Uphuhliso kunye nosetyenziso lweSilicon Carbide (SiC)
1. INkulungwane yoTshintsho kwiSiC
Uhambo lwe-silicon carbide (SiC) lwaqala ngo-1893, xa u-Edward Goodrich Acheson wayila i-furnace ye-Acheson, esebenzisa izinto zekhabhoni ukuphumeza ukuveliswa kwemveliso ye-SiC ngokufudumeza kombane we-quartz kunye nekhabhoni. Oku kuqanjwa kwaphawula ukuqala kwe-SiC's industryization kwaye yafumana i-Acheson ipatent.
Ekuqaleni kwenkulungwane yama-20, i-SiC yayisetyenziswa ngokuyintloko njenge-abrasive ngenxa yobunzima bayo obumangalisayo kunye nokumelana nokunxiba. Embindini wenkulungwane yama-20, ukuqhubela phambili kwitekhnoloji ye-chemical vapor deposition (CVD) yavula amathuba amatsha. Abaphandi baseBell Labs, bekhokelwa nguRustum Roy, babeka isiseko se-CVD SiC, ukuphumeza i-SiC yokuqala yokwambathisa kumphezulu wegraphite.
Iminyaka yee-1970 yabona impumelelo enkulu xa i-Union Carbide Corporation isebenzisa igraphite efakwe i-SiC ekukhuleni kwe-epitaxial ye-gallium nitride (GaN) semiconductor materials. Le nkqubela phambili idlale indima ebalulekileyo ekusebenzeni okuphezulu kwe-GaN-based LEDs kunye nelases. Ukutyhubela amashumi eminyaka, iingubo ze-SiC ziye zanda ngaphaya kwee-semiconductors kwizicelo kwi-aerospace, i-automotive, kunye ne-electronics yamandla, ngenxa yokuphuculwa kweendlela zokuvelisa.
Namhlanje, izinto ezintsha ezifana nokutshiza kwe-thermal, i-PVD, kunye ne-nanotechnology ziphucula ngakumbi ukusebenza kunye nokusetyenziswa kwee-coatings ze-SiC, zibonisa amandla ayo kwiinkalo zokusika.
2. Ukuqonda iSiC's Crystal Structures kunye nokuSetyenziswa
I-SiC iqhayisa ngeepolytypes ze-200, ezihlelwe ngamalungiselelo e-athomu kwi-cubic (3C), i-hexagonal (H), kunye ne-rhombohedral (R) izakhiwo. Phakathi kwezi, i-4H-SiC kunye ne-6H-SiC zisetyenziswa ngokubanzi kumandla aphezulu kunye nezixhobo ze-optoelectronic, ngokulandelanayo, ngelixa i-β-SiC ixabiswa ngenxa ye-conductivity ephezulu ye-thermal, ukumelana nokugqoka kunye nokuchasana nokugqwala.
β-SiC'siimpawu ezizodwa, ezifana conductivity thermal of120-200 W/m·Kkunye ne-thermal yokwandisa i-coefficient ehambelana ngokusondeleyo negraphite, yenza ukuba ibe yinto ekhethiweyo yokugquma komhlaba kwisixhobo se-wafer epitaxy.
3. Iingubo ze-SiC: Iipropati kunye neendlela zokuLungisa
Iingubo ze-SiC, ngokuqhelekileyo i-β-SiC, zisetyenziswa ngokubanzi ukuphucula iipropati ezingaphezulu njengokuqina, ukuxhathisa ukunxiba, kunye nokuzinza kwe-thermal. Iindlela eziqhelekileyo zokulungiselela ziquka:
- Ukubekwa kweMichiza yoMphunga (CVD):Ibonelela ngeengubo ezikumgangatho ophezulu kunye nokunamathela okugqwesileyo kunye nokufana, ezifanelekileyo kwii-substrates ezinkulu kunye ezinzima.
- Ukubekwa Komphunga Wasemzimbeni (PVD):Inikezela ngolawulo oluchanekileyo malunga nokubunjwa kwengubo, efanelekileyo kwizicelo ezichanekileyo eziphezulu.
- Ubuchwephesha bokutshiza, i-Electrochemical Deposition, kunye ne-Slurry Coating: Isebenza njengezinye iindlela ezingabizi kakhulu kwizicelo ezithile, nangona kukho imida eyohlukeneyo yokunamathela kunye nokufana.
Indlela nganye ikhethwa ngokusekelwe kwiimpawu ze-substrate kunye neemfuno zesicelo.
4. I-SiC-Coated Graphite Susceptors kwi-MOCVD
I-SiC-coated graphite susceptors ziyimfuneko kwi-Metal Organic Chemical Vapor Deposition (MOCVD), inkqubo ephambili kwi-semiconductor kunye ne-optoelectronic material production.
Ezi susceptors zibonelela ngenkxaso eyomeleleyo yokukhula kwefilimu ye-epitaxial, iqinisekisa ukuzinza kwe-thermal kunye nokunciphisa ukungcoliswa kokungcola. I-coating ye-SiC iphinda ikhulise ukuxhathisa kwe-oxidation, iipropati ezingaphezulu, kunye nomgangatho we-interface, eyenza ulawulo oluchanekileyo ngexesha lokukhula kwefilimu.
5. Ukuqhubela phambili kwiKamva
Kwiminyaka yakutshanje, iinzame ezibalulekileyo zijoliswe ekuphuculeni iinkqubo zemveliso ye-SiC-coated graphite substrates. Abaphandi bagxile ekwandiseni ubunyulu bokwambathisa, ukufana, kunye nobomi ngelixa behlisa iindleko. Ukongeza, ukuphononongwa kwezinto ezintsha ezifanatantalum carbide (TaC) iinguboinikeza uphuculo olunokubakho kwi-thermal conductivity kunye nokumelana nokubola, ukuvula indlela yezisombululo zesizukulwana esilandelayo.
Njengoko imfuno ye-SiC-coated graphite susceptors iqhubeka nokukhula, inkqubela phambili kwimveliso ekrelekrele kunye nemveliso yomgangatho woshishino iya kuxhasa ngakumbi uphuhliso lweemveliso ezikumgangatho ophezulu ukuhlangabezana neemfuno eziguqukayo zesemiconductor kunye ne-optoelectronics industry.
Ixesha lokuposa: Nov-24-2023