Kwinkqubo yokulungiselela i-wafer, kukho izixhumanisi ezimbini eziphambili: enye ilungiselelo le-substrate, kwaye enye kukuphunyezwa kwenkqubo ye-epitaxial. I-substrate, i-wafer eyenziwe ngononophelo ukusuka kwi-semiconductor enye ye-crystal material, inokufakwa ngokuthe ngqo kwinkqubo yokuvelisa i-wafer njengesiseko sokuvelisa izixhobo ze-semiconductor, okanye inokwandiswa ngakumbi ngeenkqubo ze-epitaxial.
Ke, yintoni i-denotation? Ngamafutshane, i-epitaxy kukukhula koluhlu olutsha lwe-crystal eyodwa kwi-crystal substrate enye ecutshungulwe kakuhle (ukusika, ukugaya, ukupolisha, njl.). Olu luhlu olutsha lwekristale kunye ne-substrate inokwenziwa kwezinto ezifanayo okanye izinto ezahlukeneyo, ukwenzela ukuba ukukhula okungafaniyo okanye okungafaniyo kunokufezekiswa njengoko kufuneka. Ngenxa yokuba i-crystal layer esanda kukhula iya kwanda ngokwesigaba sekristale se-substrate, ibizwa ngokuba yi-epitaxial layer. Ubukhulu bayo buzii-microns ezimbalwa kuphela. Ukuthatha i-silicon njengomzekelo, ukukhula kwe-silicon epitaxial kukukhulisa umaleko we-silicon kunye nokuqhelaniswa nekristale efanayo njenge-substrate, ukuxhathisa okulawulekayo kunye nobukhulu, kwi-silicon enye yekristale substrate ene-crystal orientation ethile. I-silicon enye yekristale umaleko kunye nesakhiwo esigqibeleleyo se-lattice. Xa i-epitaxial layer ikhulile kwi-substrate, yonke into ibizwa ngokuba yi-epitaxial wafer.
Kumzi mveliso we-silicon semiconductor yemveli, ukwenza izixhobo ezisebenza rhoqo kunye nezixhobo ezinamandla ngokuthe ngqo kwii-silicon wafers ziya kudibana nobunzima obuthile. Ngokomzekelo, iimfuno zombane ophezulu wokuqhekeka, ukuxhathisa uchungechunge oluncinci kunye nokuhla kwe-voltage encinci ye-saturation kwindawo yokuqokelela kunzima ukuyifumana. Ukuqaliswa kweteknoloji ye-epitaxy kusombulula ngobuchule ezi ngxaki. Isisombululo kukukhulisa i-high-resistivity epitaxial layer kwi-low-resistivity silicon substrate, kwaye emva koko wenze izixhobo kwi-high-resistivity epitaxial layer. Ngale ndlela, i-high-resistivity epitaxial layer inika i-voltage ephezulu yokuphuka kwesixhobo, ngelixa i-substrate ye-low-resistivity inciphisa ukuxhathisa kwe-substrate, ngaloo ndlela inciphisa ukuhla kwamandla ombane, ngaloo ndlela ifezekisa i-voltage ephezulu yokuphuka kunye ne-Balance encinci phakathi kokumelana kunye ne-substrate. ukuhla kwamandla amancinci.
Ukongeza, itekhnoloji ye-epitaxy efana ne-epitaxy yesigaba somphunga kunye ne-epitaxy yesigaba solwelo se-GaAs kunye nezinye ii-III-V, II-VI kunye nezinye izixhobo ze-molecular compound semiconductor nazo ziye zaphuhliswa kakhulu kwaye ziye zaba sisiseko sezixhobo ezininzi ze-microwave, izixhobo ze-optoelectronic kunye namandla. izixhobo. Itekhnoloji yenkqubo eyimfuneko kwimveliso, ngakumbi usetyenziso oluyimpumelelo lwe-molecular beam kunye ne-metal-organic vapor phase epitaxy technology kumaleko amancinci, ii-superlattices, imithombo ye-quantum, i-strained superlattices, kunye ne-atomic-level thin-layer epitaxy ibe yintsimi entsha yophando lwe-semiconductor. Uphuhliso “lweProjekthi yeBhanti yaMandla” lubeke isiseko esiluqilima.
Ngokubhekiselele kwizixhobo ze-semiconductor zesizukulwana sesithathu, phantse zonke ezo zixhobo ze-semiconductor zenziwe kwi-epitaxial layer, kwaye i-silicon carbide wafer ngokwayo isebenza kuphela njenge-substrate. Ubuninzi bezinto ze-SiC epitaxial, ugxininiso lwe-carrier carrier kunye nezinye iiparameters zichaza ngokuthe ngqo iipropati ezahlukeneyo zombane zezixhobo ze-SiC. Izixhobo ze-silicon ze-carbide ze-high-voltage applications zibeka phambili iimfuno ezintsha zeeparitha ezifana nobukhulu bezinto ze-epitaxial kunye nogxininiso lwe-carrier carrier. Ke ngoko, itekhnoloji ye-silicon carbide epitaxial idlala indima eqinisekileyo ekusebenziseni ngokupheleleyo ukusebenza kwezixhobo ze-silicon carbide. Ukulungiswa phantse zonke izixhobo zamandla eSiC zisekwe kumgangatho ophezulu weSiC epitaxial wafers. Ukuveliswa kwee-epitaxial layers yinxalenye ebalulekileyo ye-wide bandgap semiconductor industry.
Ixesha lokuposa: May-06-2024