Zeziphi iiparamitha ezibalulekileyo zeSiC?

I-silicon carbide (SiC)yinto ebalulekileyo ye-bandgap semiconductor ebalulekileyo esetyenziswa ngokubanzi kumandla aphezulu kunye nezixhobo zombane ezisebenza rhoqo. Ezi zilandelayo zezinye iiparamitha eziphambili zeiipali ze-silicon carbidekunye neengcaciso zabo ezicacileyo:

Imilinganiselo yeLattice:
Qinisekisa ukuba i-lattice constant ye-substrate ihambelana ne-epitaxial layer ukuze ikhuliswe ukunciphisa iziphene kunye noxinzelelo.

Ngokomzekelo, i-4H-SiC kunye ne-6H-SiC zineendlela ezahlukeneyo ze-lattice, ezichaphazela umgangatho we-epitaxial layer kunye nokusebenza kwesixhobo.

Ulandelelwano lokupakisha:
I-SiC yenziwe ngama-athomu e-silicon kunye ne-athomu ye-carbon kwi-1: i-1 ratio kwi-macro scale, kodwa ukucwangciswa kwee-athomu ze-athomu kuyahluka, okuya kwenza izakhiwo ze-crystal ezahlukeneyo.

Iifom ze-crystal eziqhelekileyo ziquka i-3C-SiC (isakhiwo se-cubic), i-4H-SiC (isakhiwo se-hexagonal), kunye ne-6H-SiC (isakhiwo se-hexagonal), kunye nokulandelelana kwe-stacking ehambelanayo: ABC, ABCB, ABCACB, njl. iimpawu kunye neempawu ezibonakalayo, ngoko ke ukukhetha i-crystal form efanelekileyo kubalulekile kwizicelo ezithile.

Ubunzima be-Mohs: Imisela ubulukhuni be-substrate, echaphazela ukukhululeka kokulungiswa kunye nokuxhatshazwa kokugqoka.
I-Silicon carbide inobunzima obuphezulu kakhulu be-Mohs, ngokuqhelekileyo phakathi kwe-9-9.5, okwenza kube yinto enzima kakhulu efanelekileyo kwizicelo ezifuna ukuxhathisa okuphezulu.

Ubuninzi: Ichaphazela amandla omatshini kunye neempawu zokushisa ze-substrate.
Uxinaniso oluphezulu luthetha amandla angcono omatshini kunye ne-thermal conductivity.

I-Thermal Expansion Coefficient: Ibhekisa ekwenyukeni kobude okanye umthamo wesubstrate ngokunxulumene nobude okanye umthamo wokuqala xa ubushushu bunyuka ngeqondo elinye ngokukaCelsius.
Ukulungelelaniswa phakathi kwe-substrate kunye ne-epitaxial layer phantsi kokutshintsha kweqondo lokushisa kuchaphazela ukuzinza kwe-thermal yesixhobo.

I-Refractive Index: Kwizicelo ze-optical, i-index ye-refractive yi-parameter ephambili ekuyilweni kwezixhobo ze-optoelectronic.
Ukwahluka kwisalathiso se-refractive kuchaphazela isantya kunye nendlela yamaza okukhanya kwizinto eziphathekayo.

I-Dielectric Constant: Ichaphazela iimpawu ze-capacitance zesixhobo.
I-dielectric ephantsi rhoqo inceda ukunciphisa i-parasitic capacitance kunye nokuphucula ukusebenza kwesixhobo.

I-Thermal Conductivity:
Okubalulekileyo kusetyenziso lwamandla aphezulu kunye nobushushu obuphezulu, obuchaphazela ukusebenza kakuhle kokupholisa isixhobo.
I-thermal conductivity ephezulu ye-silicon carbide yenza ukuba ifaneleke kakuhle kwizixhobo zombane zamandla aphezulu kuba inokuqhuba ngokufanelekileyo ubushushu kude nesixhobo.

Umsantsa webhendi:
Ibhekisa kumahluko wamandla phakathi komphezulu webhendi yevalence kunye nomzantsi webhendi yokuqhuba kwimathiriyeli yesemiconductor.
Izixhobo ezibanzi ze-gap zifuna amandla aphezulu ukuvuselela utshintsho lwe-electron, okwenza i-silicon carbide isebenze kakuhle kwindawo yokushisa ephezulu kunye ne-radiation ephezulu.

Indawo yoMbane yoKwaphula:
Umda wombane onokuthi uxhathise impahla ye-semiconductor.
I-Silicon carbide inendawo yombane eyophukayo ephezulu kakhulu, eyivumela ukuba imelane nombane ophakamileyo kakhulu ngaphandle kokuphuka.

Isantya seSaturation Drift:
Ubungakanani besantya esiphezulu apho abathwali banokufikelela emva kokuba intsimi ethile yombane isetyenziswe kwizinto eziphathekayo ze-semiconductor.

Xa amandla ebala lombane enyuka ukuya kwinqanaba elithile, isantya somthwali asisayi kuphinda sinyuke ngokuphuculwa ngakumbi kwendawo yombane. Isantya ngeli xesha sibizwa ngokuba yi-saturation drift velocity. I-SiC inesantya esiphezulu sokukhukuliseka, esiluncedo ekuphunyezweni kwezixhobo zombane ezinesantya esiphezulu.

Ezi parameters kunye zigqiba ukusebenza kunye nokusebenza kweIifafa zeSiCkwizicelo ezahlukeneyo, ngakumbi ezo zikwindawo ephezulu, i-frequency ephezulu kunye nobushushu obuphezulu.