Ukwazisa i-Silicon Carbide Horizontal Boat Plate yethu yodidi oluphezulu, eyilwe ngobunono ukulungiselela usetyenziso lwe-wafer yoshishino lwesemiconductor. Iyilwe kweyona silicon carbide igqwesileyo, ipleyiti yethu yesikhephe ethe tyaba ibalasele ngeempawu zayo eziphezulu zobushushu, ukumelana neekhemikhali, kunye nokomelela koomatshini. Ilungele iinkqubo zobushushu obuphezulu, le pleyiti yesikhephe yenzelwe ukuhambisa umsebenzi obalaseleyo, iqinisekisa ukuchaneka kunye nokusebenza kakuhle kuyo yonke into.
Ukuqina okuKhethekileyo:Yenziwe kwi-silicon carbide ephezulu, eyethu ipleyiti yesikhepheyenzelwe ukumelana namaqondo obushushu agqithisileyo ukuya kuthi ga1600°C, inika ukuqina kunye nobomi obungalinganiyo.
Ukusasazwa kobushushu obufanayo:I-thermal conductivity ye-silicon carbide iqinisekisa ukusasazeka kobushushu kwipleyiti, ibaluleke kakhulu ekugcineni inkqubo yokungaguquguquki kunye nokuphumeza imveliso ye-wafer ekumgangatho ophezulu.
Ukumelana neMichiza:Ukumelana neekhemikhali ezonakalisayo kunye nemekobume erhabaxa, ipleyiti yethu yesikhephe igcina imfezeko kunye nokusebenza, nakwezona zicelo zifunwa kakhulu zesemiconductor.
Amandla oomatshini aphezulu:Ulwakhiwo olomeleleyo lwethuipleyiti yesikhepheiqinisekisa amandla agqwesileyo oomatshini kunye nokumelana nokunxiba, ukunciphisa umngcipheko womonakalo kunye nesidingo sokutshintshwa rhoqo.
Usetyenziso:
YethuSilicon Carbide Horizontal Boat Plateigqibelele kuluhlu olubanzi lweenkqubo zobushushu obuphezulu kwimveliso ye-semiconductor, kubandakanywa kodwa kungaphelelanga kwi-diffusion, i-oxidation, i-ion implantation, kunye neenkqubo ze-CVD..Uyilo lwayo kunye nezixhobo ziqinisekisa ukuba zinokuxhasa iimfuno ezichanekileyo zokulungiswa kwe-wafer, okwenza kube yinto ebalulekileyo kwimigca yokuvelisa i-semiconductor.