I-Semicera Silicon Wafers zenziwe ngobuchule ukuze zisebenze njengesiseko soluhlu olubanzi lwezixhobo ze-semiconductor, ukusuka kwii-microprocessors ukuya kwiiseli ze-photovoltaic. La mawafa enziwe ngobuchwephesha obucokisekileyo kunye nokucoceka okuphezulu, okuqinisekisa ukusebenza ngokugqibeleleyo kwizicelo ezahlukeneyo ze-elektroniki.
Zenziwe kusetyenziswa ubuchule obuphezulu, iiSemicera Silicon Wafers zibonisa ukuthambeka okungaqhelekanga kunye nokufana, okubalulekileyo ekuphumezeni izivuno eziphezulu kulwakhiwo lwesemiconductor. Eli nqanaba lokuchaneka linceda ekunciphiseni iziphene kunye nokuphucula ukusebenza kakuhle kwezinto zombane.
Ubulunga obuphezulu beSemicera Silicon Wafers bubonakala kwiimpawu zabo zombane, ezinegalelo ekusebenzeni okuphuculweyo kwezixhobo ze-semiconductor. Ngamanqanaba aphantsi okungcola kunye nomgangatho ophezulu wekristale, ezi ziqwenga zibonelela ngeqonga elifanelekileyo lokuphuhlisa i-elektroniki yokusebenza okuphezulu.
Ifumaneka ngobukhulu obahlukeneyo kunye neenkcukacha, i-Semicera Silicon Wafers inokulungelelaniswa ukuhlangabezana neemfuno ezithile zamashishini ahlukeneyo, kuquka i-computing, i-telecommunications, kunye namandla avuselelekayo. Nokuba yeyemveliso enkulu okanye uphando olukhethekileyo, ezi wafers zizisa iziphumo ezithembekileyo.
I-Semicera izibophelele ekuxhaseni ukukhula kunye nokutsha kwishishini le-semiconductor ngokubonelela ngee-wafers ze-silicon ezikumgangatho ophezulu ezihlangabezana nemigangatho ephezulu yoshishino. Ngokugxila ekuchanekeni nasekuthembekeni, iSemicera yenza abavelisi batyhale imida yetekhnoloji, baqinisekise ukuba iimveliso zabo zihlala ziphambili kwiimarike.
| Izinto | Imveliso | Uphando | Dummy |
| Iiparamitha zeCrystal | |||
| Iipolytype | 4H | ||
| Imposiso yokuma kumphezulu | <11-20>4±0.15° | ||
| Iiparamitha zoMbane | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukuxhathisa | 0.015-0.025ohm · cm | ||
| Iiparamitha zoomatshini | |||
| Ububanzi | 150.0±0.2mm | ||
| Ukutyeba | 350±25 μm | ||
| Ukuqhelaniswa neflethi ephambili | [1-100] ± 5 ° | ||
| Ubude beflethi bokuqala | 47.5±1.5mm | ||
| Iflethi yesibini | Akukho nanye | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Ukuqubuda | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Ngaphambili(Si-face) uburhabaxa(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Ulwakhiwo | |||
| Ukuxinana kweMibhobho | <1 iya/cm2 | <10 i/cm2 | <15 i/cm2 |
| Ukungcola kwesinyithi | ≤5E10athom/cm2 | NA | |
| I-BPD | ≤1500 i-ea/cm2 | ≤3000 nge-cm2 | NA |
| TSD | ≤500 i/cm2 | ≤1000 nge-cm2 | NA |
| Umgangatho wangaphambili | |||
| Ngaphambili | Si | ||
| Ukugqitywa komphezulu | Si-ubuso CMP | ||
| Amacandelo | ≤60ea/wafer (ubukhulu≥0.3μm) | NA | |
| Imikrwelo | ≤5ea/mm. Ubude obongezelekayo ≤Ububanzi | Ubude obongezelekayo≤2*Ububanzi | NA |
| Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko | Akukho nanye | NA | |
| Iitshiphusi ze-Edge/i-idents/fracture/hex plates | Akukho nanye | ||
| Iindawo zePolytype | Akukho nanye | Indawo eyongezelekayo≤20% | Indawo eyongezelekayo≤30% |
| Ukumakishwa kwelaser yangaphambili | Akukho nanye | ||
| Umgangatho wasemva | |||
| Emva kokugqiba | C-ubuso CMP | ||
| Imikrwelo | ≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi | NA | |
| Iziphene zangasemva (iitshiphusi zomphetho/iindindi) | Akukho nanye | ||
| Umqolo uburhabaxa | Ra≤0.2nm (5μm*5μm) | ||
| Ukumakishwa kwelaser yangasemva | 1 mm (ukusuka kumphetho ophezulu) | ||
| Edge | |||
| Edge | Chamfer | ||
| Ukupakishwa | |||
| Ukupakishwa | I-Epi ilungele ukupakishwa kwevacuum Ukupakishwa kweekhasethi ezininzi | ||
| *Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD. | |||
