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Isaphulelo esiQhelekileyo soMbane oPhilayo weCeramic Silicon Carbide Sic Heating Element

Isaphulelo esiQhelekileyo soMbane soMbane seSpiral seCeramic Silicon Carbide Sic Heating Element oboniswayo
  • Isaphulelo esiQhelekileyo soMbane oPhilayo weCeramic Silicon Carbide Sic Heating Element

Inkcazelo emfutshane:

I-Silicon carbide luhlobo olutsha lweekeramics ezinexabiso eliphezulu lokusebenza kunye neempawu ezintle zezinto eziphathekayo. Ngenxa yeempawu ezinje ngokuqina okuphezulu kunye nokuqina, ukumelana nobushushu obuphezulu, ukuguquguquka okukhulu kwe-thermal kunye nokuxhathisa ukubola kweekhemikhali, iSilicon Carbide inokumelana nayo yonke imichiza ephakathi. Ke ngoko, i-SiC isetyenziswa kakhulu kwimigodi yeoli, kwimichiza, koomatshini kunye ne-airspace, nkqu amandla enyukliya kunye nomkhosi banemfuno zabo ezikhethekileyo kwi-SIC. Esinye isicelo esiqhelekileyo esinokusinika amakhonkco okutywina epompo, i-valve kunye nezixhobo zokukhusela njl.


Iinkcukacha zeMveliso

Iithegi zeMveliso

Silandela i-tenet yolawulo "Umgangatho uphezulu, iNkonzo iphezulu, iReputation yokuqala", kwaye siya kudala ngokunyanisekileyo kwaye sabelane ngempumelelo nabo bonke abathengi be-Ordinary Discount Electric Double Spiral Ceramic Silicon Carbide Sic Heating Element, Abathengi kuqala! Nokuba yintoni na oyifunayo, kufuneka senze konke okusemandleni ethu ukukunceda. Samkela ngokufudumeleyo abathengi abavela kwihlabathi liphela ukuba basebenzisane nathi kuphuhliso olufanayo.
Silandela umthetho wolawulo othi "Umgangatho uphezulu, iNkonzo iphezulu, iReputation iqala", kwaye siya kudala ngokunyanisekileyo kwaye sabelane ngempumelelo nabo bonke abathengi.China Silicon Carbide Sic Ukufudumeza Element kunye Elements Electric Ukufudumeza, Ukuba unazo naziphi na izicelo, pls sithumele i-imeyile ngeemfuno zakho ezibanzi, siya kukubonelela ngexabiso elithengisiweyo loKhuphiswano ngoMgangatho oPhezulu kunye neNkonzo eNgcono yokuQala yokuQala! Singakunika awona maxabiso akhuphisanayo kunye nomgangatho ophezulu, kuba besiyiNgcali ngakumbi! Ngoko khumbula ukuba ungalibazisi ukuqhagamshelana nathi.

Iingenelo

Ukumelana ne-oxidation yobushushu obuphezulu
Uxhathiso olugqwesileyo lweCorrosion
Ukuxhathisa okulungileyo kweAbrasion
I-coefficient ephezulu yokushisa ukushisa
Ukuzithambisa, ukuxinana okuphantsi
Ukuqina okuphezulu
Uyilo olulungiselelweyo.

I-HGF (2)
I-HGF (1)

Usetyenziso

-Indawo ekwaziyo ukumelana nokunxitywa: i-bushing, ipleyiti, umbhobho wokuqhunyiswa kwesanti, umgca wenkanyamba, umphanda wokusila, njl.
-Umgangatho wobushushu obuphezulu: i-siC Slab, iTube yokuCima iFurnace, iTube eRadiant, i-crucible, i-Heating Element, i-Roller, i-Beam, i-Heat Exchanger, i-Cold Air Pipe, i-Burner Nozzle, i-Thermocouple Protection Tube, isikhephe se-SiC, i-Kiln car Structure, i-Setter, njl.
-I-Silicon Carbide Semiconductor: Isikhephe se-SiC wafer, i-sic chuck, i-sic paddle, i-sic cassette, i-sic diffusion ityhubhu, i-wafer fork, ipleyiti yokufunxa, isikhokelo, njl.
-I-Silicon Carbide Seal Field: zonke iintlobo zeringi yokutywina, ukuthwala, i-bushing, njl.
-I-Photovoltaic Field: I-Cantilever Paddle, i-Barrel yokugaya, i-Silicon Carbide Roller, njl.
-Indawo yebhetri yeLithium

I-WAFER (1)

I-WAFER (2)

IiPropati zoBume beSiC

Ipropati Ixabiso Indlela
Ukuxinana 3.21 g/cc I-Sink-float kunye ne-dimension
Ubushushu obuthile 0.66 J/g °K Isibane se-laser pulsed
Amandla e-Flexural 450 MPa560 MPa I-4 point bend, i-RT4 point bend, i-1300 °
Ukuqina kokwaphuka 2.94 MPa m1/2 I-Microindentation
Ukuqina 2800 Vicker, 500g umthwalo
Elastic ModulusOlutsha's Modulus 450 GPA430 GPA 4 pt ukugoba, RT4 pt ukugoba, 1300 °C
Ubungakanani beenkozo 2 – 10 µm I-SEM

Iipropati zoThermal zeSiC

I-Thermal Conductivity 250 W/m °K Indlela yeLaser flash, RT
Ukwandiswa kweThermal (CTE) 4.5 x 10-6 °K Ubushushu begumbi ukuya kuma-950 °C, i-silica dilatometer

IiParameters zobuGcisa

Into Iyunithi Idatha
I-RBSiC(SiSiC) NBSiC I-SSiC RSiC OSiC
Umxholo weSiC % 85 75 99 99.9 ≥99
Umxholo wesilicon wasimahla % 15 0 0 0 0
Ubushushu benkonzo enkulu ℃ 1380 1450 1650 1620 1400
Ukuxinana g/cm3 3.02 2.75-2.85 3.08-3.16 2.65-2,75 2.75-2.85
I-porosity evulekile % 0 13-15 0 15-18 7-8
Amandla okugoba 20℃ Mpa 250 160 380 100 /
Amandla okugoba 1200℃ Mpa 280 180 400 120 /
Imodyuli ye-elasticity 20℃ Gpa 330 580 420 240 /
Imodyuli ye-elasticity 1200℃ Gpa 300 / / 200 /
Thermal conductivity 1200℃ W/mK 45 19.6 100-120 36.6 /
I-Coefficient yokwandiswa kwe-thermal K-1X10-6 4.5 4.7 4.1 4.69 /
HV Kg/mm2 2115 / 2800 / /

I-CVD ye-silicon carbide yokwambathisa kumphezulu wangaphandle we-silicon carbide iimveliso ze-ceramic ezinokufikelela kubunyulu obungaphezulu kwe-99.9999% ukuhlangabezana neemfuno zabathengi kwishishini le-semiconductor.

Imifanekiso

I-WAFER (3)

IWAFER (4)

IWAFER (5) I-WAFER (6)

Silandela i-tenet yolawulo "Umgangatho uphezulu, iNkonzo iphezulu, iReputation yokuqala", kwaye siya kudala ngokunyanisekileyo kwaye sabelane ngempumelelo nabo bonke abathengi be-Ordinary Discount Electric Double Spiral Ceramic Silicon Carbide Sic Heating Element, Abathengi kuqala! Nokuba yintoni na oyifunayo, kufuneka senze konke okusemandleni ethu ukukunceda. Samkela ngokufudumeleyo abathengi abavela kwihlabathi liphela ukuba basebenzisane nathi kuphuhliso olufanayo.
Isaphulelo EsiqhelekileyoChina Silicon Carbide Sic Ukufudumeza Element kunye Elements Electric Ukufudumeza, Ukuba unazo naziphi na izicelo, pls sithumele i-imeyile ngeemfuno zakho ezibanzi, siya kukubonelela ngexabiso elithengisiweyo loKhuphiswano ngoMgangatho oPhezulu kunye neNkonzo eNgcono yokuQala yokuQala! Singakunika awona maxabiso akhuphisanayo kunye nomgangatho ophezulu, kuba besiyiNgcali ngakumbi! Ngoko khumbula ukuba ungalibazisi ukuqhagamshelana nathi.

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