Inkcazo
I-Semicera GaN Epitaxy Carrier iyilwe ngobuchule ukuhlangabezana neemfuno ezingqongqo zokwenziwa kwe-semiconductor yanamhlanje. Ngesiseko sezinto ezikumgangatho ophezulu kunye nobunjineli obuchanekileyo, lo mphathiswa ubalaseleyo ngenxa yokusebenza kwayo okungaqhelekanga kunye nokuthembeka. Ukuhlanganiswa kwe-Chemical Vapor Deposition (CVD) i-Silicon Carbide (SiC) yokugqoka iqinisekisa ukuqina okuphezulu, ukusebenza kakuhle kwe-thermal, kunye nokukhuselwa, okwenza kube yinto ekhethwayo kwiingcali zoshishino.
Ezona mpawu
1. UkuZinziseka okuKhethekileyoI-CVD SiC yokugqoka kwi-GaN Epitaxy Carrier iphakamisa ukuchasana kwayo ukuguga kunye nokukrazula, ukwandisa kakhulu ubomi bayo bokusebenza. Oku komelela kuqinisekisa ukusebenza okungaguqukiyo nakwiindawo zokuvelisa ezifunayo, ukunciphisa imfuno yokutshintshwa rhoqo kunye nokugcinwa.
2. UFanelo oluPhezulu lweThermalUlawulo lwe-Thermal lubalulekile kwimveliso ye-semiconductor. I-GaN Epitaxy Carrier ye-Thermal properties iququzelela ukutshatyalaliswa kobushushu ngokufanelekileyo, ukugcina iimeko ezifanelekileyo zokushisa ngexesha lenkqubo yokukhula kwe-epitaxial. Oku kusebenza kakuhle akuphuculi kuphela umgangatho wee-wafers ze-semiconductor kodwa konyusa ukusebenza kakuhle kwemveliso ngokubanzi.
3. Izakhono zoKhuselekoI-coating ye-SiC inika ukhuseleko oluqinileyo kwi-corrosion yekhemikhali kunye ne-thermal shocks. Oku kuqinisekisa ukuba intembeko yomthwali iyagcinwa kuyo yonke inkqubo yokwenziwa, ukukhusela imathiriyeli ethambileyo ye-semiconductor kunye nokuphucula isivuno esipheleleyo kunye nokuthembeka kwenkqubo yokwenziwa.
IiNgcaciso zobuGcisa :
izicelo:
I-Semicorex GaN Epitaxy Carrier ilungile kwiinkqubo ezahlukeneyo zokwenziwa kwe-semiconductor, kubandakanya:
• Ukukhula kwe-GaN epitaxial
• Iinkqubo zesemiconductor yobushushu obuphezulu
• Ukubekwa kweMichiza yoMphunga (CVD)
• Ezinye izicelo eziphuhlileyo zokwenziwa kwe-semiconductor