Ukusebenza okugqwesileyo kweSilicon Carbide Wafer Boats ekukhuleni kweCrystal

Iinkqubo zokukhula kweCrystal zisembindini wokwenziwa kwe-semiconductor, apho ukuveliswa kweewafers ezikumgangatho ophezulu kubalulekile. Inxalenye ebalulekileyo kwezi nkqubo yii-silicon carbide (SiC) isikhephe esisicaba. Izikhephe ezisicaba zeSiC ziye zafumana ukuqondwa okubalulekileyo kwishishini ngenxa yokusebenza kwazo okungaqhelekanga kunye nokuthembeka. Kweli nqaku, siza kuphonononga iimpawu eziphawulekayo zeIzikhephe zeSiCkunye nendima yabo ekuququzeleleni ukukhula kwekristale kwimveliso ye-semiconductor.

Izikhephe zeSiCziyilelwe ngokukodwa ukubamba kunye nokuthutha ii-semiconductor wafers ngexesha lezigaba ezahlukeneyo zokukhula kwekristale. Njengemathiriyeli, i-silicon carbide ibonelela ngokudityaniswa okukhethekileyo kweepropathi ezinqwenelekayo ezenza kube lolona khetho lufanelekileyo kwiinqanawa ezinqabileyo. Okokuqala nokuphambili ngamandla ayo omatshini abalaseleyo kunye nokuzinza kobushushu obuphezulu. I-SiC inobunzima obubalaseleyo kunye nokuqina, ukuyivumela ukuba imelane neemeko ezinzima ezidibana nazo ngexesha leenkqubo zokukhula kwekristale.

Enye inzuzo ephambili yeIzikhephe zeSiCkukuqhuba kwabo okukhethekileyo kwe-thermal. Ukutshatyalaliswa kobushushu yinto ebalulekileyo ekukhuleni kwekristale, njengoko kuchaphazela ukufana kweqondo lokushisa kunye nokuthintela uxinzelelo lwe-thermal kwi-wafers. I-SiC's high conductivity ye-thermal conductivity iququzelela ukuhanjiswa kobushushu okusebenzayo, iqinisekisa ukuhanjiswa kweqondo lokushisa okungaguqukiyo kuwo wonke ama-wafers. Olu phawu lunenzuzo ngokukodwa kwiinkqubo ezifana nokukhula kwe-epitaxial, apho ulawulo oluchanekileyo lobushushu luyimfuneko ekufezekiseni ukufakwa kwefilimu efanayo.

Ngaphezu koko,Izikhephe zeSiCbonisa ukunganyaniseki kweekhemikhali okugqwesileyo. Ziyakwazi ukumelana noluhlu olubanzi lweekhemikhali ezonakalisayo kunye neegesi eziqhelekileyo ezisetyenziswa kwimveliso ye-semiconductor. Olu uzinzo lwekhemikhali luqinisekisa ukubaIzikhephe zeSiCbagcine imfezeko kunye nokusebenza kwabo phezu kokuvezwa ixesha elide kwiinkqubo ezirhabaxa. ukuchasana nohlaselo lweekhemikhali kuthintela ukungcoliseka kunye nokuthotywa kwezinto, ukukhusela umgangatho wee-wafers ezikhuliswayo.

Ukuzinza komda kweSiC wafer boats yenye into ephawulekayo. Zenzelwe ukugcina imilo yazo kunye nefom nangaphantsi kwamaqondo okushisa aphezulu, ukuqinisekisa ukubekwa okuchanekileyo kwee-wafers ngexesha lokukhula kwekristale. Uzinzo olunomda kunciphisa nakuphi na ukujika okanye ukujika kwesikhephe, okunokukhokelela ekungalungelelaniseni kakuhle okanye ekukhuleni okungafananga phakathi kweewafers. Le ndawo ichanekileyo ibalulekile ekufezekiseni ulungelelwaniso olufunwayo lwecrystallographic kunye nokufana kwisiphumo semathiriyeli ye-semiconductor.

Izikhephe zeSiC wafer nazo zibonelela ngeempawu ezibalaseleyo zombane. I-Silicon carbide yimpahla ye-semiconductor ngokwayo, ebonakaliswe nge-bandgap ebanzi kunye ne-voltage ephezulu yokuphuka. Iimpawu zombane ze-SiC ziqinisekisa ukuvuza kombane okuncinci kunye nokuphazamiseka ngexesha leenkqubo zokukhula kwekristale. Oku kubaluleke ngakumbi xa ukhulisa izixhobo ezinamandla aphezulu okanye usebenza kunye nezakhiwo ezibuthathaka ze-elektroniki, njengoko kunceda ukugcina ingqibelelo yezinto ze-semiconductor eziveliswayo.

Ukongeza, izikhephe ze-SiC wafer zaziwa ngokuphila ixesha elide kunye nokuphinda zisebenziseke. Banobomi obude bokusebenza, kunye nokukwazi ukunyamezela imijikelezo emininzi yokukhula kwekristale ngaphandle kokuwohloka okukhulu. Oku komelela kuguqulela kwindleko-esebenzayo kwaye kunciphisa imfuno yokutshintshwa rhoqo. Ukusebenziseka kwakhona kweenqanawa ze-SiC wafer akubangeli nje igalelo kwizenzo ezizinzileyo zokuvelisa kodwa ziqinisekisa ukusebenza okungaguqukiyo kunye nokuthembeka kwiinkqubo zokukhula kwekristale.

Ukuqukumbela, izikhephe ezisicaba ze-SiC ziye zaba yinxalenye yokukhula kwekristale kwimveliso ye-semiconductor. Amandla abo akhethekileyo omatshini, ukuzinza kobushushu obuphezulu, ukuhanjiswa kwe-thermal, ukungazinzi kweekhemikhali, ukuzinza kwe-dimensional, kunye neempawu zombane zibenza banqweneleke kakhulu ekuququzeleleni iinkqubo zokukhula kwe-crystal. Izikhephe ze-SiC wafer ziqinisekisa ukuhanjiswa kobushushu obufanayo, kuthintela ungcoliseko, kwaye zenza kube lula ukubekeka okuchanekileyo kwee-wafers, ekugqibeleni zikhokelela ekuvelisweni kwezixhobo ezikumgangatho ophezulu ze-semiconductor. Njengoko imfuno yezixhobo eziphambili ze-semiconductor iqhubeka nokunyuka, ukubaluleka kwezikhephe ze-SiC wafer ekufezekiseni ukukhula okugqibeleleyo kwekristale akunakugqithiswa.