Yintoni i-epitaxy?

Uninzi lweenjineli aziqhelangai-epitaxy, edlala indima ebalulekileyo kwimveliso yesixhobo se-semiconductor.Epitaxyingasetyenziselwa kwiimveliso ezahlukeneyo ze-chip, kunye neemveliso ezahlukeneyo zineentlobo ezahlukeneyo ze-epitaxy, kuqukaSi epitaxy, I-SiC epitaxy, I-GaN epitaxy, njl.

Yintoni i-epitaxy?
I-Epitaxy ihlala ibizwa ngokuba yi "Epitaxy" ngesiNgesi. Eli gama livela kwelesiGrike elithi “epi” (elithetha “phezulu”) nelithi “iteksi” (elithetha “ulungiselelo”). Njengoko igama libonisa, lithetha ukucwangcisa kakuhle phezu kwento. Inkqubo ye-epitaxy kukufaka i-crystal layer enye encinci kwi-crystal substrate enye. Le crystal layer esanda kufakwa ibizwa ngokuba yi-epitaxial layer.

Kukho iintlobo ezimbini eziphambili ze-epitaxy: i-homoepitaxial kunye ne-heteroepitaxial. I-Homoepitaxial ibhekisela ekukhuliseni izinto ezifanayo kuhlobo olufanayo lwe-substrate. I-epitaxial layer kunye ne-substrate inesakhiwo esifanayo se-lattice. I-Heteroepitaxy kukukhula kwesinye isixhobo kwi-substrate yento enye. Kule meko, isakhiwo se-lattice se-epitaxially ekhulile i-crystal layer kunye ne-substrate inokwahluka. Ziziphi iikristale enye kunye ne-polycrystalline?
Kwii-semiconductors, sihlala siva amagama e-crystal silicon kunye ne-polycrystalline silicon. Kutheni ezinye ii-silicon zibizwa ngokuba ziikristale enye kunye ne-silicon ebizwa ngokuba yi-polycrystalline?

I-crystal eyodwa: Ilungiselelo le-lattice liqhubekayo kwaye alitshintshi, ngaphandle kwemida yengqolowa, oko kukuthi, i-crystal yonke ihlanganiswe ne-lattice enye ene-crystal orientation ehambelanayo. I-Polycrystalline: I-Polycrystalline yenziwe ngeenkozo ezininzi ezincinci, nganye yazo i-crystal enye, kwaye i-orientation yabo i-random ngokubhekiselele komnye nomnye. Ezi nkozo zahlulwe yimida yeenkozo. Iindleko zokuvelisa izinto ze-polycrystalline ziphantsi kuneekristale enye, ngoko ke ziseluncedo kwezinye izicelo. Iya kubandakanyeka phi inkqubo ye-epitaxial?
Ukwenziwa kweesekethe ezidibeneyo ezisekelwe kwi-silicon, inkqubo ye-epitaxial isetyenziswa ngokubanzi. Umzekelo, i-silicon epitaxy isetyenziselwa ukukhulisa umaleko wesilicon ecocekileyo nolawulwa kakuhle kwi-silicon substrate, ebaluleke kakhulu ekwenzeni iisekethe ezidityanisiweyo eziphambili. Ukongeza, kwizixhobo zamandla, i-SiC kunye ne-GaN zizinto ezimbini eziqhelekileyo ezisetyenziswa ngokubanzi i-bandgap semiconductor izixhobo ezinamandla okuphatha amandla. Ezi zixhobo zihlala zikhuliswa kwi-silicon okanye ezinye ii-substrates ngokusebenzisa i-epitaxy. Kunxibelelwano lwe-quantum, i-semiconductor-based quantum bits ihlala isebenzisa i-silicon germanium epitaxial structures. njl.

Iindlela zokukhula kwe-epitaxial?

Iindlela ezintathu eziqhelekileyo ezisetyenziswa kwi-semiconductor epitaxy:

I-Molecular beam epitaxy (MBE): I-Molecular beam epitaxy) iteknoloji yokukhula kwe-semiconductor epitaxial eyenziwa phantsi kweemeko ze-vacuum eziphezulu. Kule teknoloji, umthombo wemithombo ukhutshiwe ngendlela yee-athomu okanye imiqadi yeemolekyuli kwaye emva koko ifakwe kwi-crystalline substrate. I-MBE yitekhnoloji yokukhulisa ifilim echaneke kakhulu kwaye elawulekayo enokulawula ngokuthe ngqo ukutyeba kwezinto ezifakiweyo kwinqanaba leathom.

I-Metal organic CVD (MOCVD): Kwinkqubo ye-MOCVD, isinyithi se-organic kunye neegesi ze-hydride eziqulethe izinto ezifunekayo zinikezelwa kwi-substrate kwiqondo lokushisa elifanelekileyo, kwaye izinto ezifunekayo ze-semiconductor zenziwe ngokuphendula kweekhemikhali kwaye zifakwe kwi-substrate, ngelixa eziseleyo. iikhompawundi kunye neemveliso reaction ziyakhutshwa.

I-Vapor Phase Epitaxy (VPE): I-Vapor Phase Epitaxy yiteknoloji ebalulekileyo esetyenziswa ngokuqhelekileyo kwimveliso yezixhobo ze-semiconductor. Umgaqo wayo osisiseko kukuthutha umphunga wento enye okanye ikhompawundi kwirhasi yokuthwala kwaye idipozithe iikristale kwi-substrate ngokusabela kweekhemikhali.