I-SiC Coating yeGraphite Wafer Susceptor

Inkcazelo emfutshane:

ISemicera Semiconductor's SiC Coating yeGraphite Wafer Susceptor ihambisa ukusebenza okuphezulu kwe-thermal kunye nokuqina kokusetyenzwa kwe-wafer. Thembela kwi-Semicera ye-SiC-coated susceptors ephuculweyo eyilelwe ukuphucula ukusebenza kakuhle kunye nokuthembeka kwizicelo ze-semiconductor.

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Inkcazo

I-Semicorex's SiC Wafer Susceptors ye-MOCVD (i-Metal-Organic Chemical Vapor Deposition) zenziwe ngobunjineli ukuhlangabezana neemfuno ezichanekileyo zeenkqubo zokubeka i-epitaxial. Ukusebenzisa umgangatho ophezulu we-Silicon Carbide (i-SiC), ezi zixhasi zinika ukuqina okungenakulinganiswa kunye nokusebenza kwindawo yokushisa ephezulu kunye ne-corrosion, iqinisekisa ukukhula okuchanekileyo kunye nokusebenzayo kwezixhobo ze-semiconductor.

Ezona mpawu:

1. IiPropati zeMathiriyeli eziPhezuluYakhelwe kwi-SiC yomgangatho ophezulu, ii-wafer susceptivity zethu zibonisa i-thermal conductivity ekhethekileyo kunye nokumelana neekhemikhali. Ezi zakhiwo zibenza bakwazi ukujamelana neemeko ezinzima zeenkqubo ze-MOCVD, kubandakanywa ukushisa okuphezulu kunye neegesi ezinobungozi, ukuqinisekisa ixesha elide kunye nokusebenza okuthembekileyo.

2. Ukuchaneka kwi-Epitaxial DepositionUbunjineli obuchanekileyo be-SiC Wafer Susceptors yethu iqinisekisa ukuhanjiswa kobushushu obufanayo kuwo wonke umphezulu we-wafer, iququzelela ukukhula okungaguqukiyo kunye nomgangatho ophezulu we-epitaxial layer. Oku kuchanekileyo kubalulekile ekuveliseni i-semiconductors eneempawu zombane ezifanelekileyo.

3. Ukomelezwa koKuhlala ixesha elideIzinto eziqinileyo ze-SiC zibonelela ngokugqwesa ukuxhathisa ukunxitywa kunye nokuthotywa, naphantsi kokuvezwa ngokuqhubekayo kwiimeko zenkqubo enzima. Oku kuqina kunciphisa ukuphindaphinda kokutshintshwa kwe-susceptor, ukunciphisa ixesha lokuphumla kunye neendleko zokusebenza.