ISemicera's Silicon Nitride Ceramic Substrate imele incopho yetekhnoloji yemathiriyeli ephucukileyo, ibonelela nge-thermal conductivity ebalaseleyo kunye neempawu zoomatshini ezomeleleyo. Eyenzelwe usetyenziso oluphezulu, le substrate igqwesa kwiindawo ezifuna ulawulo oluthembekileyo lwe-thermal kunye nokuthembeka kwesakhiwo.
Ii-Silicon Nitride Ceramic Substrates zethu ziyilelwe ukuba zimelane namaqondo obushushu agqithisileyo kunye neemeko ezirhabaxa, zizenza zilungele izixhobo zombane ezinamandla aphezulu kunye nee-frequency eziphezulu. I-conductivity yabo ephezulu ye-thermal iqinisekisa ukuchithwa kokushisa okusebenzayo, okubalulekileyo ekugcineni ukusebenza kunye nobude bezinto ze-elektroniki.
Ukuzinikela kweSemicera kumgangatho kubonakala kuyo yonke iSilicon Nitride Ceramic Substrate esiyivelisayo. I-substrate nganye yenziwa ngokusebenzisa iinkqubo zanamhlanje zokuqinisekisa ukusebenza okuhambelanayo kunye neziphene ezincinci. Eli nqanaba liphezulu lokuchaneka lixhasa iimfuno ezingqongqo zemizi-mveliso efana neemoto, i-aerospace, kunye nonxibelelwano.
Ukongeza kwiinzuzo zabo ezishushu kunye nezomatshini, ii-substrates zethu zibonelela ngeempawu ezibalaseleyo zokugquma umbane, ezinegalelo ekuthembekeni okupheleleyo kwezixhobo zakho zombane. Ngokunciphisa ukuphazamiseka kombane kunye nokuphucula uzinzo, iSemicera's Silicon Nitride Ceramic Substrates idlala indima ebalulekileyo ekuphuculeni ukusebenza kwesixhobo.
Ukukhetha iSemicera's Silicon Nitride Ceramic Substrate kuthetha ukutyala imali kwimveliso enikezela ukusebenza okuphezulu kunye nokuqina. Ii-substrates zethu zenzelwe ukukhawulelana neemfuno zosetyenziso lwe-elektroniki olukwinqanaba eliphezulu, ukuqinisekisa ukuba izixhobo zakho ziyaxhamla kubuchwephesha bemathiriyeli ye-cutting-edge kunye nokuthembeka okukhethekileyo.
| Izinto | Imveliso | Uphando | Dummy |
| Iiparamitha zeCrystal | |||
| Iipolytype | 4H | ||
| Imposiso yokuma kumphezulu | <11-20>4±0.15° | ||
| Iiparamitha zoMbane | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukuxhathisa | 0.015-0.025ohm · cm | ||
| IiParameters zoomatshini | |||
| Ububanzi | 150.0±0.2mm | ||
| Ukutyeba | 350±25 μm | ||
| Ukuqhelaniswa neflethi ephambili | [1-100] ± 5 ° | ||
| Ubude beflethi bokuqala | 47.5±1.5mm | ||
| Iflethi yesibini | Akukho nanye | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Ukuqubuda | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Ngaphambili(Si-face) uburhabaxa(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Ulwakhiwo | |||
| Ukuxinana kweMibhobho | <1 iya/cm2 | <10 i/cm2 | <15 i/cm2 |
| Ukungcola kwesinyithi | ≤5E10athom/cm2 | NA | |
| I-BPD | ≤1500 i-ea/cm2 | ≤3000 i/cm2 | NA |
| TSD | ≤500 i/cm2 | ≤1000 nge-cm2 | NA |
| Umgangatho wangaphambili | |||
| Ngaphambili | Si | ||
| Ukugqitywa komphezulu | Si-ubuso CMP | ||
| Amacandelo | ≤60ea/wafer (ubukhulu≥0.3μm) | NA | |
| Imikrwelo | ≤5ea/mm. Ubude obongezelekayo ≤Ububanzi | Ubude obongezelekayo≤2*Ububanzi | NA |
| Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko | Akukho nanye | NA | |
| Iitshiphusi ze-Edge/i-idents/fracture/hex plates | Akukho nanye | ||
| Iindawo zePolytype | Akukho nanye | Indawo eyongezelekayo≤20% | Indawo eyongezelekayo≤30% |
| Ukumakishwa kwelaser yangaphambili | Akukho nanye | ||
| Umgangatho wasemva | |||
| Emva kokugqiba | C-ubuso CMP | ||
| Imikrwelo | ≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi | NA | |
| Iziphene zangasemva (iitshiphusi zomphetho/iindents) | Akukho nanye | ||
| Umqolo uburhabaxa | Ra≤0.2nm (5μm*5μm) | ||
| Ukumakishwa kwelaser yangasemva | 1 mm (ukusuka kumphetho ophezulu) | ||
| Edge | |||
| Edge | Chamfer | ||
| Ukupakishwa | |||
| Ukupakishwa | I-Epi ilungele ukupakishwa kwevacuum Ukupakishwa kweekhasethi ezininzi | ||
| *Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD. | |||
