I-silicon nitride edityanisiweyo ye-silicon carbide plate

I-Silicon nitride edityanisiweyo ye-silicon carbide ipleyiti ebonisiweyo Umfanekiso

Inkcazelo emfutshane:

I-Si3N4 eboshiweyo ye-SiC njengohlobo olutsha lwezinto eziphikisayo, zisetyenziswa ngokubanzi.Ubushushu obufakayo yi-1400 C.Inozinzo olungcono lwe-thermal, ukutshatyalaliswa kwe-thermal, okungcono kune-plain refractory material.Inayo ne-anti-I-oxidation, ukumelana nokukhula okuphezulu, ukuxhathisa, ukugoba okuphezulu.

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Iinkcukacha zeMveliso

Iithegi zeMveliso

I-silicon nitride ebotshelelwe kwi-silicon carbide

I-Si3N4 edibeneyo ye-SiC ye-ceramic refractory material, ixutywe kunye ne-SIC ephezulu ecocekileyo yomgubo kunye ne-Silicon powder, emva kwekhosi ye-slip casting, i-reaction sintered phantsi kwe-1400 ~ 1500 ° C.Ngexesha le-sintering, ukugcwalisa i-Nitrogen ecocekileyo ephezulu kwiziko, emva koko i-silicon iya kusabela nge-Nitrogen kwaye ivelise i-Si3N4, ngoko ke i-Si3N4 i-Si3N4 eboshiweyo yezinto ze-SiC yenziwe nge-silicon nitride (23%) kunye ne-silicon carbide (75%) njengeyona nto iphambili ekrwada. , ixutywe nezinto eziphilayo, kwaye ibunjwe ngumxube, i-extrusion okanye ukugalela, emva koko yenziwe emva kokumiswa kunye ne-nitrogenization.

Iimpawu kunye neenzuzo:

1.Hukunyamezela ubushushu
I-2.I-conductivity ephezulu ye-thermal kunye nokuxhatshazwa kokutshatyalaliswa
I-3.Amandla aphezulu omatshini kunye nokuxhatshazwa kwe-abrasion
I-4.Ukusebenza kakuhle kwamandla kunye nokumelana nokubola

Sibonelela ngomgangatho ophezulu kunye nokuchaneka komatshini we-NSiC amacandelo e-ceramic aqhuba

1.I-Slip casting
2.Ukukhupha
3.Uni Axial Pressing
4.Isostatic Pressing

I-datasheet yezinto eziphathekayo

>Ukwakheka kweeKhemikhali	Sic	75%
	Si3N4	≥23%
	Mahala Si	0%
Ubuninzi bobuninzi (g/cm3)		2.70～2.80
I-porosity ebonakalayo (%)		12～15
Goba amandla kuma-20 ℃(MPa)		180～190
Goba amandla kwi-1200 ℃(MPa)		207
Goba amandla kwi-1350 ℃(MPa)		210
Amandla acinezelayo kuma-20 ℃(MPa)		580
I-Thermal conductivity kwi-1200 ℃(w/mk)		19.6
I-coefficient yokwandiswa kweThermal kwi-1200 ℃(x 10-6/C)		4.70
Ukuxhathisa ukothuka kwe-Thermal		Egqwesileyo
Max.ubushushu (℃)		1600

I-silicon nitride edityanisiweyo ye-silicon carbide plate1

I-silicon nitride edityanisiweyo ye-silicon carbide plate

I-WeiTai Energy Technology Co., Ltd. ngumthengisi ohamba phambili we-semiconductor ceramics kunye nomvelisi kuphela e-China onokunika ngaxeshanye ucoceko oluphezulu lwe-silicon carbide ceramic (ingakumbi i-Recrystallized SiC) kunye ne-CVD SiC yokwaleka.Ukongeza, inkampani yethu izibophelele kumasimi e-ceramic afana ne-alumina, i-aluminium nitride, i-zirconia, kunye ne-silicon nitride, njl.

Iimveliso zethu eziphambili ziquka: i-silicon carbide etching disc, i-silicon carbide boat tow, i-silicon carbide wafer boat (Photovoltaic & Semiconductor), i-silicon carbide furnace tube, i-silicon carbide cantilever paddle, i-silicon carbide chucks, i-silicon carbide beam, kunye ne-CVD SiC coating kunye ne-TaC. ukutyabeka.Iimveliso ezisetyenziswa ikakhulu kwi-semiconductor kunye namashishini e-photovoltaic, njengezixhobo zokukhula kwekristale, i-epitaxy, i-etching, ukupakishwa, ukugquma kunye neziko lokusasaza, njl.

Inkampani yethu inezixhobo ezipheleleyo zokuvelisa ezifana nokubumba, ukuthambisa, ukusetyenzwa, izixhobo zokugquma, njl., ezinokugqiba onke amakhonkco ayimfuneko emveliso yemveliso kwaye ibe nokulawulwa okuphezulu komgangatho wemveliso;Isicwangciso esilungileyo sokuvelisa sinokukhethwa ngokweemfuno zemveliso, okubangela iindleko eziphantsi kunye nokubonelela abathengi ngeemveliso ezikhuphisanayo;Singakwazi ukuguquguquka kunye nokusebenza ngokufanelekileyo kwimveliso esekelwe kwiimfuno zokuhanjiswa kwe-odolo kunye ngokubambisana neenkqubo zolawulo lwe-intanethi, ukubonelela abathengi ngokukhawuleza kunye nexesha lokuhambisa eliqinisekisiweyo.