I-SiC egqunywe ngesifudumezi segraphite ye-MOCVD K465i, i-epitaxial graphite heater yezixhobo zesemiconductor

Inkcazelo emfutshane:

I-Semicera Semiconductor ngumboneleli okhokelayo okhethekileyo kwi-wafer kunye nezinto ezisetyenziswayo ze-semiconductor eziphambili. Sizinikezele ekunikezeni umgangatho ophezulu, othembekileyo, kunye neemveliso ezintsha kwimveliso ye-semiconductor, imboni ye-photovoltaic kunye nezinye iindawo ezinxulumene nazo.

Umgca wethu wemveliso uquka i-SiC/TaC egqunywe ngeemveliso zegraphite kunye neemveliso ze-ceramic, ezibandakanya izinto ezahlukeneyo ezifana ne-silicon carbide, i-silicon nitride, kunye ne-aluminium oxide kunye nokunye.

Njengomthengisi othembekileyo, siyakuqonda ukubaluleka kwezinto ezisetyenziswayo kwinkqubo yokwenziwa kwemveliso, kwaye sizimisele ukuhambisa iimveliso ezihlangabezana nemigangatho ephezulu yomgangatho wokuzalisekisa iimfuno zabathengi bethu.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iimpawu eziphambili zesifudumezi segraphite:

1. ukufana kwesakhiwo sokufudumala.

2. Ukuqhuba kakuhle kombane kunye nomthwalo ophezulu wombane.

3. ukumelana nomhlwa.

4. i-inoxidizability.

5. ukucoceka kweekhemikhali eziphezulu.

6. amandla aphezulu oomatshini.

Inzuzo inamandla okusebenza, ixabiso eliphezulu kunye nokugcinwa okuphantsi. Sinokuvelisa i-anti-oxidation kunye nobomi obude be-graphite crucible, i-graphite mold kunye nazo zonke iindawo zesifudumezi segraphite.

Iiparamitha eziphambili zesifudumezi segraphite

Inkcazo yobuGcisa	IVET-M3
Ubuninzi Bobuninzi (g/cm3)	≥1.85
Umxholo wothuthu (PPM)	≤500
Ukuqina konxweme	≥45
Ukuchasa okuKhethekileyo (μ.Ω.m)	≤12
Amandla e-Flexural (Mpa)	≥40
Amandla acinezelayo (Mpa)	≥70
Max. Ubungakanani bozinkozo (μm)	≤43
I-Coefficient yoKwandiswa kweThermal Mm/°C	≤4.4 * 10-6