Inkcazo
CVD-SiC ukutyabekaineempawu zesakhiwo esifanayo, i-compact material, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ukucoceka okuphezulu, ukuxhathisa kwe-asidi kunye ne-alkali kunye ne-reagent ye-organic, eneempawu ezizinzileyo zomzimba kunye neekhemikhali.
Xa kuthelekiswa nezinto ezicocekileyo zegraphite, i-graphite iqala i-oxidize kwi-400C, eya kubangela ukulahleka kwepowder ngenxa ye-oxidation, okubangelwa ukungcoliseka kwendalo kwizixhobo ze-peripheral kunye namagumbi okucoca, kunye nokwandisa ukungcola kokusingqongileyo okuphezulu.
Nangona kunjalo,Ukwaleka kweSiCinokugcina uzinzo lomzimba kunye neekhemikhali kwii-degrees ze-1600, Isetyenziswa ngokubanzi kumashishini anamhlanje, ngakumbi kwishishini le-semiconductor.

Iimpawu eziphambili
1 .Ukucoceka okuphezulu kwe-SiC egqunywe igraphite
2. Ukumelana nobushushu obuphezulu kunye nokufana kwe-thermal
3. KulungileI-SiC icwecwe ngekristalekwindawo egudileyo
4. Ukuqina okuphezulu ngokuchasene nokucocwa kweekhemikhali
IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:
| SiC-CVD | ||
| Ukuxinana | (g/cc) | 3.21 |
| Amandla e-Flexural | (Mpa) | 470 |
| Ukwandiswa kweThermal | (10-6/K) | 4 |
| I-Thermal conductivity | (W/mK) | 300 |
Ukupakisha kunye nokuThumela
Ukubonelela ngezakhono:
10000 Iqhekeza/Amaqhekeza ngenyanga
UkuPakisha kunye nokuhanjiswa:
Ukupakisha:Ukupakisha okuMgangatho & okuqinileyo
Ingxowa yePoly + Ibhokisi + Ikhathoni + Ipalethi
Izibuko:
Ningbo/Shenzhen/Shanghai
Ixesha lokukhokhela:
| Ubuninzi (Amaqhekeza) | 1 - 1000 | >1000 |
| Est. Ixesha(iintsuku) | 30 | Kuza kuthethathethwana |






