IiSemicera'sI-Silicon Carbide Epitaxyyenzelwe ukuhlangabezana neemfuno ezingqongqo zezicelo zangoku zesemiconductor. Ngokusebenzisa iindlela eziphucukileyo zokukhula kwe-epitaxial, siqinisekisa ukuba umaleko ngamnye we-silicon carbide ubonisa umgangatho obalaseleyo wekristale, ukufana, kunye nokuxinana kwesiphene. Ezi mpawu zibalulekile ekuphuhliseni amandla ombane asebenza kakhulu, apho ukusebenza kakuhle kunye nolawulo lobushushu kubaluleke kakhulu.
II-Silicon Carbide EpitaxyInkqubo kwi-Semicera ilungiselelwe ukuvelisa iileya ze-epitaxial ezinobunzima obuchanekileyo kunye nolawulo lwe-doping, ukuqinisekisa ukusebenza okufanayo kuluhlu lwezixhobo. Eli nqanaba lokuchaneka liyimfuneko kwizicelo kwizithuthi zombane, iinkqubo zamandla avuselelekayo, kunye nonxibelelwano oluphezulu, apho ukuthembeka nokusebenza kakuhle kubaluleke kakhulu.
Ngaphezu koko, iSemicera'sI-Silicon Carbide Epitaxyibonelela nge-conductivity eyongeziweyo ye-thermal kunye ne-voltage ephezulu yokuqhekeka, iyenza ibe lolona khetho lukhethwayo kwizixhobo ezisebenza phantsi kweemeko ezinzima. Ezi mpawu zinegalelo kubomi obude besixhobo kunye nokuphucula ukusebenza kakuhle kwenkqubo iyonke, ngakumbi kumandla aphezulu kunye nemo yobushushu obuphezulu.
I-Semicera ikwabonelela ngeenketho zokwenza ngokwezifisoI-Silicon Carbide Epitaxy, ukuvumela izisombululo ezilungiselelweyo ezihlangabezana neemfuno ezithile zesixhobo. Kungakhathaliseki ukuba uphando okanye imveliso enkulu, iileya zethu ze-epitaxial zenzelwe ukuxhasa isizukulwana esilandelayo se-semiconductor innovations, eyenza uphuhliso lwezixhobo zombane ezinamandla ngakumbi, ezisebenzayo, nezithembekileyo.
Ngokudibanisa itekhnoloji yokusika kunye neenkqubo ezingqongqo zolawulo lomgangatho, iSemicera iqinisekisa ukuba yethuI-Silicon Carbide Epitaxyiimveliso azihlangani kuphela kodwa zigqithise imigangatho yoshishino. Oku kuzibophelela ekugqweseni kwenza iileya zethu ze-epitaxial zibe sisiseko esifanelekileyo sezicelo eziphambili ze-semiconductor, zivula indlela yempumelelo kumbane we-elektroniki kunye ne-optoelectronics.
Izinto | Imveliso | Uphando | Dummy |
Iiparamitha zeCrystal | |||
Iipolytype | 4H | ||
Imposiso yokuma kumphezulu | <11-20>4±0.15° | ||
Iiparamitha zoMbane | |||
I-Dopant | n-uhlobo lweNitrojeni | ||
Ukuxhathisa | 0.015-0.025ohm · cm | ||
Iiparamitha zoomatshini | |||
Ububanzi | 150.0±0.2mm | ||
Ukutyeba | 350±25 μm | ||
Ukuqhelaniswa neflethi ephambili | [1-100] ± 5 ° | ||
Ubude beflethi bokuqala | 47.5±1.5mm | ||
Iflethi yesibini | Akukho nanye | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
Ukuqubuda | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
Ngaphambili(Si-face) uburhabaxa(AFM) | Ra≤0.2nm (5μm*5μm) | ||
Ulwakhiwo | |||
Ukuxinana kweMibhobho | <1 iya/cm2 | <10 i/cm2 | <15 i/cm2 |
Ukungcola kwesinyithi | ≤5E10athom/cm2 | NA | |
I-BPD | ≤1500 i-ea/cm2 | ≤3000 nge-cm2 | NA |
TSD | ≤500 i/cm2 | ≤1000 nge-cm2 | NA |
Umgangatho wangaphambili | |||
Ngaphambili | Si | ||
Ukugqitywa komphezulu | Si-ubuso CMP | ||
Amacandelo | ≤60ea/wafer (ubukhulu≥0.3μm) | NA | |
Imikrwelo | ≤5ea/mm. Ubude obongezelekayo ≤Ububanzi | Ubude obongezelekayo≤2*Ububanzi | NA |
Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko | Akukho nanye | NA | |
Iitshiphusi ze-Edge/i-idents/fracture/hex plates | Akukho nanye | ||
Iindawo zePolytype | Akukho nanye | Indawo eyongezelekayo≤20% | Indawo eyongezelekayo≤30% |
Ukumakishwa kwelaser yangaphambili | Akukho nanye | ||
Umgangatho wasemva | |||
Emva kokugqiba | C-ubuso CMP | ||
Imikrwelo | ≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi | NA | |
Iziphene zangasemva (iitshiphusi zomphetho/iindindi) | Akukho nanye | ||
Umqolo uburhabaxa | Ra≤0.2nm (5μm*5μm) | ||
Ukumakishwa kwelaser yangasemva | 1 mm (ukusuka kumphetho ophezulu) | ||
Edge | |||
Edge | Chamfer | ||
Ukupakishwa | |||
Ukupakishwa | I-Epi ilungele ukupakishwa kwevacuum Ukupakishwa kweekhasethi ezininzi | ||
*Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD. |