I-silicon carbide cantilever paddle

Inkcazelo emfutshane:

I-silicon carbide paddle, eyaziwa ngokuba yi-silicon carbide cantilever paddle, i-silicon carbide cantilever beam luhlobo lwemveliso ye-silicon carbide ceramic emva kwe-1850.℃ubushushu obuphezulu bokushisa, kodwa ubushushu obuphezulu bokutshisa isilicon carbide ceramic yimveliso ekhethekileyo yeseramikhi, ngamasuntswana amahle.α-I-SiC kunye nezongezo zicinezelwe kwindawo engenanto, ekudibaneni ne-silicon engamanzi kwiqondo lokushisa eliphezulu, ikhabhoni kwindawo engenanto kunye nokungeniswa kwe-Si reaction, ukubunjwaβ-SiC,Kwaye idibaniswe ne-α-SiC, i-silicon yamahhala yazalisa i-porosity, ukuze ifumane izinto ze-ceramic ezixinzelelekileyo; Ineempawu eziphezulu ezahlukeneyo zeekeramics zamashishini.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-SiC Cantilever paddleisetyenziswa kwiziko lokugquma losasazo lweshishini le-photovoltaic lokwaleka ii-monocrystalline kunye ne-polycrystalline silicon wafers. Uphawu lwayo luyenza ikwazi ukumelana nobushushu obuphezulu kunye nomhlwa, nto leyo eyinika ubomi obude.
II-SiC Cantilever paddleihambisa izikhephe ze-SiC / izikhephe zequartz ezithwala ii-wafers zesilicon kwiqondo lobushushu obuphezulu lobushushu bokutyabeka ityhubhu yesithando somlilo.
Ubude bethuI-SiC Cantilever paddleukusuka kwi-1,500 ukuya kwi-3,500 mm.I-SiC Cantilever paddle'subungakanani bungenziwa ngokweenkcukacha zomthengi.

Iimpawu ezibonakalayo zeRecrystallized Silicon Carbide
Ipropati	Ixabiso eliqhelekileyo
Ubushushu bokusebenza (°C)	1600°C (neoksijini), 1700°C (ukunciphisa okusingqongileyo)
Umxholo weSiC	> 99.96%
Isiqulatho sasimahla Si	< 0.1%
Unizi lolwapho kuyiwa khona	2.60-2.70 g / cm³
I-porosity ebonakalayo	< 16%
Amandla oxinzelelo	> 600 MPa
Amandla okugoba okubandayo	80-90 MPa (20°C)
Amandla okugoba ashushu	90-100 MPa (1400°C)
Ukwandiswa kweThermal @1500°C	4.70 10^-6/°C
I-Thermal conductivity @1200°C	23 W/m•K
Imodyuli ye-elastic	240 GPA
Ukuxhathisa ukothuka kwe-Thermal	Ulunge kakhulu