Ifilimu yeSilicon

Inkcazelo emfutshane:

Ifilimu yeSilicon yiSemicera yimathiriyeli ephezulu yokusebenza eyenzelwe iindidi zezicelo eziphambili kwi-semiconductor kunye ne-electronics industry. Yenziwe kwi-silicon ekumgangatho ophezulu, le filimu inikezela ngokufana okungaqhelekanga, ukuzinza kwe-thermal, kunye neempawu zombane, okwenza kube sisisombululo esifanelekileyo sokufakwa kwefilimu encinci, i-MEMS (iMicro-Electro-Mechanical Systems), kunye nokwenziwa kwesixhobo se-semiconductor.


Iinkcukacha zeMveliso

Iithegi zeMveliso

Ifilimu yeSilicon nguSemicera yinto ekumgangatho ophezulu, eyinjineli echanekileyo eyenzelwe ukuhlangabezana neemfuno ezingqongqo kwishishini le-semiconductor. Yenziwe kwi-silicon ecocekileyo, esi sisombululo sefilimu sincinci sibonelela ngokufana okugqwesileyo, ukucoceka okuphezulu, kunye neempawu ezikhethekileyo zombane kunye ne-thermal. Ilungele ukusetyenziswa kwizicelo ezahlukeneyo ze-semiconductor, kubandakanywa ukuveliswa kwe-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, kunye ne-Epi-Wafer. Ifilimu yeSilicon yeSemicera iqinisekisa ukusebenza okuthembekileyo kunye nokungaguquguqukiyo, iyenza ibe yinto ebalulekileyo kwi-microelectronics ephezulu.

Umgangatho oPhezulu kunye neNtsebenzo yeSemiconductor Manufacturing

Ifilimu yeSilicon yeSemicera yaziwa ngamandla ayo omatshini abalaseleyo, uzinzo oluphezulu lwe-thermal, kunye namazinga aphantsi aneziphene, zonke ezibaluleke kakhulu ekwenziweni kwee-semiconductors ezisebenza kakhulu. Ingaba isetyenziselwa ukuveliswa kwezixhobo ze-Gallium Oxide (Ga2O3), i-AlN Wafer, okanye i-Epi-Wafers, ifilimu inika isiseko esiqinileyo sokubekwa kwefilimu encinci kunye nokukhula kwe-epitaxial. Ukuhambelana kwayo nezinye ii-semiconductor substrate ezifana ne-SiC Substrate kunye ne-SOI Wafers iqinisekisa ukuhlanganiswa okungenamthungo kwiinkqubo ezikhoyo zokuvelisa, kunceda ukugcina izivuno eziphezulu kunye nomgangatho wemveliso ongaguqukiyo.

Izicelo kuShishino lweSemiconductor

Kwishishini le-semiconductor, ifilimu yeSilicon yeSemicera isetyenziswa kuluhlu olubanzi lwezicelo, ukusuka kwimveliso yeSi Wafer kunye ne-SOI Wafer ukuya kusetyenziso olukhethekileyo olufana neSiN Substrate kunye nokudalwa kwe-Epi-Wafer. Ukucoceka okuphezulu kunye nokuchaneka kwale filimu kwenza ukuba kubaluleke kakhulu kwimveliso yezinto eziphambili ezisetyenziswe kuyo yonke into ukusuka kwi-microprocessors kunye neesekethe ezidibeneyo ukuya kwizixhobo ze-optoelectronic.

Ifilimu yeSilicon idlala indima ebalulekileyo kwiinkqubo ze-semiconductor ezifana nokukhula kwe-epitaxial, i-wafer bonding, kunye nokubekwa kwefilimu encinci. Iimpawu zayo ezithembekileyo zixabiseke ngokukodwa kumashishini afuna indawo elawulwa kakhulu, njengamagumbi acocekileyo kwiifabhu ze-semiconductor. Ukongeza, ifilimu yeSilicon inokudityaniswa kwiinkqubo zeekhasethi zokuphatha kakuhle i-wafer kunye nokuthutha ngexesha lemveliso.

Ukuthembeka kwexesha elide kunye nokuhambelana

Enye yeenzuzo eziphambili zokusebenzisa ifilimu yeSilicon yeSemicera kukuthembeka kwayo kwexesha elide. Ngokuhlala kwayo okugqwesileyo kunye nomgangatho ongaguqukiyo, le filimu ibonelela ngesisombululo esinokwethenjelwa kwiindawo zokuvelisa umthamo ophezulu. Ingaba isetyenziswe kwizixhobo eziphezulu ze-semiconductor ezichanekileyo okanye usetyenziso oluphezulu lwe-elektroniki, ifilimu yeSilicon yeSemicera iqinisekisa ukuba abavelisi banokufikelela ekusebenzeni okuphezulu kunye nokuthembeka kwiimveliso ezininzi.

Kutheni ukhetha ifilimu yeSilicon yeSemicera?

Ifilimu ye-Silicon evela kwi-Semicera yinto ebalulekileyo kwi-cutting-edge applications kwishishini le-semiconductor. Iimpawu zayo zokusebenza eziphezulu, ezibandakanya ukuzinza okuphezulu kwe-thermal, ukucoceka okuphezulu, kunye namandla omatshini, yenza kube lukhetho olufanelekileyo kubavelisi abafuna ukufikelela kwimigangatho ephezulu kwimveliso ye-semiconductor. Ukusuka kwi-Si Wafer kunye ne-SiC Substrate ukuya kwimveliso yeGallium Oxide Ga2O3 izixhobo, le filimu ihambisa umgangatho ongenakulinganiswa kunye nokusebenza.

Ngefilimu yeSilicon yeSemicera, unokuthembela kwimveliso ehlangabezana neemfuno zemveliso ye-semiconductor yanamhlanje, ebonelela ngesiseko esithembekileyo kwisizukulwana esilandelayo se-elektroniki.

Izinto

Imveliso

Uphando

Dummy

Iiparamitha zeCrystal

Iipolytype

4H

Imposiso yokuma kumphezulu

<11-20>4±0.15°

Iiparamitha zoMbane

I-Dopant

n-uhlobo lweNitrojeni

Ukuxhathisa

0.015-0.025ohm · cm

Iiparamitha zoomatshini

Ububanzi

150.0±0.2mm

Ukutyeba

350±25 μm

Ukuqhelaniswa neflethi ephambili

[1-100] ± 5 °

Ubude beflethi bokuqala

47.5±1.5mm

Iflethi yesibini

Akukho nanye

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Ukuqubuda

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

I-Wap

≤35 μm

≤45 μm

≤55 μm

Ngaphambili(Si-face) uburhabaxa(AFM)

Ra≤0.2nm (5μm*5μm)

Ulwakhiwo

Ukuxinana kweMibhobho

<1 iya/cm2

<10 i/cm2

<15 i/cm2

Ukungcola kwesinyithi

≤5E10athom/cm2

NA

I-BPD

≤1500 i-ea/cm2

≤3000 nge-cm2

NA

TSD

≤500 i/cm2

≤1000 nge-cm2

NA

Umgangatho wangaphambili

Ngaphambili

Si

Ukugqitywa komphezulu

Si-ubuso CMP

Amacandelo

≤60ea/wafer (ubukhulu≥0.3μm)

NA

Imikrwelo

≤5ea/mm. Ubude obongezelekayo ≤Ububanzi

Ubude obongezelekayo≤2*Ububanzi

NA

Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko

Akukho nanye

NA

Iitshiphusi ze-Edge/i-idents/fracture/hex plates

Akukho nanye

Iindawo zePolytype

Akukho nanye

Indawo eyongezelekayo≤20%

Indawo eyongezelekayo≤30%

Ukumakishwa kwelaser yangaphambili

Akukho nanye

Umgangatho wasemva

Emva kokugqiba

C-ubuso CMP

Imikrwelo

≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi

NA

Iziphene zangasemva (iitshiphusi zomphetho/iindindi)

Akukho nanye

Umqolo uburhabaxa

Ra≤0.2nm (5μm*5μm)

Ukumakishwa kwelaser yangasemva

1 mm (ukusuka kumphetho ophezulu)

Edge

Edge

Chamfer

Ukupakishwa

Ukupakishwa

I-Epi ilungele ukupakishwa kwevacuum

Ukupakishwa kweekhasethi ezininzi

*Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD.

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Iifafa zeSiC

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