Ityhubhu ye-silicon carbide ceramic inozinzo oluphezulu lobushushu kwaye inokugcina ubume bayo kunye nokusebenza kwindawo yobushushu obuphezulu kakhulu. Iyakwazi ukumelana nobushushu obuphezulu ukuya kuthi ga kumawaka edigri zeCelsius, ngoko inoluhlu olubanzi lokusetyenziswa kwizicelo zobushushu obuphezulu. Ukongeza, ityhubhu ye-silicon carbide ceramic nayo inokuqhuba kakuhle kwe-thermal kwaye inokuqhuba ngokufanelekileyo ubushushu, iyenza idlale indima ebalulekileyo kwintsimi yolawulo lwe-thermal kunye nokuchithwa kobushushu.
I-silicon carbide ityhubhu ye-ceramic ikwabonisa uzinzo olugqwesileyo lweekhemikhali kunye nokumelana nokubola. Inokumelana kakuhle nama-acids amaninzi, i-alkali kunye nezinye iikhemikhali, okwenza ukuba isetyenziswe ngokubanzi kwiinkqubo zemichiza, iindawo ezinobungozi kunye nonyango lwe-acid-base. Ukongeza, ityhubhu ye-silicon carbide ceramic nayo ine-coefficient ephantsi yokwandiswa kwe-thermal, eyenza ukuba igcine uzinzo oluhle xa ubushushu buguquka.
Ityhubhu ye-silicon carbide ceramic inoluhlu olubanzi lwezicelo kumashishini amaninzi. Kwiindawo zokushisa eziphezulu, izixhobo zokunyanga ukushisa kunye nezitshisi, i-silicon carbide ityhubhu ye-ceramic ingasetyenziswa njengendawo yangaphakathi yesithando somlilo, izinto eziphikisayo kunye nezixhobo zokufakelwa kwe-thermal. Kwishishini lemichiza, lingasetyenziselwa imibhobho, ii-reactors kunye neetanki zokugcina kumajelo atshabalalisayo. Ukongeza, ityhubhu ye-silicon carbide ceramic isetyenziswa ngokubanzi kwimveliso ye-semiconductor, ishishini lelanga, izixhobo zombane kunye ne-aerospace.
Ubume kunye nobukhulu bunokwenziwa ngokweemfuno
Ukuqina okuphezulu kakhulu(HV10): 22.2(Gpa)
Uxinzelelo oluphantsi kakhulu (3.10-3.20 g/cm³)
Kwiqondo lobushushu ukuya kuthi ga kwi-1400 ℃, iSiC inokugcina amandla ayo
Ngenxa yokuzinza kweekhemikhali kunye nomzimba, i-SiC inobunzima obuphezulu kunye nokumelana nokubola.
