Ngawaphi amanyathelo aphambili ekusetyenzweni kweesubstrates zeSiC?

Siwavelisa njani amanyathelo okulungisa ama-substrates e-SiC ngolu hlobo lulandelayo:

1. I-Crystal Orientation: Ukusebenzisa i-X-ray diffraction ukuqhelanisa i-crystal ingot.Xa umqadi we-X-ray uqondiswe kubuso obunqwenelekayo bekristale, i-angle ye-diffracted beam imisela i-crystal orientation.

2. I-Outer Diameter Grinding: Iikristale enye ezikhule kwiicrucible zegraphite zihlala zidlula i-diameters eqhelekileyo.Ukusila kwedayimitha yangaphandle kuyabanciphisa kubungakanani obuqhelekileyo.

Ukugqiba Ukugaya Ubuso: I-4-intshi ye-4H-SiC substrates ngokuqhelekileyo inemida emibini yokumisa, iprayimari kunye neyesibini.Ukuphelisa ubuso bokusila kuvula le miphetho yokumisa.

3. Ukusarha ucingo: Ukusarha ngocingo linyathelo elibalulekileyo ekusetyenzweni kwe-4H-SiC substrates.Ukuqhekeka kunye nomonakalo ongaphantsi komhlaba owenziwe ngexesha lokusarha ucingo luchaphazela kakubi iinkqubo ezilandelayo, ukwandisa ixesha lokucubungula kunye nokubangela ukulahleka kwezinto.Eyona ndlela ixhaphakileyo yi-multi-wire sawing kunye ne-diamond abrasive.Ukunyakaza okuphindaphindiweyo kweengcingo zetsimbi eziboshwe nge-diamond abrasives zisetyenziselwa ukusika i-ingot ye-4H-SiC.

4. I-Chamfering: Ukuthintela i-edge chipping kunye nokunciphisa ilahleko esetyenziswayo ngexesha leenkqubo ezilandelayo, i-edges ebukhali yeetshiphu ze-wire-sawn chamfered kwiimilo ezichaziweyo.

5. Ukucweba: Ukusarha ngocingo kushiya imikrwelo emininzi kunye nomonakalo ongaphantsi komphezulu.Ukucwenga kwenziwa kusetyenziswa amavili edayimani ukususa ezi ziphene kangangoko kunokwenzeka.

6. Ukusila: Le nkqubo ibandakanya ukucola nokusila ngokucokisekileyo kusetyenziswa i-boron carbide encinci okanye i-diamond abrasives ukususa umonakalo oshiyekileyo kunye nomonakalo omtsha owenziwe ngexesha lokunciphisa.

7. Ukupholisha: Amanyathelo okugqibela abandakanya ukupolisha okurhabaxa kunye nokupholisha kakuhle kusetyenziswa i-alumina okanye i-silicon oxide abrasives.Ulwelo lokupholisha luthambisa umphezulu, oluthi ke lususwe ngoomatshini ngama-abrasives.Eli nyathelo liqinisekisa indawo egudileyo kwaye engonakali.

8. Ukucoca: Ukususa iincinci, isinyithi, iifilimu ze-oxide, i-organic residues, kunye nezinye izinto ezingcolileyo ezishiywe kumanyathelo okucubungula.

I-SiC epitaxy (2) - 副本(1)(1)


Ixesha lokuposa: May-15-2024