Yintoni ukukhula kwe-epitaxial?

Ukukhula kwe-Epitaxial iteknoloji ekhulisa i-crystal layer eyodwa kwi-crystal substrate (i-substrate) kunye ne-crystal orientation efana ne-substrate, njengokungathi i-crystal yasekuqaleni iye yanda ngaphandle. Le crystal layer esanda kukhula inokwahluka kwi-substrate ngokohlobo lwe-conductivity, resistivity, njl., kwaye inokukhula i-crystals ye-multi-layer enye enobunzima obuhlukeneyo kunye neemfuno ezahlukeneyo, ngaloo ndlela iphucula kakhulu ukuguquguquka koyilo lwesixhobo kunye nokusebenza kwesixhobo. Ukongezelela, inkqubo ye-epitaxial isetyenziswa ngokubanzi kwi-PN junction isolation technology kwiisekethe ezidibeneyo kunye nokuphucula umgangatho wezinto eziphathekayo kwiisekethe ezinkulu ezidibeneyo.

Ukwahlula kwe-epitaxy ikakhulu kusekelwe kwiintlobo zeekhemikhali ezahlukeneyo ze-substrate kunye ne-epitaxial layer kunye neendlela ezahlukeneyo zokukhula.

Ngokweendlela ezahlukeneyo zeekhemikhali, ukukhula kwe-epitaxial kunokohlulwa kube ziindidi ezimbini:

1. I-Homoepitaxial:

Kule meko, i-epitaxial layer inokwakheka kweekhemikhali ezifanayo njenge-substrate. Umzekelo, iileya ze-silicon epitaxial zikhuliswe ngokuthe ngqo kwi-silicon substrates.

2. I-Heteroepitaxy:

Apha, ukubunjwa kweekhemikhali ze-epitaxial layer kuyahluke kwi-substrate. Ngokomzekelo, i-gallium nitride epitaxial layer ikhuliswe kwi-sapphire substrate.

Ngokweendlela ezahlukeneyo zokukhula, itekhnoloji yokukhula kwe-epitaxial inokwahlulwa ibe ziindidi ezahlukeneyo:

1. I-molecular beam epitaxy (MBE):

Le yitekhnoloji yokukhulisa iifilimu ezicwecwe ngekristale enye kwi-substrates yekristale enye, ephunyezwa ngokulawula ngokuchanekileyo umyinge wokuhamba komqadi wemolekyuli kunye noxinaniso lomqadi kwi-vacuum ephezulu kakhulu.

2. I-Metal-organic chemical vapor deposition (MOCVD):

Le teknoloji isebenzisa i-metal-organic compounds kunye ne-gas-phase reagents ukwenza ukuphendula kweekhemikhali kumaqondo aphezulu okushisa ukuvelisa izinto ezifunekayo zefilimu. Inezicelo ezibanzi ekulungiseleleni izinto ezihlanganisiweyo ze-semiconductor kunye nezixhobo.

3. I-epitaxy yesigaba solwelo (LPE):

Ngokungongeza izinto zamanzi kwi-crystal substrate enye kunye nokwenza unyango lobushushu kwiqondo elithile lokushisa, izinto ezimanzi zikhanya ukuze zenze ifilimu enye ye-crystal. Iifilimu ezilungiselelwe yile teknoloji zihambelana ne-lattice kwi-substrate kwaye zihlala zisetyenziselwa ukulungiselela izinto eziphathekayo ze-semiconductor kunye nezixhobo.

4. Umphunga wesigaba se-epitaxy (VPE):

Isebenzisa iireactants zegesi ukwenza iikhemikhali kumaqondo obushushu aphezulu ukuvelisa imathiriyeli yefilimu ecekethekileyo efunekayo. Le teknoloji ifanelekile ukulungiselela indawo enkulu, ifilimu ye-crystal eyodwa ekumgangatho ophezulu, kwaye ibalasele ngakumbi ekulungiseleleni izinto eziphathekayo ze-semiconductor kunye nezixhobo.

5. Chemical beam epitaxy (CBE):

Le teknoloji isebenzisa imiqadi yeekhemikhali ukukhulisa iifilimu zekristale enye kwi-crystal substrates enye, ephunyezwa ngokulawula ngokuchanekileyo izinga lokuhamba kweekhemikhali kunye nokuxinana kwemiqadi. Inezicelo ezibanzi kulungiselelo lweefilimu ezikumgangatho ophakamileyo wekristale enye.

6. Umaleko weatom epitaxy (ALE):

Ukusebenzisa itekhnoloji yokubeka umaleko weathom, izinto zefilimu ezicekethekileyo ezifunekayo zifakwa umaleko kumgangatho wekristale enye. Le teknoloji inokulungiselela indawo enkulu, iifilimu zekristale ezikumgangatho ophezulu kwaye zihlala zisetyenziselwa ukulungiselela izixhobo kunye nezixhobo ze-semiconductor.

7. I-epitaxy yodonga olushushu (HWE):

Ngokufudumeza okuphezulu kobushushu, ii-reactants zegesi zifakwa kwi-crystal substrate enye ukwenza ifilimu yekristale enye. Le teknoloji ifanelekile ukulungiselela indawo enkulu, iifilimu zekristale ezikumgangatho ophezulu, kwaye zisetyenziselwa ukulungiswa kwezinto eziphathekayo ze-semiconductor kunye nezixhobo.