-
Yintoni iTantalum Carbide?
I-Tantalum carbide (i-TaC) yimbumba yokubini ye-tantalum kunye nekhabhoni enefomula yekhemikhali i-TaC x, apho x ikholisa ukuhluka phakathi kwe-0.4 kunye ne-1. Ziqinile ngokugqithisileyo, zilukhuni, iimathiriyeli zeseramikhi ezichasayo ezine-metallic conductivity. Zingumgubo omdaka-ngwevu kwaye thina...Funda ngokugqithisileyo -
yintoni i-tantalum carbide
I-Tantalum carbide (i-TaC) yi-ultra-high i-ceramic material ye-ceramic kunye nokumelana nokushisa okuphezulu, ukuxinana okuphezulu, ukuxinana okuphezulu; ukucoceka okuphezulu, umxholo wokungcola <5PPM; kunye ne-inertness yeekhemikhali kwi-ammonia kunye ne-hydrogen kumaqondo obushushu aphezulu, kunye nokuzinza okuhle kwe-thermal. Into ebizwa ngokuba yi-ultra-high ...Funda ngokugqithisileyo -
Yintoni i-epitaxy?
Uninzi lweenjineli aziqhelanga ne-epitaxy, edlala indima ebalulekileyo kwimveliso yesixhobo se-semiconductor. I-Epitaxy ingasetyenziselwa kwiimveliso ze-chip ezahlukeneyo, kunye neemveliso ezahlukeneyo zineentlobo ezahlukeneyo ze-epitaxy, kuquka i-Si epitaxy, i-SiC epitaxy, i-GaN epitaxy, njl njl. Yintoni i-epitaxy?I-Epitaxy yi...Funda ngokugqithisileyo -
Zeziphi iiparamitha ezibalulekileyo zeSiC?
I-Silicon carbide (i-SiC) yinto ebalulekileyo ebanzi ye-bandgap semiconductor esetyenziswa ngokubanzi kumandla aphezulu kunye nezixhobo zombane eziphezulu. Oku kulandelayo zezinye iiparamitha eziphambili zee-silicon carbide wafers kunye nengcaciso yazo eneenkcukacha: ILattice Parameters:Qinisekisa ukuba ...Funda ngokugqithisileyo -
Kutheni le nto i-silicon enye yekristale kufuneka iqengqiwe?
Ukuqengqeleka kubhekisa kwinkqubo yokusila idayamitha yangaphandle yesilicon intonga enye yekristale ibe yintonga enye yekristale yobukhulu obufunekayo kusetyenziswa ivili lokusila idayimani, kunye nokusila umphezulu osicaba wesalathiso okanye indawo yokubeka intonga yekristale enye. Umphandle wedayamitha yangaphandle...Funda ngokugqithisileyo -
Iinkqubo zokuVelisa iiPowders zeSiC ezikwiMgangatho oPhezulu
I-Silicon carbide (i-SiC) yi-inorganic compound eyaziwa ngeempawu zayo ezikhethekileyo. I-SiC eyenzeka ngokwemvelo, eyaziwa ngokuba yi-moissanite, inqabile. Ukusetyenziswa kwemizi-mveliso, i-silicon carbide iveliswa kakhulu ngeendlela zokwenziwa. Kwi-Semicera Semiconductor, siphucula ubuchwephesha obuphambili...Funda ngokugqithisileyo -
Ukulawulwa kwe-radial resistivity efanayo ngexesha lokutsalwa kwekristale
Izizathu eziphambili ezichaphazela ukufana kwe-radial resistivity ye-crystals enye yi-flatness ye-slid-liquid interface kunye nefuthe elincinci lendiza ngexesha lokukhula kwekristale , i...Funda ngokugqithisileyo -
Kutheni le nto imagnethi inokuthi isithando somlilo sekristale siphucule umgangatho wekristale enye
Ekubeni i-crucible isetyenziswa njengesikhongozeli kwaye kukho i-convection ngaphakathi, njengoko ubungakanani bekristale eveliswayo enye inyuka, ukuhanjiswa kobushushu kunye nokulingana kweqondo lokushisa kuba nzima ukulawula. Ngokongeza intsimi yamagnetic ukwenza i-convection yokunyibilika isebenze kumandla kaLorentz, ukuhanjiswa kunokuba...Funda ngokugqithisileyo -
Ukukhula okukhawulezayo kweekristale ze-SiC enye usebenzisa i-CVD-SiC umthombo wobuninzi ngendlela ye-sublimation
Ukukhula ngokukhawuleza kwe-SiC Single Crystal Ukusebenzisa i-CVD-SiC Bulk Source ngokusebenzisa i-Sublimation MethodNgokusebenzisa iibhloko ze-CVD-SiC ezihlaziyiweyo njengomthombo we-SiC, iikristale ze-SiC zakhuliswa ngempumelelo kwizinga le-1.46 mm / h ngokusebenzisa indlela ye-PVT. Umbhobho wekristale okhulileyo kunye nokuxinana kwe-dislocation kubonisa ukuba ...Funda ngokugqithisileyo -
Umxholo oLungelweyo kunye noGuquliweyo kwiSilicon Carbide Epitaxial Growth Equipment
I-Silicon carbide (i-SiC) substrates ineziphene ezininzi ezithintela ukuqhutyelwa ngqo. Ukwenza ii-chip wafers, ifilimu ethile ye-crystal eyodwa kufuneka ikhuliswe kwi-substrate ye-SiC ngokusebenzisa inkqubo ye-epitaxial. Le filimu yaziwa ngokuba yi-epitaxial layer. Phantse zonke izixhobo ze-SiC ziyenzeka kwi-epitaxial...Funda ngokugqithisileyo -
Indima ebalulekileyo kunye neeMeko zokuSebenza ze-SiC-Coated Graphite Susceptors kwiSemiconductor Manufacturing
I-Semicera Semiconductor iceba ukunyusa imveliso yezinto eziphambili zezixhobo zokuvelisa i-semiconductor kwihlabathi jikelele. Ngo-2027, sijonge ukuseka umzi-mveliso omtsha wama-20,000 wemitha yesikweri kunye notyalo-mali lulonke lwe-70 yezigidi zeedola. Enye yezinto zethu ezingundoqo, i-silicon carbide (SiC) i-wafer carr...Funda ngokugqithisileyo -
Kutheni le nto kufuneka senze i-epitaxy kwi-silicon wafer substrates?
Kwikhonkco leshishini le-semiconductor, ngakumbi kwi-semiconductor yesizukulwana sesithathu (i-wide bandgap semiconductor) ikhonkco loshishino, kukho i-substrates kunye ne-epitaxial layers. Yintoni intsingiselo ye-epitaxial layer? Yintoni umahluko phakathi kwe-substrate kunye ne-substrate? Indawo engaphantsi...Funda ngokugqithisileyo