulu≥0.3μm) | NA | |
| Imikrwelo | ≤5ea/mm. Ubude obongezelekayo ≤Ububanzi | Ubude obongezelekayo≤2*Ububanzi | NA |
| Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko | Akukho nanye | NA | |
| Iitshiphusi ze-Edge/i-idents/fracture/hex plates | Akukho nanye | ||
| Iindawo zePolytype | Akukho nanye | Indawo eyongezelekayo≤20% | Indawo eyongezelekayo≤30% |
| Ukumakishwa kwelaser yangaphambili | Akukho nanye | ||
| Umgangatho wasemva | |||
| Emva kokugqiba | C-ubuso CMP | ||
| Imikrwelo | ≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi | NA | |
| Iziphene zangasemva (iitshiphusi zomphetho/iindents) | Akukho nanye | ||
| Umqolo uburhabaxa | Ra≤0.2nm (5μm*5μm) | ||
| Ukumakishwa kwelaser yangasemva | 1 mm (ukusuka kumphetho ophezulu) | ||
| Edge | |||
| Edge | Chamfer | ||
| Ukupakishwa | |||
| Ukupakishwa | I-Epi ilungele ukupakishwa kwevacuum Ukupakishwa kweekhasethi ezininzi | ||
| *Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD. | |||
