Si substrate

Inkcazelo emfutshane:

Ngokuchaneka kwayo okuphezulu kunye nokucoceka okuphezulu, i-Semicera's Si Substrate iqinisekisa ukusebenza okuthembekileyo nokungaguqukiyo kwizicelo ezibalulekileyo, kuquka i-Epi-Wafer kunye ne-Gallium Oxide (Ga2O3) yokuvelisa. Yenzelwe ukuxhasa imveliso ye-microelectronics ephucukileyo, le substrate ibonelela ngokuhambelana okukhethekileyo kunye nozinzo, iyenza ibe sisixhobo esibalulekileyo kubuchwepheshe obuphambili kwezonxibelelwano, iimoto kunye namacandelo oshishino.


Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Si Substrate yi-Semicera yinxalenye ebalulekileyo kwimveliso yezixhobo eziphezulu ze-semiconductor. Eyenziwe nge-Silicon ecocekileyo ephezulu (Si), le substrate inikezela ngokufana okungaqhelekanga, uzinzo, kunye nokuhanjiswa okugqwesileyo, okwenza ukuba ilungele uluhlu olubanzi lwezicelo eziphambili kwishishini le-semiconductor. Nokuba isetyenziswa kwi-Si Wafer, i-SiC Substrate, i-SOI Wafer, okanye i-SiN Substrate yemveliso, i-Semicera Si Substrate ihambisa umgangatho ongaguqukiyo kunye nokusebenza okuphezulu ukuhlangabezana neemfuno ezikhulayo ze-electronics zanamhlanje kunye nesayensi yezixhobo.

UkuSebenza okungahambelaniyo kunye nobunyulu obuPhezulu kunye nokuchaneka

I-Semicera's Si Substrate yenziwe kusetyenziswa iinkqubo eziphucukileyo eziqinisekisa ubunyulu obuphezulu kunye nolawulo oluluqilima lomgangatho. I-substrate isebenza njengesiseko sokuveliswa kwezinto ezahlukeneyo eziphezulu zokusebenza, kuquka i-Epi-Wafers kunye ne-AlN Wafers. Ukuchaneka kunye nokufana kwe-Si Substrate kwenza kube lukhetho oluhle kakhulu lokudala i-epitaxial layers yefilimu encinci kunye nezinye izinto ezibalulekileyo ezisetyenziselwa ukuveliswa kwee-semiconductors zesizukulwana esilandelayo. Nokuba usebenza neGallium Oxide (Ga2O3) okanye ezinye izinto eziphambili, iSemicera's Si Substrate iqinisekisa awona manqanaba aphezulu okuthembeka nokusebenza.

Izicelo kwiSemiconductor Manufacturing

Kwishishini le-semiconductor, i-Si Substrate evela kwi-Semicera isetyenziswa kwizicelo ezininzi, ezibandakanya i-Si Wafer kunye ne-SiC Substrate yemveliso, apho ibonelela ngesiseko esizinzileyo, esithembekileyo sokubekwa kweeleya ezisebenzayo. I-substrate idlala indima ebalulekileyo ekwenzeni ii-SOI Wafers (i-Silicon kwi-Insulator), eziyimfuneko kwii-microelectronics eziphambili kunye neesekethe ezidibeneyo. Ngaphaya koko, ii-Epi-Wafers (i-epitaxial wafers) ezakhelwe kwii-Si Substrates zibalulekile ekuveliseni izixhobo ze-semiconductor ezisebenza ngokuphezulu ezifana neetransistors zamandla, iidiode, kunye neesekethe ezidibeneyo.

I-Si Substrate ikwaxhasa ukwenziwa kwezixhobo ezisebenzisa i-Gallium Oxide (Ga2O3), isixhobo esithembisayo se-bandap ebanzi esetyenziselwa ukusetyenziswa kwamandla aphezulu kumbane wamandla. Ukongeza, ukuhambelana kweSemicera's Si Substrate kunye ne-AlN Wafers kunye nezinye ii-substrates eziphambili ziqinisekisa ukuba ziyakwazi ukuhlangabezana neemfuno ezahlukeneyo zamashishini aphezulu, okwenza kube sisisombululo esifanelekileyo sokuveliswa kwezixhobo ezinqamlekileyo kunxibelelwano lomnxeba, izithuthi, kunye namacandelo oshishino. .

Umgangatho othembekileyo kunye noQinisekileyo kwizicelo zobuGcisa obuPhezulu

I-Si Substrate yi-Semicera yenziwe ngobunono ukuze ihlangabezane neemfuno eziqatha zokwenziwa kwe-semiconductor. Ubume bayo obukhethekileyo besakhiwo kunye neempawu eziphezulu zomgangatho ophezulu zenza ukuba kube yinto efanelekileyo yokusetyenziswa kwiinkqubo zekhasethi zothutho lwe-wafer, kunye nokudala iileya ezichanekileyo eziphezulu kwizixhobo ze-semiconductor. Ikhono le-substrate lokugcina umgangatho ohambelanayo phantsi kweemeko zenkqubo ezahlukeneyo ziqinisekisa iziphene ezincinci, ukuphucula isivuno kunye nokusebenza kwemveliso yokugqibela.

Ngokusebenza kwayo okuphezulu kwe-thermal, amandla omatshini, kunye nokucoceka okuphezulu, i-Semicera's Si Substrate yinto ekhethwa ngabavelisi abafuna ukufikelela kwimigangatho ephezulu yokuchaneka, ukuthembeka, kunye nokusebenza kwimveliso ye-semiconductor.

Khetha i-Semicera's Si Substrate ye-High-Purity, i-High-Performance Solutions

Kubavelisi kwishishini le-semiconductor, i-Si Substrate evela kwi-Semicera inikezela ngesisombululo esomeleleyo, esikumgangatho ophezulu kuluhlu olubanzi lwezicelo, ukusuka kwimveliso yeSi Wafer ukuya ekudalweni kwe-Epi-Wafers kunye ne-SOI Wafers. Ngokucoceka okungenakulinganiswa, ukuchaneka, kunye nokuthembeka, le substrate yenza ukuveliswa kwezixhobo ze-semiconductor zokusika, ukuqinisekisa ukusebenza kwexesha elide kunye nokusebenza kakuhle. Khetha iSemicera kwiimfuno zakho ze-Si, kwaye uthembele kwimveliso eyenzelwe ukuhlangabezana neemfuno zetekhnoloji yangomso.

Izinto

Imveliso

Uphando

Dummy

Iiparamitha zeCrystal

Iipolytype

4H

Imposiso yokuma kumphezulu

<11-20>4±0.15°

Iiparamitha zoMbane

I-Dopant

n-uhlobo lweNitrojeni

Ukuxhathisa

0.015-0.025ohm · cm

Iiparamitha zoomatshini

Ububanzi

150.0±0.2mm

Ukutyeba

350±25 μm

Ukuqhelaniswa neflethi ephambili

[1-100] ± 5 °

Ubude beflethi bokuqala

47.5±1.5mm

Iflethi yesibini

Akukho nanye

TTV

≤5 μm

≤10 μm

≤15 μm

LTV

≤3 μm(5mm*5mm)

≤5 μm(5mm*5mm)

≤10 μm(5mm*5mm)

Ukuqubuda

-15μm ~ 15μm

-35μm ~ 35μm

-45μm ~ 45μm

I-Wap

≤35 μm

≤45 μm

≤55 μm

Ngaphambili(Si-face) uburhabaxa(AFM)

Ra≤0.2nm (5μm*5μm)

Ulwakhiwo

Ukuxinana kweMibhobho

<1 iya/cm2

<10 i/cm2

<15 i/cm2

Ukungcola kwesinyithi

≤5E10athom/cm2

NA

I-BPD

≤1500 i-ea/cm2

≤3000 nge-cm2

NA

TSD

≤500 i/cm2

≤1000 nge-cm2

NA

Umgangatho wangaphambili

Ngaphambili

Si

Ukugqitywa komphezulu

Si-ubuso CMP

Amacandelo

≤60ea/wafer (ubukhulu≥0.3μm)

NA

Imikrwelo

≤5ea/mm. Ubude obongezelekayo ≤Ububanzi

Ubude obongezelekayo≤2*Ububanzi

NA

Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko

Akukho nanye

NA

Iitshiphusi ze-Edge/i-idents/fracture/hex plates

Akukho nanye

Iindawo zePolytype

Akukho nanye

Indawo eyongezelekayo≤20%

Indawo eyongezelekayo≤30%

Ukumakishwa kwelaser yangaphambili

Akukho nanye

Umgangatho wasemva

Emva kokugqiba

C-ubuso CMP

Imikrwelo

≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi

NA

Iziphene zangasemva (iitshiphusi zomphetho/iindindi)

Akukho nanye

Umqolo uburhabaxa

Ra≤0.2nm (5μm*5μm)

Ukumakishwa kwelaser yangasemva

1 mm (ukusuka kumphetho ophezulu)

Edge

Edge

Chamfer

Ukupakishwa

Ukupakishwa

I-Epi ilungele ukupakishwa kwevacuum

Ukupakishwa kweekhasethi ezininzi

*Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD.

ubuchwephesha_1_2_ubungakanani
Iifafa zeSiC

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