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Wafer
I-SiC Substrate

Iindidi

CVD SiC Coating
I-CVD TaC Coating
Itekhnoloji yonyango lomphezulu
I-Silicon Carbide Ceramic
Semiconductor Quartz
IiMveliso zeGrafite zeSemiconductor
- Igraphite yeSilicone
- I-Isostatic Graphite Components
I-Carbon Fiber
Wafer
Iimveliso ezininzi ze-ceramic

Iveliso ezifakiwe

ITantalum Carbide TaC CVD Coating Custom Parts
Tantalum Carbide Coated Ring
Ukuchaneka okuphezulu kweSiC ye-ceramic effector
I-silicon carbide cantilever paddle
Ubomi benkonzo ende yeSiC efakwe kwiGraphite Carrier ye...
ISilicon Carbide Coated Tool Graphite , yeEpitaxy C...
Anti-oxidation ukucoceka okuphezulu SiC coated MOCVD itreyi
Ulwakhiwo lwe-SiC Coating Barrel ye-Barel Susceptor
ISemiconductor yeSiqingatha seSibini izahlulo ze-Epitaxial

I-SiC Substrate

6 lnch n-uhlobo sic substrate
2 ~ 6 intshi 4 ° off-engile P-uhlobo 4H-SiC substrate
4″ 6″ 8″ IiSubstrate eziqhubayo kunye neSemi-insulating
4″ 6″ iSemi-Insulating SiC Substrate
I-8lnch n-uhlobo lwe-Conductive SiC Substrate
4″ 6″ Ucoceko oluPhezulu lweSemi-Insulating SiC Ingot
4″6″ 8″ N-uhlobo lweSiC Ingot
6 Intshi N-uhlobo SiC Wafer
I-P-uhlobo lwe-SiC Substrate Wafer
8 Intshi N-uhlobo SiC Wafer
I-4 Intshi ye-N-uhlobo lwe-SiC Substrate
I-6 Intshi yeSemi-Insulating ye-HPSI SiC Wafer

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