Ukukhula kwe-Epitaxial iteknoloji ekhulisa i-crystal layer eyodwa kwi-crystal substrate (i-substrate) kunye ne-crystal orientation efana ne-substrate, njengokungathi i-crystal yasekuqaleni iye yanda ngaphandle. Le crystal layer esanda kukhula inokwahluka kwi-substrate ngokohlobo lwe-conductivity, resistivity, njl., kwaye inokukhula i-crystals ye-multi-layer enye enobunzima obuhlukeneyo kunye neemfuno ezahlukeneyo, ngaloo ndlela iphucula kakhulu ukuguquguquka koyilo lwesixhobo kunye nokusebenza kwesixhobo. Ukongezelela, inkqubo ye-epitaxial isetyenziswa ngokubanzi kwi-PN junction isolation technology kwiisekethe ezidibeneyo kunye nokuphucula umgangatho wezinto eziphathekayo kwiisekethe ezinkulu ezidibeneyo.
Ukwahlula kwe-epitaxy ikakhulu kusekelwe kwiintlobo zeekhemikhali ezahlukeneyo ze-substrate kunye ne-epitaxial layer kunye neendlela ezahlukeneyo zokukhula.
Ngokweendlela ezahlukeneyo zeekhemikhali, ukukhula kwe-epitaxial kunokohlulwa kube ziindidi ezimbini:
1. I-Homoepitaxial: Kule meko, i-epitaxial layer ine-chemical composition efanayo ne-substrate. Umzekelo, iileya ze-silicon epitaxial zikhuliswe ngokuthe ngqo kwi-silicon substrates.
2. I-Heteroepitaxy: Apha, i-chemical composition of the epitaxial layer ihluke kwi-substrate. Ngokomzekelo, i-gallium nitride epitaxial layer ikhuliswe kwi-sapphire substrate.
Ngokweendlela ezahlukeneyo zokukhula, itekhnoloji yokukhula kwe-epitaxial inokwahlulwa ibe ziindidi ezahlukeneyo:
1. I-molecular beam epitaxy (MBE): Le yiteknoloji yokukhulisa ifilimu enye yekristale encinci kwi-crystal substrates enye, ephunyezwa ngokulawula ngokuchanekileyo izinga lokuhamba kwe-molecular beam kunye noxinaniso lwe-beam kwi-ultra-high vacuum.
2. I-Metal-organic chemical vapor deposition (MOCVD): Le teknoloji isebenzisa i-metal-organic compounds kunye ne-gas-phase reagents ukwenza ii-chemical reactions kumaqondo aphezulu okushisa ukuvelisa izinto ezifunekayo zefilimu. Inezicelo ezibanzi ekulungiseleleni izinto ezihlanganisiweyo ze-semiconductor kunye nezixhobo.
3. I-epitaxy yesigaba se-Liquid (LPE): Ngokudibanisa izinto ezimanzi kwi-crystal substrate enye kunye nokwenza unyango lokushisa kwiqondo lokushisa elithile, i-liquid material crystallizes ukwenza ifilimu ye-crystal eyodwa. Iifilimu ezilungiselelwe yile teknoloji zihambelana ne-lattice kwi-substrate kwaye zihlala zisetyenziselwa ukulungiselela izinto eziphathekayo ze-semiconductor kunye nezixhobo.
4. I-Vapor phase epitaxy (VPE): Isebenzisa i-gaseous reactants ukwenza i-chemical reactions kumaqondo aphezulu okushisa ukuvelisa izinto ezifunekayo zefilimu. Le teknoloji ifanelekile ukulungiselela indawo enkulu, ifilimu ye-crystal eyodwa ekumgangatho ophezulu, kwaye ibalasele ngakumbi ekulungiseleleni izinto eziphathekayo ze-semiconductor kunye nezixhobo.
5. I-Chemical beam epitaxy (CBE): Le teknoloji isebenzisa iintsimbi zeekhemikhali ukuze zikhule iifilimu ze-crystal enye kwii-substrates ze-crystal enye, eziphunyezwa ngokulawula ngokuchanekileyo izinga lokuhamba kweekhemikhali kunye nobuninzi be-beam. Inezicelo ezibanzi kulungiselelo lweefilimu ezikumgangatho ophakamileyo wekristale enye.
6. I-atomic layer epitaxy (ALE): Ukusebenzisa iteknoloji yokubeka itekhnoloji ye-atomic, izinto ezifunekayo zefilimu ezinqabileyo zifakwe umaleko kwi-crystal substrate enye. Le teknoloji inokulungiselela indawo enkulu, iifilimu zekristale ezikumgangatho ophezulu kwaye zihlala zisetyenziselwa ukulungiselela izixhobo kunye nezixhobo ze-semiconductor.
7. I-epitaxy yodonga olushushu (HWE): Ngokufudumeza okuphezulu kobushushu, i-gaseous reactants ifakwe kwi-crystal substrate enye ukwenza ifilimu ye-crystal eyodwa. Le teknoloji ifanelekile ukulungiselela indawo enkulu, iifilimu zekristale ezikumgangatho ophezulu, kwaye zisetyenziselwa ukulungiswa kwezinto eziphathekayo ze-semiconductor kunye nezixhobo.
Ixesha lokuposa: May-06-2024