Inkcazo
CVD-SiC ukutyabekaineempawu zesakhiwo esifanayo, i-compact material, ukumelana nobushushu obuphezulu, ukumelana ne-oxidation, ukucoceka okuphezulu, ukuxhathisa kwe-asidi kunye ne-alkali kunye ne-reagent ye-organic, eneempawu ezizinzileyo zomzimba kunye neekhemikhali.
Xa kuthelekiswa nezinto ezicocekileyo zegraphite, i-graphite iqala i-oxidize kwi-400C, eya kubangela ukulahleka kwepowder ngenxa ye-oxidation, okubangelwa ukungcoliseka kwendalo kwizixhobo ze-peripheral kunye namagumbi okucoca, kunye nokwandisa ukungcola kokusingqongileyo okuphezulu.
Nangona kunjalo,Ukwaleka kweSiCinokugcina uzinzo lomzimba kunye neekhemikhali kwii-degrees ze-1600, Isetyenziswa ngokubanzi kumashishini anamhlanje, ngakumbi kwishishini le-semiconductor.
Iimpawu eziphambili
1 .Ukucoceka okuphezulu kwe-SiC egqunywe igraphite
2. Ukumelana nobushushu obuphezulu kunye nokufana kwe-thermal
3. KulungileI-SiC icwecwe ngekristalekwindawo egudileyo
4. Ukuqina okuphezulu ngokuchasene nokucocwa kweekhemikhali
IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:
SiC-CVD | ||
Ukuxinana | (g/cc) | 3.21 |
Amandla e-Flexural | (Mpa) | 470 |
Ukwandiswa kweThermal | (10-6/K) | 4 |
I-Thermal conductivity | (W/mK) | 300 |
Ukupakisha kunye nokuThumela
Ubunakho bokubonelela:
10000 Iqhekeza/Amaqhekeza ngenyanga
UkuPakisha kunye nokuhanjiswa:
Ukupakisha:Ukupakisha okuMgangatho & okuqinileyo
Ingxowa yePoly + Ibhokisi + Ikhathoni + Iphalethi
Izibuko:
Ningbo/Shenzhen/Shanghai
Ixesha lokukhokhela:
Ubuninzi (Amaqhekeza) | 1 - 1000 | >1000 |
Est. Ixesha(iintsuku) | 30 | Kuza kuthethathethwana |