Semicerayazisa umgangatho wayo ophezuluYiyo Epitaxyiinkonzo, eziyilelwe ukuhlangabezana nemigangatho echanekileyo yoshishino lwanamhlanje lwesemiconductor. I-Epitaxial silicon layers ibaluleke kakhulu ekusebenzeni kunye nokuthembeka kwezixhobo zombane, kwaye izisombululo zethu ze-Si Epitaxy ziqinisekisa ukuba izixhobo zakho zifezekisa ukusebenza kakuhle.
Izaleko zeSilicon ezichanekileyo Semicerauyaqonda ukuba isiseko sezixhobo zokusebenza eziphezulu silele kumgangatho wezinto ezisetyenzisiweyo. YethuYiyo EpitaxyInkqubo ilawulwa ngobuchule ukuvelisa iileyili zesilicon ngokufana okukhethekileyo kunye nokuthembeka kwekristale. Ezi maleko ziyimfuneko kwizicelo ezisusela kwi-microelectronics ukuya kwizixhobo zamandla aphambili, apho ukuhambelana nokuthembeka kubaluleke kakhulu.
Ilungiselelwe ukuSebenza kweSixhoboIYiyo Epitaxyiinkonzo ezibonelelwa yiSemicera zilungiselelwe ukuphucula iimpawu zombane kwisixhobo sakho. Ngokukhulisa iileya zesilicon ezicoceke kakhulu ezinoxinzelelo oluphantsi, siqinisekisa ukuba izinto zakho zisebenza ngeyona ndlela ingcono, ngokuphuculwa kokushukumiseka komthuthi kunye nokunciphisa ukumelana nombane. Oku kulungiswa kubaluleke kakhulu ekufezekiseni isantya esiphezulu kunye neempawu eziphezulu ezifunwa bubuchwepheshe bale mihla.
Ukuguquguquka kwizicelo Semicera'sYiyo Epitaxyilungele uluhlu olubanzi lwezicelo, kubandakanywa ukuveliswa kwee-transistors ze-CMOS, ii-MOSFET zamandla, kunye ne-bipolar junction transistors. Inkqubo yethu ebhetyebhetye ivumela uhlengahlengiso olusekwe kwiimfuno ezithile zeprojekthi yakho, nokuba ufuna iileya ezicekethekileyo zosetyenziso lwefrikhwensi ephezulu okanye iileya ezishinyeneyo zezixhobo zamandla.
Umgangatho weMaterial oPhezuluUmgangatho usentliziyweni yayo yonke into esiyenzayo eSemicera. YethuYiyo EpitaxyInkqubo isebenzisa izixhobo zanamhlanje kunye nobuchule bokuqinisekisa ukuba umaleko we-silicon nganye udibana nemigangatho ephezulu yococeko kunye nengqibelelo yesakhiwo. Le ngqalelo kwiinkcukacha kunciphisa ukwenzeka kweziphene ezinokuchaphazela ukusebenza kwesixhobo, okukhokelela kwizinto ezinokuthenjwa nezihlala ixesha elide.
Ukuzibophelela kwi-Innovation Semicerauzimisele ukuhlala phambili kwitekhnoloji ye-semiconductor. YethuYiyo Epitaxyiinkonzo zibonisa oku kuzibophelela, okubandakanya ukuqhubela phambili kwamva nje kubuchule bokukhula be-epitaxial. Sihlala sicokisa iinkqubo zethu ukuhambisa i-silicon ehlangabezana neemfuno eziguqukayo zeshishini, siqinisekisa ukuba iimveliso zakho zihlala zikhuphisana kwimarike.
Izisombululo ezilungiselelwe iimfuno zakhoUkuqonda ukuba yonke iprojekthi yahlukile,Semicerainikeza ezilungiselelweyoYiyo Epitaxyizisombululo zokuhambelana neemfuno zakho ezithile. Nokuba ufuna iiprofayili ezithile zedoping, ubukhulu bomaleko, okanye umphezulu ogqityiweyo, iqela lethu lisebenza ngokusondeleyo nawe ukuhambisa imveliso ehlangabezana neenkcukacha zakho ezichanekileyo.
| Izinto | Imveliso | Uphando | Dummy |
| Iiparamitha zeCrystal | |||
| Iipolytype | 4H | ||
| Imposiso yokuma kumphezulu | <11-20>4±0.15° | ||
| Iiparamitha zoMbane | |||
| I-Dopant | n-uhlobo lweNitrojeni | ||
| Ukuxhathisa | 0.015-0.025ohm · cm | ||
| IiParameters zoomatshini | |||
| Ububanzi | 150.0±0.2mm | ||
| Ukutyeba | 350±25 μm | ||
| Ukuqhelaniswa neflethi ephambili | [1-100] ± 5 ° | ||
| Ubude beflethi bokuqala | 47.5±1.5mm | ||
| Iflethi yesibini | Akukho nanye | ||
| TTV | ≤5 μm | ≤10 μm | ≤15 μm |
| LTV | ≤3 μm(5mm*5mm) | ≤5 μm(5mm*5mm) | ≤10 μm(5mm*5mm) |
| Ukuqubuda | -15μm ~ 15μm | -35μm ~ 35μm | -45μm ~ 45μm |
| I-Wap | ≤35 μm | ≤45 μm | ≤55 μm |
| Ngaphambili(Si-face) uburhabaxa(AFM) | Ra≤0.2nm (5μm*5μm) | ||
| Ulwakhiwo | |||
| Ukuxinana kweMibhobho | <1 iya/cm2 | <10 i/cm2 | <15 i/cm2 |
| Ukungcola kwesinyithi | ≤5E10athom/cm2 | NA | |
| I-BPD | ≤1500 i-ea/cm2 | ≤3000 i/cm2 | NA |
| TSD | ≤500 i/cm2 | ≤1000 nge-cm2 | NA |
| Umgangatho wangaphambili | |||
| Ngaphambili | Si | ||
| Ukugqitywa komphezulu | Si-ubuso CMP | ||
| Amacandelo | ≤60ea/wafer (ubukhulu≥0.3μm) | NA | |
| Imikrwelo | ≤5ea/mm. Ubude obongezelekayo ≤Ububanzi | Ubude obongezelekayo≤2*Ububanzi | NA |
| Amaxolo e-orenji/imingxuma/amabala/imivimbo/ iintanda/ungcoliseko | Akukho nanye | NA | |
| Iitshiphusi ze-Edge/i-idents/fracture/hex plates | Akukho nanye | ||
| Iindawo zePolytype | Akukho nanye | Indawo eyongezelekayo≤20% | Indawo eyongezelekayo≤30% |
| Ukumakishwa kwelaser yangaphambili | Akukho nanye | ||
| Umgangatho wasemva | |||
| Emva kokugqiba | C-ubuso CMP | ||
| Imikrwelo | ≤5ea/mm,Ubude obongezelekayo≤2*Ububanzi | NA | |
| Iziphene zangasemva (iitshiphusi zomphetho/iindents) | Akukho nanye | ||
| Umqolo uburhabaxa | Ra≤0.2nm (5μm*5μm) | ||
| Ukumakishwa kwelaser yangasemva | 1 mm (ukusuka kumphetho ophezulu) | ||
| Edge | |||
| Edge | Chamfer | ||
| Ukupakishwa | |||
| Ukupakishwa | I-Epi ilungele ukupakishwa kwevacuum Ukupakishwa kweekhasethi ezininzi | ||
| *Amanqaku: "NA" ithetha ukuba akukho sicelo Izinto ezingakhankanywanga zinokubhekisa kwi-SEMI-STD. | |||
