Semiconductor silicon carbide isikhephe esisicaba

Semiconductor silicon carbide wafer boat Featured Image

Inkcazelo emfutshane:

Iimveliso zecandelo le-Weitai SiC zinokuxhathisa okuphezulu kwe-oxidation, ukuzinza kweekhemikhali kunye nokumelana nobushushu, kunye neempawu ezibalaseleyo zozinzo nakwi-2000 degrees.Zisetyenziswa kakhulu kwizikhephe ezisicaba, iityhubhu kunye neewafers zokulinganisa ezithatha indawo ye-silicon yafers efunekayo kwinkqubo yokwenziwa kwemathiriyeli ye-semiconductor, kwaye zikwasetyenziswa ngokubanzi kwiimveliso zokulungisa ezisetyenziswa kumaqondo obushushu aphezulu.Isetyenziswa ngokubanzi kwizixhobo zokuvelisa i-semiconductor, intsimi yeemoto, intsimi yamandla kunye namanye amacandelo.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-Silicon carbide luhlobo olutsha lweekeramics ezinexabiso eliphezulu lokusebenza kunye neempawu ezintle zezinto eziphathekayo.Ngenxa yeempawu ezinje ngokuqina okuphezulu kunye nokuqina, ukumelana nobushushu obuphezulu, ukuguquguquka okukhulu kwe-thermal kunye nokuxhathisa ukubola kweekhemikhali, iSilicon Carbide inokumelana nayo yonke imichiza ephakathi.Ke ngoko, i-SiC isetyenziswa kakhulu kwimigodi yeoli, kwimichiza, koomatshini nakwindawo yomoya, nkqu amandla enyukliya kunye nomkhosi banemfuno zabo ezikhethekileyo kwi-SIC.Esinye isicelo esiqhelekileyo esinokusinika amakhonkco okutywina epompo, i-valve kunye nezixhobo zokukhusela njl.

Siyakwazi ukuyila kunye nokwenza ngokwemilinganiselo yakho ethile ngomgangatho olungileyo kunye nexesha lokuhambisa elifanelekileyo.

Aizinto eziluncedo:

Ukumelana ne-oxidation yobushushu obuphezulu

Uxhathiso olugqwesileyo lweCorrosion

Ukuxhathisa okulungileyo kweAbrasion

I-coefficient ephezulu yokushisa ukushisa
Ukuzithambisa, ukuxinana okuphantsi
Ukuqina okuphezulu
Uyilo olulungiselelweyo.

Usetyenziso:

-Indawo ekwaziyo ukumelana nokunxiba: ibhulorho, ipleyiti, umbhobho wesanti, umgca wenkanyamba, umphanda wokusila, njl.

-Umgangatho wobushushu obuphezulu: i-siC Slab, iTube yokuCima iFurnace, iTube eRadiant, i-crucible, i-Heating Element, i-Roller, i-Beam, i-Heat Exchanger, i-Cold Air Pipe, i-Burner Nozzle, i-Thermocouple Protection Tube, isikhephe se-SiC, i-Kiln car Structure, i-Setter, njl.

-Ibala leBulletproof yoMkhosi

-I-Silicon Carbide Semiconductor: Isikhephe se-SiC wafer, i-sic chuck, i-sic paddle, i-sic cassette, i-sic diffusion ityhubhu, i-wafer fork, ipleyiti yokufunxa, isikhokelo, njl.

-I-Silicon Carbide Seal Field: zonke iintlobo zeringi yokutywina, ukuthwala, i-bushing, njl.

-I-Photovoltaic Field: I-Cantilever Paddle, i-Barrel yokugaya, i-Silicon Carbide Roller, njl.

-Indawo yebhetri yeLithium

Iiparamitha zobuGcisa:

I-datasheet yezinto eziphathekayo

材料Izinto eziphathekayo	R-SiC
使用温度Ubushushu bokusebenza (°C)	1600°C (ILogo Simahla Akukho mlinganiselo Ipapashwe ngu- 氧化气氛Ubume beOxidizing) 1700°C (还原气氛Ukunciphisa okusingqongileyo)
SiC含量Umxholo weSiC (%)	> 99
自由Si含量Umxholo wesi Si samahala (%)	< 0.1
体积密度Ubuninzi bobuninzi (g/cm3)	2.60-2.70
气孔率I-porosity ebonakalayo (%)	<16
抗压强度Amandla okutyumza (MPa)	> 600
常温抗弯强度Amandla okugoba abandayo (MPa)	80-90 (20°C)
高温抗弯强度Amandla okugoba ashushu (MPa)	90-100 (1400°C)
热膨胀系数 Ukwandiswa komlinganiso wobushushu @1500°C (10-6/°C)	4.70
导热系数Thermal conductivity @1200°C (W/m•K)	23
杨氏模量Imodyuli yeelastiki (GPa)	240
抗热震性Ukuxhathisa ukothuka kwe-Thermal	很好Ulunge kakhulu