Ukufakelwa kwe-ion yindlela yokongeza inani elithile kunye nohlobo lokungcola kwizinto eziphathekayo ze-semiconductor ukutshintsha iimpawu zabo zombane. Isixa kunye nokuhanjiswa kokungcola kunokulawulwa ngokuchanekileyo.
Icandelo loku-1
Kutheni usebenzisa inkqubo yokufakelwa kwe-ion
Ukwenziwa kwezixhobo ze-semiconductor zamandla, i-P / N yengingqi ye-doping yendabukoamaqhekeza e-siliconinokuphunyezwa ngokusasazwa. Nangona kunjalo, ukusasazeka rhoqo kweeathom zokungcola kwii-silicon carbideiphantsi kakhulu, ngoko ke akukho ngqiqweni ukufezekisa i-doping ekhethiweyo ngenkqubo yokusasazwa, njengoko kubonisiwe kuMfanekiso 1. Ngakolunye uhlangothi, iimeko zobushushu bokufakelwa kwe-ion ziphantsi kunezo zenkqubo yokusasazwa, kwaye ukuhanjiswa kwe-doping okuguquguqukayo kunye nokuchanekileyo kunokusasazwa. yenziwe.
Umzobo 1 Ukuthelekiswa kokusasazwa kunye nokufakelwa kwe-ion teknoloji yedoping kwizinto ze-silicon carbide
Icandelo lesi-2
Indlela yokuphumelelai-silicon carbideukufakelwa kwe-ion
Isixhobo sokufakelwa kwe-ion ene-eneji ephezulu esetyenziswa kwinkqubo yokwenziwa kwe-silicon carbide ikakhulu iqulathe umthombo we-ion, iplasma, i-aspiration components, imagnethi yohlalutyo, imiqadi ye-ion, iityhubhu zokukhawulezisa, amagumbi enkqubo, kunye neediski zokuskena, njengoko kubonisiwe kuMfanekiso 2.
Umzobo we-2 umzobo weSchematic we-silicon carbide izixhobo zokufakelwa kwe-ion ene-energy ephezulu
(Umthombo: "ITekhnoloji yokuVelisa iSemiconductor")
Ukufakelwa kwe-SiC ion ngokuqhelekileyo kuqhutyelwa kwiqondo lokushisa eliphezulu, elinokunciphisa umonakalo kwi-crystal lattice ebangelwa yi-ion bombardment. Kuba4H-SiC amaqhekeza, ukuveliswa kweendawo zohlobo lwe-N ngokuqhelekileyo kufezekiswa ngokufakela i-nitrogen kunye ne-phosphorus ions, kunye nokuveliswa kwe-nitrogen.Uhlobo lwePiindawo zidla ngokufezekiswa ngokufaka iiyoni ze-aluminiyam kunye ne-boron ions.
Itheyibhile 1. Umzekelo we-doping ekhethiweyo kwi-SiC device yokuvelisa
(Umthombo: I-Kimoto, i-Cooper, i-Basic Basics ye-Silicon Carbide Technology: Ukukhula, ukubonakaliswa kweempawu, izixhobo kunye nezicelo)
Umzobo 3 Uthelekiso lofakelo lwe-ion yamandla ngamanyathelo amaninzi kunye nokuhanjiswa koxinzelelo lwe-wafer surface doping
(Umthombo: G.Lulli, Intshayelelo yoFakelo lwe-Ion)
Ukuze kuphunyezwe ukugxininiswa kwe-doping efanayo kwindawo yokufakelwa kwe-ion, iinjineli zihlala zisebenzisa i-multi-step ion implantation ukuze zilungelelanise ukuhanjiswa koxinzelelo ngokubanzi kwendawo yokufakelwa (njengoko kuboniswe kuMfanekiso 3); kweyona nkqubo yokuvelisa inkqubo, ngokulungelelanisa amandla okufakelwa kunye nedosi yokufakelwa kwe-ion implanter, i-doping concentration kunye nobunzulu be-doping yendawo yokufakelwa kwe-ion inokulawulwa, njengoko kubonisiwe kuMfanekiso 4. (a) kunye (b); Isihlomelo se-ion senza ukufakelwa kwe-ion efanayo kumphezulu wewafer ngokuskena umphezulu we-wafer amaxesha amaninzi ngexesha lokusebenza, njengoko kubonisiwe kuMfanekiso 4. (c).
(c) Indlela yokushukuma yofakelo lwe-ion ngexesha lofakelo lwe-ion
Umzobo 4 Ngexesha lenkqubo yokufakelwa kwe-ion, ukugxininiswa kokungcola kunye nobunzulu kulawulwa ngokulungelelanisa amandla okufakelwa kwe-ion kunye nedosi.
III
Inkqubo yokufaka i-acnealing ye-silicon carbide ion implantation
Ugxininiso, indawo yokusabalalisa, izinga lokusebenza, iziphene emzimbeni kunye nomgangatho wokufakelwa kwe-ion ziyimilinganiselo eziphambili zenkqubo yokufakelwa kwe-ion. Kukho izinto ezininzi ezichaphazela iziphumo zezi parameters, kubandakanywa idosi yokufakelwa, amandla, ukuqhelaniswa kwekristale kwizinto eziphathekayo, ubushushu bokufakelwa, ukushisa kwe-annealing, ixesha le-annealing, imo, njl. ukungcola kwe-silicon carbide emva kwe-ion implantation doping. Ukuthatha ireyithi ye-ionization yokwamkela i-aluminium kwindawo engathathi hlangothi ye-4H-SiC njengomzekelo, kugxininiso lwe-doping ye-1 × 1017cm-3, umlinganiselo we-ionization owamkelayo umalunga ne-15% kuphela kwiqondo lobushushu begumbi (ngokuqhelekileyo izinga le-ionization ye-silicon iphantse 100%). Ukuze kuphunyezwe injongo yezinga eliphezulu lokusebenza kunye neziphene ezimbalwa, inkqubo yokucoca iqondo lobushushu eliphezulu iya kusetyenziswa emva kokufakelwa kwe-ion ukuze kuhlaziywe iziphene ze-amorphous ezenziwe ngexesha lokufakelwa, ukwenzela ukuba ii-athomu ezihlonyelweyo zingene kwindawo yokutshintsha kwaye zisebenze, njengoko kubonisiwe. kuMzobo 5. Okwangoku, ukuqonda kwabantu kwindlela yenkqubo yokuthomalalisa kusenomda. Ukulawula kunye nokuqonda okunzulu kwenkqubo yokuqhawula yenye yezinto ezijoliswe kuphando zokufakelwa kwe-ion kwixesha elizayo.
Umzobo 5 Umzobo weSchematic wenguqu yolungiselelo lweathom kumphezulu wesilicon carbide ion implantation indawo phambi nasemva ion implantation annealing, apho V.siimele izithuba zesilicon, VCimele izithuba zekhabhoni, Ciimele iiathom zokuzalisa ikhabhoni, kunye neSiiimele i-silicon yokuzalisa iiathom
Ukuvulelwa kwe-Iyon kusebenze ngokubanzi kubandakanya ukufakwa eziko, ukuthotywa okukhawulezileyo kunye nokufakwa kwelaser. Ngenxa yokuthotywa kweeathom ze-Si kwizinto ze-SiC, iqondo lobushushu le-anneal ngokubanzi alidluli kwi-1800 ℃; I-atmosphere ye-annealing idla ngokuqhutyelwa kwigesi engasebenziyo okanye i-vacuum. Ii-ion ezahlukeneyo zibangela amaziko ahlukeneyo anesiphene kwi-SiC kwaye ifuna amaqondo okushisa ahlukeneyo. Ukusuka kwiziphumo ezininzi zovavanyo, kunokugqitywa ukuba ukuphakama kweqondo lokushisa kwe-annealing, liphezulu izinga lokuvula (njengoko kubonisiwe kuMfanekiso 6).
Umfanekiso wesi-6 Impembelelo yeqondo lobushushu bomlilo kwiqondo lokuvula umbane wenitrogen okanye ukufakwa kwephosphorus kwiSiC (kwiqondo lobushushu begumbi)
(Itotali yofakelo ithamo 1×1014cm-2)
(Umthombo: I-Kimoto, i-Cooper, i-Basic Basics ye-Silicon Carbide Technology: Ukukhula, ukubonakaliswa kweempawu, izixhobo kunye nezicelo)
Inkqubo esetyenziswa ngokuqhelekileyo yokuvula i-acnealing emva kokufakelwa kwe-SiC ion iqhutyelwa kwi-Armosphere ye-Ar kwi-1600 ℃ ~ 1700℃ ukuze iphinde ihlaziye i-SiC surface kwaye isebenze i-dopant, ngaloo ndlela iphucula ukuqhutyelwa kwendawo ye-doped; phambi kokufakwa kwe-annealing, umaleko wefilimu yekhabhoni unokufakwa kwi-wafer surface yokukhusela umphezulu ukunciphisa ukuthotywa komphezulu okubangelwa yi-Si desorption kunye nokufuduka kwe-athomu yomhlaba, njengoko kubonisiwe kuMfanekiso 7; emva kokucoca, ifilimu yekhabhoni inokususwa nge-oxidation okanye i-corrosion.
Umzobo 7 Uthelekiso loburhabaxa bomphezulu be-4H-SiC wafers kunye okanye ngaphandle kokhuseleko lwefilimu yekhabhoni phantsi kwe-1800 ℃ iqondo lobushushu le-annealing.
(Umthombo: I-Kimoto, i-Cooper, i-Basic Basics ye-Silicon Carbide Technology: Ukukhula, ukubonakaliswa kweempawu, izixhobo kunye nezicelo)
IV
Impembelelo yofakelo lwe-SiC ion kunye nenkqubo yokuvula i-annealing
Ukufakelwa kwe-Ion kunye nokuvula okulandelayo kuya kuvelisa iziphene ezinciphisa ukusebenza kwesixhobo: iziphene ezintsonkothileyo, iziphene zokupakisha (njengoko kubonisiwe kuMfanekiso 8), ukukhutshwa okutsha, iziphene ezinzulu okanye ezinzulu zomgangatho wamandla, i-basal plane dislocation loops kunye nokuhamba kwezinto ezikhoyo. Ekubeni inkqubo ye-ion bombardment enamandla kakhulu iya kubangela uxinzelelo kwi-wafer ye-SiC, i-high-temperature kunye ne-high-energy ion implantation process iyakwandisa i-wafer warpage. Ezi ngxaki zikwangulwalathiso olufuna ukuphuculwa ngokungxamisekileyo kwaye lufundwe kwinkqubo yokwenziwa kwe-SiC ion implantation and annealing.
Umzobo 8 Umzobo weSchematic wokuthelekisa phakathi kwe-4H-SiC ilungiselelo lelayithi eqhelekileyo kunye neempazamo ezahlukeneyo zokupakisha.
(Umthombo: Nicolὸ Piluso 4H-SiC Defects)
V.
Ukuphuculwa kwenkqubo yokufakelwa kwe-silicon carbide ion
(1) Ifilimu ye-oxide encinci igcinwe phezu kwendawo yokufakelwa kwe-ion ukunciphisa iqondo lomonakalo wokufakelwa okubangelwa ukufakelwa kwe-ion ene-eneji ephezulu kumphezulu we-silicon carbide epitaxial layer, njengoko kubonisiwe kuMfanekiso 9. (a) .
2 ngokulinganayo, ukuphucula umgangatho wokushisa okuphezulu kunye nokufakelwa kwe-ion ene-eneji ephezulu kwi-silicon carbide wafers, njengoko kuboniswe kuMfanekiso 9. (b).
(3) Lungiselela iqondo lokunyuka kweqondo lokushisa kunye nokufana kweqondo lokushisa ngexesha lokusebenza kwezixhobo zokushisa eziphezulu zokushisa.
Umfanekiso we-9 Iindlela zokuphucula inkqubo yokufakelwa kwe-ion
Ixesha lokuposa: Oct-22-2024