Inkcazo
Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC.
Iimpawu eziphambili
1. Ukumelana nobushushu obuphezulu be-oxidation:
Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.
2. Ukucoceka okuphezulu : yenziwe yi-chemical vapor deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.
3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.
4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye nee-reagents eziphilayo.
IiNgcaciso eziphambili ze-CVD-SIC Coating
| Iipropati zeSiC-CVD | ||
| Ulwakhiwo lweCrystal | FCC isigaba β | |
| Ukuxinana | g/cm ³ | 3.21 |
| Ukuqina | Vickers ubulukhuni | 2500 |
| Ubungakanani benkozo | μm | 2~10 |
| Ucoceko lweMichiza | % | 99.99995 |
| Ubushushu Umthamo | J·kg-1 ·K-1 | 640 |
| Ubushushu bokunciphisa | ℃ | 2700 |
| Amandla eFelexural | MPa (RT 4-point) | 415 |
| Imodulus eselula | I-Gpa (4pt bend, 1300℃) | 430 |
| Ukwandiswa kweThermal (CTE) | 10-6K-1 | 4.5 |
| I-Thermal conductivity | (W/mK) | 300 |
