ISemicera Semiconductor izicwangciso zokwandisa imveliso yamacandelo angundoqo kwizixhobo zokwenziwa kwe-semiconductor kwihlabathi jikelele. Ngo-2027, sijonge ukuseka umzi-mveliso omtsha wama-20,000 wemitha yesikweri kunye notyalo-mali lulonke lwe-70 yezigidi zeedola. Enye yezinto zethu eziphambili, ii-silicon carbide (SiC) i-wafer carrier, ekwaziwa ngokuba yi-susceptor, ibone inkqubela ebonakalayo. Ke, yintoni kanye kanye le tray ibambe iiwafers?
Kwinkqubo yokwenziwa kwe-wafer, iileya ze-epitaxial zakhiwe kwii-substrates ezithile ze-wafer ukwenza izixhobo. Umzekelo, iileya ze-epitaxial ze-GaAs zilungiswa kwi-silicon substrates yezixhobo ze-LED, iileya ze-SiC epitaxial zikhuliswe kwii-SiC substrates ze-conductive zezicelo zamandla ezifana nee-SBDs kunye ne-MOSFETs, kunye ne-GaN epitaxial layers zakhelwe kwii-semi-insulating ze-SiC substrates zezicelo ze-RF ezifana ne-HEMTs. . Le nkqubo ixhomekeke kakhuluUkubekwa komphunga kwikhemikhali (CVD)izixhobo.
Kwizixhobo ze-CVD, i-substrates ayikwazi ukufakwa ngokuthe ngqo kwintsimbi okanye isiseko esilula se-epitaxial deposition ngenxa yezinto ezahlukeneyo ezifana nokuhamba kwegesi (horizontal, vertical), ukushisa, uxinzelelo, ukuzinza, kunye nokungcola. Ngoko ke, i-susceptor isetyenziselwa ukubeka i-substrate, eyenza i-epitaxial deposition isebenzisa iteknoloji ye-CVD. Le susceptor nguyeI-SiC-coated graphite susceptor.
I-SiC-coated graphite susceptors ziqhele ukusetyenziswa kwi-Metal-Organic Chemical Vapor Deposition (MOCVD) izixhobo zokuxhasa kunye nokutshisa i-crystal-crystal substrates. Ukuzinza kwe-thermal kunye nokufana I-SiC-coated graphite susceptorszibalulekile kumgangatho wokukhula kwemathiriyeli ye-epitaxial, izenza icandelo elingundoqo lezixhobo ze-MOCVD (iinkampani eziphambili zezixhobo ze-MOCVD ezifana neVeeco kunye ne-Aixtron). Okwangoku, iteknoloji ye-MOCVD isetyenziswa ngokubanzi ekukhuleni kwe-epitaxial yeefilimu ze-GaN kwii-LED eziluhlaza ngenxa yokulula kwayo, izinga lokukhula elilawulekayo, kunye nokucoceka okuphezulu. Njengenxalenye ebalulekileyo ye-MOCVD reactor, ii-susceptor yefilimu ye-GaN yokukhula kwe-epitaxialkufuneka ibe nokumelana nobushushu obuphezulu, i-uniform conductivity thermal, ukuzinza kweekhemikhali, kunye nokumelana nokothuka kwe-thermal. Igraphite ihlangabezana nezi mfuno ngokugqibeleleyo.
Njengenxalenye ephambili yezixhobo ze-MOCVD, i-graphite susceptor isekela kwaye ishushu i-single-crystal substrates, echaphazela ngokuthe ngqo ukufana kunye nokuhlanzeka kwezinto zefilimu. Umgangatho wayo uchaphazela ngokuthe ngqo ukulungiswa kwee-epitaxial wafers. Nangona kunjalo, ngokusetyenziswa okwandisiweyo kunye neemeko zokusebenza ezahlukeneyo, ii-graphite susceptors ziguga ngokulula kwaye zithathwa njengezinto ezinokusetyenziswa.
I-MOCVD susceptorskufuneka ube neempawu ezithile zokugquma ukuhlangabezana nezi mfuno zilandelayo:
- -Ukugubungela okuhle:Ukugquma kufuneka kugqume ngokupheleleyo i-graphite susceptor ngoxinaniso oluphezulu ukuthintela ukubola kwindawo yerhasi eyonakalisayo.
- -Amandla okudibanisa okuphezulu:Ukugquma kufuneka kubophe ngamandla kwi-graphite susceptor, ukumelana nemijikelezo emininzi yobushushu obuphezulu kunye nobushushu obuphantsi ngaphandle kokuhluma.
- -Uzinzo lwekhemikhali:Ukugquma kufuneka kuzinzile kwiikhemikhali ukuphepha ukungaphumeleli kwiqondo lokushisa eliphezulu kunye ne-corrosive atmospheres.
I-SiC, kunye ne-corrosion resistance, i-high conductivity ye-thermal, i-thermal shock resistance, kunye nokuzinza kweekhemikhali eziphezulu, yenza kakuhle kwindawo ye-GaN epitaxial. Ukongezelela, i-coefficient yokwandisa i-thermal ye-SiC ifana ne-graphite, okwenza i-SiC ibe yinto ekhethiweyo yokugqoka i-graphite susceptor.
Okwangoku, iintlobo eziqhelekileyo ze-SiC ziquka i-3C, i-4H, kunye ne-6H, nganye ifanelekile kwizicelo ezahlukeneyo. Ngokomzekelo, i-4H-SiC inokuvelisa izixhobo eziphezulu zamandla, i-6H-SiC izinzile kwaye isetyenziselwa izixhobo ze-optoelectronic, ngelixa i-3C-SiC ifana nesakhiwo kwi-GaN, eyenza ukuba ilungele ukuveliswa kwe-GaN epitaxial layer kunye nezixhobo ze-SiC-GaN RF. I-3C-SiC, eyaziwa ngokuba yi-β-SiC, isetyenziswa kakhulu njengefilimu kunye nezinto zokugubungela, okwenza kube yinto ephambili yokugqoka.
Kukho iindlela ezahlukeneyo zokulungiselelaIingubo zeSiC, kubandakanywa i-sol-gel, i-embedding, i-brushing, i-plasma spraying, i-chemical vapor reaction (CVR), kunye ne-chemical vapor deposition (CVD).
Phakathi kwezi, indlela yokubethelela yinkqubo yobushushu obuphezulu bobushushu obuqinileyo. Ngokubeka i-graphite substrate kwi-powder embedding equkethe i-Si kunye ne-C powder kunye ne-sintering kwindawo yegesi ye-inert, iifom ze-SiC zokugqoka kwi-graphite substrate. Le ndlela ilula, kwaye iibhondi zokugubungela kakuhle kunye ne-substrate. Nangona kunjalo, i-coating ayinayo ukufana kobukhulu kwaye inokuba ne-pores, ekhokelela ekunganyangekiyo kwe-oxidation.
Indlela yokuTyaya yokutshiza
Indlela yokutshiza yokugquma ibandakanya ukutshiza imathiriyeli ekrwada ekrwada kumphezulu wegraphite substrate kwaye unyange kwiqondo lobushushu elithile ukwenza isambatho. Le ndlela ilula kwaye ingabizi kakhulu, kodwa ibangela ukudibanisa okubuthathaka phakathi kwe-coating kunye ne-substrate, ukufana kwengubo engafanelekanga, kunye neengubo ezinqabileyo ezinokumelana ne-oxidation ephantsi, efuna iindlela ezincedisayo.
Indlela yokutshiza ye-Ion Beam
Ukutshiza kwe-ion beam kusebenzisa umpu we-ion ukutshiza imathiriyeli etyhidiweyo okanye enyibilikisiweyo kancinane kumphezulu wegraphite substrate, yenze isambatho phezu kokuqina. Le ndlela ilula kwaye ivelisa iingubo ezixineneyo zeSiC. Nangona kunjalo, iingubo ezibhityileyo zinokumelana ne-oxidation ebuthathaka, ihlala isetyenziselwa ukugquma kweSiC edibeneyo ukuphucula umgangatho.
Indlela yeSol-Gel
Indlela ye-sol-gel ibandakanya ukulungiselela i-uniform, isisombululo se-sol esicacileyo, ukugubungela umphezulu we-substrate, kunye nokufumana i-coating emva kokumisa kunye ne-sintering. Le ndlela ilula kwaye ingabizi kakhulu kodwa iphumela kwiingubo ezinokumelana nokutshatyalaliswa kwe-thermal kunye nokuba sengozini yokuqhekeka, ukunciphisa ukusetyenziswa kwayo ngokubanzi.
Isenzo soMphunga weMichiza (CVR)
I-CVR isebenzisa i-Si kunye ne-SiO2 powder kumaqondo aphezulu okushisa ukuvelisa umphunga we-SiO, ophendula kunye ne-carbon material substrate ukwenza i-coating ye-SiC. Isiphumo se-SiC coating bonds ngokuqinileyo kunye ne-substrate, kodwa inkqubo idinga ukushisa okuphezulu kunye neendleko.
Ukubekwa kweMichiza yoMphunga (CVD)
I-CVD yeyona ndlela iphambili yokulungiselela iingubo ze-SiC. Ibandakanya ukuphendulwa kwesigaba segesi kumphezulu wegraphite substrate, apho imathiriyeli ekrwada ingena emzimbeni kunye neekhemikhali, idiphozithi njengengubo yeSiC. I-CVD ivelisa iingubo ze-SiC ezibotshelelwe ngokuqinileyo eziphucula i-oxidation ye-substrate kunye nokumelana nokukhupha. Nangona kunjalo, i-CVD inamaxesha amade okubeka kwaye inokubandakanya iigesi ezinetyhefu.
Imeko yeMarike
Kwimarike ye-graphite susceptor egqunywe nge-SiC, abavelisi bamanye amazwe banokukhokela okubalulekileyo kunye nesabelo esikhulu semarike. I-Semicera yoyisile itekhnoloji ephambili yokukhula kwengubo ye-SiC efanayo kwi-graphite substrates, ibonelela ngezisombululo ezijongana ne-thermal conductivity, i-elastic modulus, ukuqina, iziphene ze-lattice, kunye neminye imiba yomgangatho, ukuhlangabezana ngokupheleleyo neemfuno zezixhobo ze-MOCVD.
Ikamva elizayo
Ishishini le-semiconductor laseTshayina likhula ngokukhawuleza, ngokunyuka kwendawo ye-MOCVD epitaxial izixhobo kunye nokwandisa izicelo. Imarike ye-graphite susceptor efakwe nge-SiC kulindeleke ukuba ikhule ngokukhawuleza.
Ukuqukumbela
Njengecandelo elibalulekileyo kwisixhobo sesemiconductor ehlanganisiweyo, ukulawula ubuchwephesha bemveliso engundoqo kunye nezixhobo zokurhafisa zegraphite ezigqunywe yi-SiC kubaluleke ngobuchule kushishino lwaseTshayina lwesemiconductor. Intsimi ye-graphite susceptor yasekhaya egqunywe nge-SiC iyachuma, nomgangatho wemveliso ufikelela kumanqanaba ngamazwe.Semicerauzama ukuba ngumthengisi ohamba phambili kweli candelo.
Ixesha lokuposa: Jul-17-2024