Ifilimu yeSilicon nguSemicera yinto ekumgangatho ophezulu, eyinjineli echanekileyo eyenzelwe ukuhlangabezana neemfuno ezingqongqo kwishishini le-semiconductor. Yenziwe kwi-silicon ecocekileyo, esi sisombululo sefilimu sincinci sibonelela ngokufana okugqwesileyo, ukucoceka okuphezulu, kunye neempawu ezikhethekileyo zombane kunye ne-thermal. Ilungele ukusetyenziswa kwizicelo ezahlukeneyo ze-semiconductor, kubandakanywa ukuveliswa kwe-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, kunye ne-Epi-Wafer. Ifilimu yeSilicon yeSemicera iqinisekisa ukusebenza okuthembekileyo kunye nokungaguquguqukiyo, iyenza ibe yinto ebalulekileyo kwi-microelectronics ephezulu.
Umgangatho oPhezulu kunye neNtsebenzo yeSemiconductor Manufacturing
Ifilimu yeSilicon yeSemicera yaziwa ngamandla ayo omatshini abalaseleyo, uzinzo oluphezulu lwe-thermal, kunye namazinga aphantsi aneziphene, zonke ezibaluleke kakhulu ekwenziweni kwee-semiconductors ezisebenza kakhulu. Ingaba isetyenziselwa ukuveliswa kwezixhobo ze-Gallium Oxide (Ga2O3), i-AlN Wafer, okanye i-Epi-Wafers, ifilimu inika isiseko esiqinileyo sokubekwa kwefilimu encinci kunye nokukhula kwe-epitaxial. Ukuhambelana kwayo nezinye ii-semiconductor substrate ezifana ne-SiC Substrate kunye ne-SOI Wafers iqinisekisa ukuhlanganiswa okungenamthungo kwiinkqubo ezikhoyo zokuvelisa, kunceda ukugcina izivuno eziphezulu kunye nomgangatho wemveliso ongaguqukiyo.
Izicelo kuShishino lweSemiconductor
Kwishishini le-semiconductor, ifilimu yeSilicon yeSemicera isetyenziswa kuluhlu olubanzi lwezicelo, ukusuka kwimveliso yeSi Wafer kunye ne-SOI Wafer ukuya kusetyenziso olukhethekileyo olufana neSiN Substrate kunye nokudalwa kwe-Epi-Wafer. Ukucoceka okuphezulu kunye nokuchaneka kwale filimu kwenza ukuba kubaluleke kakhulu kwimveliso yezinto eziphambili ezisetyenziswe kuyo yonke into ukusuka kwi-microprocessors kunye neesekethe ezidibeneyo ukuya kwizixhobo ze-optoelectronic.
Ifilimu yeSilicon idlala indima ebalulekileyo kwiinkqubo ze-semiconductor ezifana nokukhula kwe-epitaxial, i-wafer bonding, kunye nokubekwa kwefilimu encinci. Iimpawu zayo ezithembekileyo zixabiseke ngokukodwa kumashishini afuna indawo elawulwa kakhulu, njengamagumbi acocekileyo kwiifabhu ze-semiconductor. Ukongeza, ifilimu yeSilicon inokudityaniswa kwiinkqubo zeekhasethi zokuphatha kakuhle i-wafer kunye nokuthutha ngexesha lemveliso.
Ukuthembeka kwexesha elide kunye nokuhambelana
Enye yeenzuzo eziphambili zokusebenzisa ifilimu yeSilicon yeSemicera kukuthembeka kwayo kwexesha elide. Ngokuhlala kwayo okugqwesileyo kunye nomgangatho ongaguqukiyo, le filimu ibonelela ngesisombululo esinokwethenjelwa kwiindawo zokuvelisa umthamo ophezulu. Ingaba isetyenziswe kwizixhobo eziphezulu ze-semiconductor ezichanekileyo okanye usetyenziso oluphezulu lwe-elektroniki, ifilimu yeSilicon yeSemicera iqinisekisa ukuba abavelisi banokufikelela ekusebenzeni okuphezulu kunye nokuthembeka kwiimveliso ezininzi.
Kutheni ukhetha ifilimu yeSilicon yeSemicera?
Ifilimu ye-Silicon evela kwi-Semicera yinto ebalulekileyo kwi-cutting-edge applications kwishishini le-semiconductor. Iimpawu zayo zokusebenza eziphezulu, ezibandakanya ukuzinza okuphezulu kwe-thermal, ukucoceka okuphezulu, kunye namandla omatshini, yenza kube lukhetho olufanelekileyo kubavelisi abafuna ukufikelela kwimigangatho ephezulu kwimveliso ye-semiconductor. Ukusuka kwi-Si Wafer kunye ne-SiC Substrate ukuya kwimveliso yeGallium Oxide Ga2O3 izixhobo, le filimu ihambisa umgangatho ongenakulinganiswa kunye nokusebenza.
Ngefilimu yeSilicon yeSemicera, unokuthembela kwimveliso ehlangabezana neemfuno zemveliso ye-semiconductor yanamhlanje, ebonelela ngesiseko esithembekileyo kwisizukulwana esilandelayo se-elektroniki.
Izinto | Imveliso | Uphando | Dummy |
Iiparamitha zeCrystal | |||
Iipolytype | 4H | ||
Imposiso yokuma kumphezulu | <11-20>4±0.15° | ||
Iiparamitha zoMbane | |||
I-Dopant | n-uhlobo lweNitrojeni | ||
Ukuxhathisa | 0.015-0.025ohm · cm | ||
Iiparamitha zoomatshini | |||
Ububanzi | 150.0±0.2mm | ||
Ukutyeba | 350±25 μm | ||
Ukuqhelaniswa neflethi ephambili | [1-100] ± 5 ° | ||
Ubude beflethi bokuqala | 47.5±1.5mm | ||
Iflethi yesibini | Akukho nanye | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
Ukuqubuda | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
Ngaphambili(Si-face) uburhabaxa(AFM) | Ra≤0.2nm (5μm*5μm) | ||
Ulwakhiwo | |||
Ukuxinana kweMibhobho | <1 iya/cm2 | <10 i/cm2 | <15 i/cm2 |
Ukungcola kwesinyithi | ≤5E10athom/cm2 | NA | |
I-BPD | ≤1500 i-ea/cm2 | ≤3000 nge-cm2 | NA |
TSD | ≤500 i/cm2 | ≤1000 nge-cm2 | NA |
Umgangatho wangaphambili | |||
Ngaphambili | Si | ||
Ukugqitywa komphezulu | Si-ubuso CMP | ||
Amacandelo | ≤60ea/wafer (ubukhulu≥0.3μm) | NA | |
Imikrwelo | ≤5ea/mm. Ubude obongezelekayo ≤Ububanzi | Ubude obongezelekayo≤2*Ububanzi | NA |
Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko | Akukho nanye | NA | |
Iitshiphusi ze-Edge/i-idents/fracture/hex plates | Akukho nanye | ||
Iindawo zePolytype | Akukho nanye | Indawo eyongezelekayo≤20% | Indawo eyongezelekayo≤30% |
Ukumakishwa kwelaser yangaphambili | Akukho nanye | ||
Umgangatho wasemva | |||
Emva kokugqiba | C-ubuso CMP | ||
Imikrwelo | ≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi | NA | |
Iziphene zangasemva (iitshiphusi zomphetho/iindindi) | Akukho nanye | ||
Umqolo uburhabaxa | Ra≤0.2nm (5μm*5μm) | ||
Ukumakishwa kwelaser yangasemva | 1 mm (ukusuka kumphetho ophezulu) | ||
Edge | |||
Edge | Chamfer | ||
Ukupakishwa | |||
Ukupakishwa | I-Epi ilungele ukupakishwa kwevacuum Ukupakishwa kweekhasethi ezininzi | ||
*Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD. |