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Inkqubo yokuVelisa iSemiconductor-Etch Technology
Amakhulu eenkqubo ezifunekayo ukuguqula i-wafer ibe yi-semiconductor. Enye yezona nkqubo zibaluleke kakhulu ku-etching - oko kukuthi, ukukrola iipateni zesekethe ezintle kwi-wafer. Impumelelo yenkqubo yokubhala ixhomekeke ekulawuleni iinguqu ezahlukeneyo ngaphakathi koluhlu losasazo oluseti, kunye ne-etching nganye...Funda ngokugqithisileyo -
Izinto eziLungileyo kwiiNdandatho zokuGxininisa kwiZixhobo zokuFakela iPlasma: ISilicon Carbide (SiC)
Kwizixhobo zokuhombisa iplasma, amacandelo e-ceramic adlala indima ebalulekileyo, kubandakanya neringi yokugxila. Iringi yokugxila, ebekwe malunga ne-wafer kunye nokunxibelelana ngqo nayo, ibalulekile ekugxininiseni iplasma kwi-wafer ngokufaka i-voltage kwiringi. Oku kwandisa amandla ...Funda ngokugqithisileyo -
Isiphumo se-silicon carbide ukusetyenzwa kwekristale enye kumgangatho womphezulu we-wafer
Izixhobo zamandla e-Semiconductor zithatha indawo ephambili kwiinkqubo zombane zamandla, ngakumbi kumxholo wophuhliso olukhawulezayo lwetekhnoloji efana nobukrelekrele bokwenziwa, unxibelelwano lwe-5G kunye nezithuthi zamandla amatsha, iimfuno zokusebenza kubo ziye ...Funda ngokugqithisileyo -
Izinto eziphambili zokukhula kwe-SiC: I-Tantalum carbide coating
Okwangoku, isizukulwana sesithathu se-semiconductors silawulwa yi-silicon carbide. Kwixabiso leendleko zezixhobo zayo, i-substrate i-akhawunti ye-47%, kunye ne-epitaxy i-akhawunti ye-23%. Ezi zimbini zidibene malunga ne-70%, eyona nxalenye ibalulekileyo ye-silicon carbide device manufa...Funda ngokugqithisileyo -
Iimveliso ezigqunywe nge-tantalum carbide zikonyusa njani ukuxhathisa kokubola kwemathiriyeli?
I-Tantalum carbide coating yitekhnoloji yonyango ehlala isetyenziswa ngaphezulu enokuphucula kakhulu ukuxhathisa kokubola kwezixhobo. I-Tantalum carbide coating inokudityaniswa kumphezulu we-substrate ngeendlela ezahlukeneyo zokulungiselela, ezifana ne-chemical deposition deposition, i-physica ...Funda ngokugqithisileyo -
Izolo, iBhodi yeNzululwazi kunye neTekhnoloji yoBuchule ikhuphe isibhengezo sokuba i-Huazhuo Precision Technology iphelise i-IPO yayo!
Nje wabhengeza unikezelo lokuqala 8-intshi SIC izixhobo laser annealing e China, leyo kwakhona ubuchwepheshe Tsinghua kaThixo; Kwakutheni ukuze bazirhoxise ngokwabo izixhobo? Amagama nje ambalwa: Okokuqala, iimveliso zahluke kakhulu! Ekuqaleni, andazi ukuba benza ntoni. Okwangoku, H...Funda ngokugqithisileyo -
I-CVD ye-silicon carbide yokwambathisa-2
I-CVD silicon carbide coating 1. Kutheni kukho i-silicon carbide coating I-epitaxial layer yifilimu ethile yekristale encinci ekhulile ngesiseko se-wafer ngokusebenzisa inkqubo ye-epitaxial. I-substrate wafer kunye nefilimu ebhityileyo ye-epitaxial ngokudibeneyo ibizwa ngokuba yi-epitaxial wafers. Phakathi kwabo, i...Funda ngokugqithisileyo -
Ukulungiselela inkqubo yokwaleka kwe-SIC
Okwangoku, iindlela zokulungiselela ze-SiC zokugquma ziquka indlela ye-gel-sol, indlela yokufakela, indlela yokugubungela i-brush, indlela yokutshiza i-plasma, indlela yokuphendula umphunga wekhemikhali (CVR) kunye ne-chemical vapor deposition method (CVD). Indlela yokufakelaLe ndlela luhlobo lwenqanaba eliphezulu lobushushu obuqinileyo ...Funda ngokugqithisileyo -
I-CVD Silicon Carbide Coating-1
Yintoni i-CVD SiC Chemical deposition deposition (CVD) yinkqubo yokubeka ivacuum esetyenziselwa ukuvelisa imathiriyeli eqinileyo yococeko oluphezulu. Le nkqubo ihlala isetyenziswa kwindawo yokuvelisa i-semiconductor ukwenza iifilimu ezibhityileyo kumphezulu wee-wafers. Kwinkqubo yokulungiselela i-SiC nge-CVD, i-substrate i-exp...Funda ngokugqithisileyo -
Uhlalutyo lwesakhiwo sokususa kwikristale ye-SiC ngokulandela umkhondo we-ray uncediswa yi-X-ray ye-topological imaging.
Imvelaphi yophando Ukubaluleka kokusetyenziswa kwesilicon carbide (SiC): Njengesixhobo semiconductor ebanzi, isilicon carbide itsale ingqalelo enkulu ngenxa yeempawu zayo zombane ezigqwesileyo (ezifana ne-bandgap enkulu, isantya esiphezulu se-electron saturation kunye ne-thermal conductivity). Ezi prop...Funda ngokugqithisileyo -
Inkqubo yokulungiselela ikristale yembewu kwi-SiC enye yokukhula kwekristale 3
Ukuqinisekiswa kokuKhulaI-silicon carbide (SiC) iikristale zembewu zalungiswa ngokulandela inkqubo echazwe kwaye yaqinisekiswa ngokukhula kwekristale ye-SiC. Iqonga lokukhula elisetyenzisiweyo yayiyi-furnace yokukhula ye-SiC eyaphuhliswayo kunye neqondo lokushisa lokukhula kwe-2200 ℃, uxinzelelo lokukhula kwe-200 Pa, kunye nokukhula ...Funda ngokugqithisileyo -
Inkqubo yokuLungisa iCrystal yeMbewu kwiSiC yokuKhula kweCrystal enye (Icandelo 2)
2. Inkqubo yoMfuniselo 2.1 Ukunyangwa kweFilimu encamathelayo Kwaphawulwa ukuba ukwenza ngokuthe ngqo ifilimu yekhabhoni okanye ukudibanisa ngephepha legraphite kwiiwafers ze-SiC ezigqunywe nge-adhesive kwakhokelela kwimiba emininzi: 1. Ngaphantsi kweemeko ze-vacuum, ifilimu yokuncamathela kwii-wafers ze-SiC zenza ukubonakala kwe-scalelike ngenxa. ukusayina...Funda ngokugqithisileyo