I-Si Substrate yi-Semicera yinxalenye ebalulekileyo kwimveliso yezixhobo eziphezulu ze-semiconductor. Eyenziwe nge-Silicon ecocekileyo ephezulu (Si), le substrate inikezela ngokufana okungaqhelekanga, uzinzo, kunye nokuhanjiswa okugqwesileyo, okwenza ukuba ilungele uluhlu olubanzi lwezicelo eziphambili kwishishini le-semiconductor. Nokuba isetyenziswa kwi-Si Wafer, i-SiC Substrate, i-SOI Wafer, okanye i-SiN Substrate yemveliso, i-Semicera Si Substrate ihambisa umgangatho ongaguqukiyo kunye nokusebenza okuphezulu ukuhlangabezana neemfuno ezikhulayo ze-electronics zanamhlanje kunye nesayensi yezixhobo.
UkuSebenza okungahambelaniyo kunye nobunyulu obuPhezulu kunye nokuchaneka
I-Semicera's Si Substrate yenziwe kusetyenziswa iinkqubo eziphucukileyo eziqinisekisa ubunyulu obuphezulu kunye nolawulo oluluqilima lomgangatho. I-substrate isebenza njengesiseko sokuveliswa kwezinto ezahlukeneyo eziphezulu zokusebenza, kuquka i-Epi-Wafers kunye ne-AlN Wafers. Ukuchaneka kunye nokufana kwe-Si Substrate kwenza kube lukhetho oluhle kakhulu lokudala i-epitaxial layers yefilimu encinci kunye nezinye izinto ezibalulekileyo ezisetyenziselwa ukuveliswa kwee-semiconductors zesizukulwana esilandelayo. Nokuba usebenza neGallium Oxide (Ga2O3) okanye ezinye izinto eziphambili, iSemicera's Si Substrate iqinisekisa awona manqanaba aphezulu okuthembeka nokusebenza.
Izicelo kwiSemiconductor Manufacturing
Kwishishini le-semiconductor, i-Si Substrate evela kwi-Semicera isetyenziswa kwizicelo ezininzi, ezibandakanya i-Si Wafer kunye ne-SiC Substrate yemveliso, apho ibonelela ngesiseko esizinzileyo, esithembekileyo sokubekwa kweeleya ezisebenzayo. I-substrate idlala indima ebalulekileyo ekwenzeni ii-SOI Wafers (i-Silicon kwi-Insulator), eziyimfuneko kwii-microelectronics eziphambili kunye neesekethe ezidibeneyo. Ngaphaya koko, ii-Epi-Wafers (i-epitaxial wafers) ezakhelwe kwii-Si Substrates zibalulekile ekuveliseni izixhobo ze-semiconductor ezisebenza ngokuphezulu ezifana neetransistors zamandla, iidiode, kunye neesekethe ezidibeneyo.
I-Si Substrate ikwaxhasa ukwenziwa kwezixhobo ezisebenzisa i-Gallium Oxide (Ga2O3), isixhobo esithembisayo se-bandap ebanzi esetyenziselwa ukusetyenziswa kwamandla aphezulu kumbane wamandla. Ukongeza, ukuhambelana kweSemicera's Si Substrate kunye ne-AlN Wafers kunye nezinye ii-substrates eziphambili ziqinisekisa ukuba ziyakwazi ukuhlangabezana neemfuno ezahlukeneyo zamashishini aphezulu, okwenza kube sisisombululo esifanelekileyo sokuveliswa kwezixhobo ezinqamlekileyo kunxibelelwano lomnxeba, izithuthi, kunye namacandelo oshishino. .
Umgangatho othembekileyo kunye noQinisekileyo kwizicelo zobuGcisa obuPhezulu
I-Si Substrate yi-Semicera yenziwe ngobunono ukuze ihlangabezane neemfuno eziqatha zokwenziwa kwe-semiconductor. Ubume bayo obukhethekileyo besakhiwo kunye neempawu eziphezulu zomgangatho ophezulu zenza ukuba kube yinto efanelekileyo yokusetyenziswa kwiinkqubo zekhasethi zothutho lwe-wafer, kunye nokudala iileya ezichanekileyo eziphezulu kwizixhobo ze-semiconductor. Ikhono le-substrate lokugcina umgangatho ohambelanayo phantsi kweemeko zenkqubo ezahlukeneyo ziqinisekisa iziphene ezincinci, ukuphucula isivuno kunye nokusebenza kwemveliso yokugqibela.
Ngokusebenza kwayo okuphezulu kwe-thermal, amandla omatshini, kunye nokucoceka okuphezulu, i-Semicera's Si Substrate yinto ekhethwa ngabavelisi abafuna ukufikelela kwimigangatho ephezulu yokuchaneka, ukuthembeka, kunye nokusebenza kwimveliso ye-semiconductor.
Khetha i-Semicera's Si Substrate ye-High-Purity, i-High-Performance Solutions
Kubavelisi kwishishini le-semiconductor, i-Si Substrate evela kwi-Semicera inikezela ngesisombululo esomeleleyo, esikumgangatho ophezulu kuluhlu olubanzi lwezicelo, ukusuka kwimveliso yeSi Wafer ukuya ekudalweni kwe-Epi-Wafers kunye ne-SOI Wafers. Ngokucoceka okungenakulinganiswa, ukuchaneka, kunye nokuthembeka, le substrate yenza ukuveliswa kwezixhobo ze-semiconductor zokusika, ukuqinisekisa ukusebenza kwexesha elide kunye nokusebenza kakuhle. Khetha iSemicera kwiimfuno zakho ze-Si, kwaye uthembele kwimveliso eyenzelwe ukuhlangabezana neemfuno zetekhnoloji yangomso.
Izinto | Imveliso | Uphando | Dummy |
Iiparamitha zeCrystal | |||
Iipolytype | 4H | ||
Imposiso yokuma kumphezulu | <11-20>4±0.15° | ||
Iiparamitha zoMbane | |||
I-Dopant | n-uhlobo lweNitrojeni | ||
Ukuxhathisa | 0.015-0.025ohm · cm | ||
Iiparamitha zoomatshini | |||
Ububanzi | 150.0±0.2mm | ||
Ukutyeba | 350±25 μm | ||
Ukuqhelaniswa neflethi ephambili | [1-100] ± 5 ° | ||
Ubude beflethi bokuqala | 47.5±1.5mm | ||
Iflethi yesibini | Akukho nanye | ||
TTV | ≤5 μm | ≤10 μm | ≤15 μm |
LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
Ukuqubuda | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
Ngaphambili(Si-face) uburhabaxa(AFM) | Ra≤0.2nm (5μm*5μm) | ||
Ulwakhiwo | |||
Ukuxinana kweMibhobho | <1 iya/cm2 | <10 i/cm2 | <15 i/cm2 |
Ukungcola kwesinyithi | ≤5E10athom/cm2 | NA | |
I-BPD | ≤1500 i-ea/cm2 | ≤3000 nge-cm2 | NA |
TSD | ≤500 i/cm2 | ≤1000 nge-cm2 | NA |
Umgangatho wangaphambili | |||
Ngaphambili | Si | ||
Ukugqitywa komphezulu | Si-ubuso CMP | ||
Amacandelo | ≤60ea/wafer (ubukhulu≥0.3μm) | NA | |
Imikrwelo | ≤5ea/mm. Ubude obongezelekayo ≤Ububanzi | Ubude obongezelekayo≤2*Ububanzi | NA |
Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko | Akukho nanye | NA | |
Iitshiphusi ze-Edge/i-idents/fracture/hex plates | Akukho nanye | ||
Iindawo zePolytype | Akukho nanye | Indawo eyongezelekayo≤20% | Indawo eyongezelekayo≤30% |
Ukumakishwa kwelaser yangaphambili | Akukho nanye | ||
Umgangatho wasemva | |||
Emva kokugqiba | C-ubuso CMP | ||
Imikrwelo | ≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi | NA | |
Iziphene zangasemva (iitshiphusi zomphetho/iindindi) | Akukho nanye | ||
Umqolo uburhabaxa | Ra≤0.2nm (5μm*5μm) | ||
Ukumakishwa kwelaser yangasemva | 1 mm (ukusuka kumphetho ophezulu) | ||
Edge | |||
Edge | Chamfer | ||
Ukupakishwa | |||
Ukupakishwa | I-Epi ilungele ukupakishwa kwevacuum Ukupakishwa kweekhasethi ezininzi | ||
*Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD. |