Silicon Thermal Oxide Wafer

Inkcazelo emfutshane:

I-Semicera Energy Technology Co., Ltd. ngumboneleli okhokelayo okhethekileyo kwi-wafer kunye ne-semiconductor consumables ephezulu. Sizinikezele ekunikezeni umgangatho ophezulu, othembekileyo, kunye neemveliso ezintsha kwimveliso ye-semiconductor, imboni ye-photovoltaic kunye nezinye iindawo ezinxulumene nazo.

Umgca wethu wemveliso uquka i-SiC/TaC egqunywe ngeemveliso zegraphite kunye neemveliso ze-ceramic, ezibandakanya izinto ezahlukeneyo ezifana ne-silicon carbide, i-silicon nitride, kunye ne-aluminium oxide kunye nokunye.

Okwangoku, sikuphela komvelisi obonelela ngobunyulu be-99.9999% ye-SiC yokwambathisa kunye ne-99.9% ye-silicon carbide ehlaziyiweyo. Ubude obuphezulu bokugquma kweSiC sinokwenza i-2640mm.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Umaleko we-thermal oxide we-silicon wafer ngumaleko we-oxide okanye umaleko we-silica owenziwe kumphezulu ongenanto we-silicon wafer phantsi kweemeko zobushushu obuphezulu kunye ne-agent oxidizing.Umaleko we-thermal oxide we-silicon wafer udla ngokukhuliswa kwisithando somlilo esithe tye, kwaye uluhlu lobushushu lokukhula luqhele ukuba yi-900 ° C ~ 1200 ° C, kwaye kukho iindlela ezimbini zokukhula "ze-oxidation emanzi" kunye "ne-oxidation eyomileyo". Umaleko we-thermal oxide ngumaleko weoxide "okhulileyo" one-homogeneity ephezulu kunye namandla aphezulu e-dielectric kune-CVD edipozithiweyo umaleko weoxide. Umaleko we-thermal oxide ngumaleko ogqwesileyo we-dielectric njenge-insulator. Kwizixhobo ezininzi ezisekelwe kwi-silicon, i-thermal oxide layer idlala indima ebalulekileyo njenge-doping blocking layer kunye ne-dielectric yomhlaba.

Iingcebiso: Uhlobo lwe-oxidation

1. I-oxidation eyomileyo

I-silicon iphendula kunye ne-oksijini, kwaye umaleko we-oksidi uhambela kwi-basal layer. I-oxidation eyomileyo kufuneka iqhutywe kwiqondo lokushisa kwe-850 ukuya kwi-1200 ° C, kwaye izinga lokukhula liphantsi, elingasetyenziselwa ukukhula kwesango lokufakelwa kwe-MOS. Xa umgangatho ophezulu, i-ultra-thin silicon oxide layer ifuneka, i-oxidation eyomileyo ikhethwa ngaphezu kwe-oxidation emanzi.

Umthamo we-oxidation owomileyo: 15nm~300nm(150A ~ 3000A)

2. I-oxidation emanzi

Le ndlela isebenzisa umxube we-hydrogen kunye ne-oksijini ecocekileyo kakhulu ukutshisa kwi ~ 1000 ° C, ngaloo ndlela ivelisa umphunga wamanzi ukwenza umaleko we-oxide. Nangona i-oxidation emanzi ayikwazi ukuvelisa njengomgangatho ophezulu we-oxidation layer njenge-oxidation eyomileyo, kodwa eyaneleyo ukuba isetyenziswe njengendawo yodwa, xa kuthelekiswa ne-oxidation eyomileyo inenzuzo ecacileyo kukuba inezinga eliphezulu lokukhula.

Umthamo we-oxidation omanzi: 50nm~ 15µm (500A ~15µm)

3. Indlela eyomileyo - indlela emanzi - indlela eyomileyo

Kule ndlela, i-oksijeni ecocekileyo eyomileyo ikhutshwa kwisithando somlilo kwinqanaba lokuqala, i-hydrogen yongezwa phakathi kwe-oxidation, kwaye i-hydrogen igcinwe ekugqibeleni ukuze iqhube i-oxidation kunye ne-oksijeni ecocekileyo eyomileyo ukuze yenze i-denser oxidation isakhiwo kunokuba inkqubo ye-oxidation emanzi eqhelekileyo ngendlela yomphunga wamanzi.

4. I-TEOS oxidation

Ubuchwephesha be-Oxidation ILogo Simahla Akukho mlinganiselo Ipapashwe ngu- 氧化工艺	I-oxidation emanzi okanye i-oxidation eyomileyo ILogo Simahla Akukho mlinganiselo Ipapashwe ngu-湿法氧化/干法氧化
Ububanzi 硅片直径	2″ / 3″ / 4″ / 6″ / 8″ / 12″ 英寸
Ukutyeba kweoksidi ILogo Simahla Akukho mlinganiselo Ipapashwe ngu- 氧化层厚度	100 Å ~ 15µm 10nm ~ 15µm
Ukunyamezelana 公差范围	+/- 5%
Umphezulu 表面	I-Oxidation yecala elinye (i-SSO) / i-Oxidation yaMacala amabini (DSO) 单面氧化/双面氧化
Iziko ILogo Simahla Akukho mlinganiselo Ipapashwe ngu- 氧化炉类型	Isithando somlilo esithe tye 水平管式炉
Irhasi 气体类型	I-Hydrogen kunye negesi ye-Oxygen 氢氧混合气体
Ubushushu ILogo Simahla Akukho mlinganiselo Ipapashwe ngu- 氧化温度	900℃ ~ 1200 ℃ 900 ~ 1200摄氏度
Isalathiso sokuqhafaza 折射率	1.456