1. Isishwankathelo
Ukufudumeza, okwakwaziwa ngokuba yi-thermal processing, kubhekiselele kwiinkqubo zokuvelisa ezisebenza kumaqondo obushushu aphezulu, ngokuqhelekileyo aphezulu kunendawo yokunyibilika kwe-aluminium.
Inkqubo yokufudumeza idla ngokuqhutyelwa kwisithando somlilo esiphezulu kwaye ibandakanya iinkqubo eziphambili ezifana ne-oxidation, ukusabalalisa ukungcola, kunye nokudibanisa ukulungiswa kwe-crystal defect kwi-semiconductor yokuvelisa.
I-Oxidation: Yinkqubo apho i-silicon wafer ibekwe kwi-atmosphere ye-oxidants efana ne-oxygen okanye umphunga wamanzi kunyango lobushushu obuphezulu, obangela ukusabela kweekhemikhali kumphezulu we-silicon wafer ukwenza ifilimu ye-oxide.
Ukusasazwa kokungcola: kubhekisa kusetyenziso lwemigaqo yokusasazwa kwe-thermal phantsi kweemeko zobushushu obuphezulu ukwazisa izinto ezingacocekanga kwi-silicon substrate ngokweemfuno zenkqubo, ukuze ibe nokusasazwa koxinzelelo oluthile, ngaloo ndlela itshintsha iipropathi zombane ze-silicon.
I-Anealing ibhekisa kwinkqubo yokufudumeza i-silicon wafer emva kofakelo lwe-ion ukulungisa iziphene zelathisi ezibangelwa kukufakelwa kwe-ion.
Kukho iintlobo ezintathu ezisisiseko zezixhobo ezisetyenziselwa i-oxidation / ukusasazwa / ukudibanisa:
- Isithando somlilo esithe tye;
- Iziko elithe nkqo;
- Isithando somlilo esikhawulezayo: izixhobo zokunyanga ukushisa ngokukhawuleza
Iinkqubo zokunyanga ubushushu bemveli ikakhulu zisebenzisa unyango lwexesha elide lobushushu obuphezulu ukuphelisa umonakalo obangelwa kukufakelwa kwe-ion, kodwa ukungonakali kwayo kukushenxiswa kwesiphene okungaphelelanga kunye nokusebenza okuphantsi kokusebenza kokungcola okumiliselweyo.
Ukongeza, ngenxa yobushushu obuphezulu be-anneal kunye nexesha elide, ukusasazwa kokungcola kunokwenzeka ukuba kwenzeke, okubangela ubuninzi bokungcola ukuba busasazeke kwaye lusilele ukuhlangabezana neemfuno zedibano ezinzulu kunye nokusasazwa kobumdaka obumxinwa.
Ukufakwa ngokukhawuleza kwe-thermal annealing of ion-implanted wafers usebenzisa i-rapeed thermal processing (RTP) izixhobo yindlela yonyango lobushushu elifudumeza lonke iwafa kubushushu obuthile (ngokubanzi 400-1300 °C) ngexesha elifutshane kakhulu.
Xa kuthelekiswa ne-annealing yokufudumala kwesithando somlilo, ineenzuzo zohlahlo lwabiwo-mali oluncinci, uluhlu oluncinci lokuhamba kokungcola kwindawo ye-doping, ukungcola okuncinci kunye nexesha elifutshane lokucwangcisa.
Inkqubo yokufakelwa kwe-thermal ekhawulezayo inokusebenzisa imithombo eyahlukeneyo yamandla, kwaye uluhlu lwexesha lokutshisa lubanzi kakhulu (ukusuka kwi-100 ukuya kwi-10-9s, njengokufakwa kwesibane, ukukhutshwa kwe-laser, njl.). Inokuthi isebenze ngokupheleleyo ukungcola ngelixa icinezela ngokufanelekileyo ukwabiwa kokungcola. Okwangoku isetyenziswa ngokubanzi kwiinkqubo zokwenziwa kwesekethe edibeneyo enesiphelo esine-wafer diameters enkulu kune-200mm.
2. Inkqubo yokufudumeza okwesibini
2.1 Inkqubo ye-oxidation
Kwinkqubo yokuvelisa isekethe edibeneyo, kukho iindlela ezimbini zokwenza iifilimu ze-silicon oxide: i-oxidation ye-thermal kunye ne-deposition.
Inkqubo ye-oxidation ibhekisa kwinkqubo yokwenza i-SiO2 kumphezulu we-silicon wafers nge-thermal oxidation. Ifilimu ye-SiO2 eyenziwe yi-oxidation ye-thermal isetyenziswa ngokubanzi kwinkqubo yokuvelisa isekethe edibeneyo ngenxa yeempawu zayo eziphezulu zokugquma umbane kunye nokusebenza kwenkqubo.
Ezona zicelo zibalulekileyo zezi zilandelayo:
- Khusela izixhobo kwimikrwelo kunye nongcoliseko;
- Ukunciphisa intsimi yodwa yabathwali abahlawuliswayo (i-surface passivation);
- Izinto ze-Dielectric kwi-oxide yesango okanye izakhiwo zeeseli zokugcina;
- Implant masking kwi-doping;
- Umaleko we-dielectric phakathi kweengqimba zetsimbi eziqhubayo.
(1)Ukukhuselwa kwesixhobo kunye nokwahlukaniswa
I-SiO2 ekhuliswe kumphezulu we-wafer (i-silicon wafer) inokusebenza njengomaleko osebenzayo wokuthintela ukwahlula nokukhusela izixhobo ezibuthathaka ngaphakathi kwesilicon.
Ngenxa yokuba i-SiO2 yinto enzima kunye ne-non-porous (dense), ingasetyenziselwa ukwahlula ngokufanelekileyo izixhobo ezisebenzayo kumphezulu we-silicon. Umaleko onzima we-SiO2 uya kukhusela i-silicon wafer kwi-scratches kunye nomonakalo onokuthi wenzeke ngexesha lenkqubo yokuvelisa.
(2)Intshukumo yomphezulu
I-Surface passivation Inzuzo enkulu ye-SiO2 ekhuliswe ngokufudumeleyo kukuba inokunciphisa ingxinano yomphezulu we-silicon ngokucinezela amabhondi ayo ajingayo, isiphumo esaziwa ngokuba yi-surface passivation.
Ikhusela ukuthotywa kombane kwaye inciphisa indlela yokuvuza kwangoku okubangelwa ngumswakama, i-ion okanye ezinye izinto ezingcolileyo zangaphandle. Umaleko onzima we-SiO2 ukhusela i-Si kwimikrwelo kunye nomonakalo wenkqubo onokuthi wenzeke ngexesha lokuveliswa kwemveliso.
Umaleko we-SiO2 okhule kumphezulu we-Si unokubophelela ungcoliseko olusebenza ngombane (ungcoliseko lwe-ion yeselula) kumphezulu we-Si. I-Passivation ikwabalulekile ekulawuleni ukuvuza kwangoku kwezixhobo zokudityaniswa kunye nokukhula kweeoksidi zesango ezizinzileyo.
Njengomgangatho ophezulu wokudlula, umaleko we-oxide uneemfuno ezisemgangathweni ezifana nobukhulu obufanayo, akukho mibhobho kunye ne-voids.
Enye into ekusebenziseni umaleko we-oxide njengomaleko we-Si surface passivation layers bubunzima be-oxide layer. Umaleko we-oxide kufuneka ube ngqindilili ngokwaneleyo ukukhusela umaleko wesinyithi ekutshajini ngenxa yokuqokelela intlawulo kumphezulu wesilicon, ofana nokugcinwa kwentlawulo kunye neempawu zokuqhekeka kwee-capacitors eziqhelekileyo.
I-SiO2 ikwanayo ne-coefficient efanayo kakhulu yokwandiswa kwe-thermal kwi-Si. Ii-Silicon wafers zanda ngexesha leenkqubo zokushisa okuphezulu kunye nenkontileka ngexesha lokupholisa.
I-SiO2 iyanda okanye iikhontrakthi ngesantya esisondele kakhulu kuleyo ye-Si, enciphisa i-wafer ye-silicon ngexesha lenkqubo ye-thermal. Oku kunqanda kwakhona ukuhlukana kwefilimu ye-oxide kwi-silicon surface ngenxa yoxinzelelo lwefilimu.
(3)Isango le-oxide dielectric
Kweyona nto isetyenziswa ngokuqhelekileyo kwaye ibalulekileyo isango le-oxide yesakhiwo kwitekhnoloji ye-MOS, umaleko obhityileyo weoksidi usetyenziswa njengesixhobo se-dielectric. Ekubeni isango le-oxide yesango kunye ne-Si ngaphantsi zineempawu zomgangatho ophezulu kunye nokuzinza, isango le-oxide yesango lifunyanwa ngokubanzi ngokukhula kwe-thermal.
I-SiO2 inamandla aphezulu e-dielectric (107V / m) kunye nokumelana okuphezulu (malunga ne-1017Ω · cm).
Isitshixo ekuthembekeni kwezixhobo ze-MOS yingqibelelo yomgangatho we-oxide yesango. Isakhiwo sesango kwizixhobo zeMOS silawula ukuhamba kwangoku. Ngenxa yokuba le oxide isisiseko somsebenzi wemicrochips esekwe kwitekhnoloji yempembelelo yentsimi,
Ngoko ke, umgangatho ophezulu, ukufana kwefilimu ebalaseleyo kunye nokungabikho kokungcola zizinto ezisisiseko. Naluphi na ungcoliseko olunokunciphisa umsebenzi wesakhiwo se-oxide yesango kufuneka ilawulwe ngokungqongqo.
(4)Isithintelo seDoping
I-SiO2 ingasetyenziswa njengomaleko osebenzayo wokugquma wokukhetha idoping yomphezulu wesilicon. Nje ukuba umaleko we-oxide wenziwe kumphezulu wesilicon, i-SiO2 kwindawo ecacileyo yemaski ixhonywe ukwenza ifestile apho imathiriyeli yedoping inokungena kwi-silicon wafer.
Apho kungekho zifestile, ioksidi inokukhusela umphezulu wesilicon kwaye ithintele ukungcola ekusasazeni, ngaloo ndlela ivumela ukufakelwa kokungcola okukhethiweyo.
I-Dopants ihamba ngokucothayo kwi-SiO2 xa kuthelekiswa ne-Si, ngoko ke kuphela umaleko obhityileyo we-oxide ofunekayo ukuvala ii-dopants (qaphela ukuba eli zinga lixhomekeke kwiqondo lokushisa).
Umaleko obhityileyo we-oksidi (umzekelo, i-150 Å thick) nawo unokusetyenziswa kwiindawo apho kufuneka ukufakelwa kwe-ion, enokusetyenziswa ukunciphisa umonakalo kumphezulu wesilicon.
Kwakhona kuvumela ulawulo olungcono lobunzulu be-junction ngexesha lokufakelwa kokungcola ngokunciphisa umphumo womzila. Emva kokufakelwa, i-oksidi inokususwa ngokukhethiweyo nge-hydrofluoric acid ukwenza umphezulu we-silicon ube mcaba kwakhona.
(5)Umaleko we-Dielectric phakathi kweengqimba zetsimbi
I-SiO2 ayiqhubeki umbane phantsi kweemeko eziqhelekileyo, ngoko ke i-insulator esebenzayo phakathi kweengqimba zetsimbi kwii-microchips. I-SiO2 inokuthintela iisekethe ezimfutshane phakathi komgangatho wetsimbi ephezulu kunye nomgangatho ophantsi wetsimbi, njenge-insulator kwi-wire inokuthintela imijikelezo emfutshane.
Imfuno esemgangathweni ye-oxide kukuba ayinama-pinholes kunye ne-voids. Ihlala idotshwa ukufumana ulwelo olusebenzayo ngakumbi, olunokunciphisa ngcono ukusasazwa kosulelo. Ngokuqhelekileyo ifunyenwe ngokubeka umphunga wekhemikhali kunokukhula kwe-thermal.
Ngokuxhomekeke kwigesi yokusabela, inkqubo ye-oxidation ihlala yohlulwe ibe:
- Ioksijini eyomileyo: Si + O2→SiO2;
- Ukufakwa kweoksijini emanzi: 2H2O (umphunga wamanzi) + Si→SiO2+2H2;
- I-Chlorine-doped oxidation: Igesi ye-chlorine, efana ne-hydrogen chloride (HCl), i-dichlorethylene DCE (C2H2Cl2) okanye i-derivatives yayo, yongezwa kwi-oksijini ukuphucula izinga le-oxidation kunye nomgangatho we-oxide layer.
(1)Inkqubo ye-oksijini eyomileyo: Iimolekyuli ze-oksijini kwigesi yokusabela zisasazeke kwi-oxide esele yenziwe umaleko, ifikelele kwi-interface phakathi kwe-SiO2 kunye ne-Si, iphendule nge-Si, kwaye yenza umaleko we-SiO2.
I-SiO2 elungiselelwe yi-oxidation ye-oksijeni eyomileyo inesakhiwo esixineneyo, ubukhulu obufanayo, isakhono esinamandla sokufihla inaliti kunye nokusabalalisa, kunye nokuphindaphinda inkqubo ephezulu. Ububi bayo kukuba izinga lokukhula licotha.
Le ndlela isetyenziswa ngokubanzi kudidi oluphezulu lwe-oxidation, olufana nesango le-dielectric oxidation, i-oxidation yesithinteli esicekethekileyo somaleko, okanye ukuqalisa i-oxidation kunye nokuphelisa i-oxidation ngexesha elishinyeneyo le-buffer layer oxidation.
(2)Inkqubo ye-oksijini emanzi: Umphunga wamanzi unokuthuthwa ngokuthe ngqo kwioksijini, okanye unokufunyanwa ngokusabela kwehydrogen neoksijini. Isantya se-oxidation sinokutshintshwa ngokuhlengahlengisa umlinganiselo woxinzelelo lwe-hydrogen okanye umphunga wamanzi kwi-oxygen.
Qaphela ukuba ukuqinisekisa ukhuseleko, umlinganiselo we-hydrogen kwi-oksijini akufanele udlule i-1.88: 1. I-oksijini emanzi i-oxidation ibangelwa ubukho be-oksijini kunye nomphunga wamanzi kwi-reaction gas, kwaye umphunga wamanzi uya kubola ube yi-hydrogen oxide (H O) kumaqondo obushushu aphezulu.
Izinga lokusasazwa kwe-hydrogen oxide kwi-silicon oxide likhawuleza kakhulu kunolo lwe-oxygen, ngoko ke umlinganiselo we-oksijini omanzi umalunga nomyalelo omnye wobukhulu obuphezulu kunomlinganiselo wokomileyo we-oxygen oxidation.
(3)Inkqubo ye-chlorine-doped oxidation: Ukongeza kwi-oxidation ye-oksijeni eyomileyo kunye ne-oksijini emanzi, igesi ye-chlorine, njenge-hydrogen chloride (HCl), i-dichlorethylene DCE (C2H2Cl2) okanye i-derivatives yayo, inokongezwa kwi-oksijini ukuphucula izinga le-oxidation kunye nomgangatho we-oxide layer. .
Esona sizathu siphambili sokunyuka kwezinga le-oxidation kukuba xa i-chlorine yongezwa kwi-oxidation, kungekhona nje ukuba i-reactant iqulethe umphunga wamanzi onokukhawulezisa i-oxidation, kodwa i-chlorine iphinda iqokelele kufuphi ne-interface phakathi kwe-Si kunye ne-SiO2. Phambi kweoksijini, iikhompawundi ze-chlorosilicon ziguqulwa ngokulula zibe yisilicon oxide, enokuthi ikhuphe i-oxidation.
Esona sizathu siphambili sokuphuculwa komgangatho we-oxide ye-athom yeklorini kwi-oxyde layer inokucoca umsebenzi we-sodium ion, ngaloo ndlela inciphisa iziphene ze-oxidation eziveliswa yi-sodium ion ukungcoliswa kwezixhobo kunye nenkqubo yezinto eziluhlaza. Ngoko ke, i-chlorine doping ibandakanyeka kwiinkqubo ezininzi ze-oksijini ezomileyo.
2.2 Inkqubo yokusasazwa
Ukusasazwa kwemveli kubhekiselele ekugqithisweni kwezinto ukusuka kwiindawo eziphakamileyo zoxinaniso ukuya kwiindawo ezinoxinzelelo olusezantsi de zisasazwe ngokulinganayo. Inkqubo yokusasaza ilandela umthetho kaFick. Ukusasazwa kunokuthi kwenzeke phakathi kwezinto ezimbini okanye ngaphezulu, kwaye ukugxininiswa kunye nokuhluka kobushushu phakathi kweendawo ezahlukeneyo kuqhuba ukuhanjiswa kwezinto ukuya kwimeko yokulinganisa okufanayo.
Enye yezona zinto zibalulekileyo zezixhobo ze-semiconductor kukuba ukuqhuba kwazo kunokulungelelaniswa ngokongeza iintlobo ezahlukeneyo okanye ukugxilwa kweedopants. Kwimveliso yesekethe edibeneyo, le nkqubo idla ngokufezekiswa nge-doping okanye iinkqubo zokusasaza.
Ngokuxhomekeke kwiinjongo zokuyila, izixhobo ze-semiconductor ezifana ne-silicon, i-germanium okanye i-III-V iikhompawundi zinokufumana iipropati ezimbini ezihlukeneyo ze-semiconductor, uhlobo lwe-N okanye uhlobo lwe-P, nge-doping kunye nokungcola kwabanikeli okanye ukungcola kommkeli.
I-Semiconductor doping yenziwa ikakhulu ngeendlela ezimbini: ukusasazwa okanye ukufakelwa kwe-ion, nganye ineempawu zayo:
I-doping ye-diffusion ayibizi kakhulu, kodwa ugxininiso kunye nobunzulu bezinto ze-doping azikwazi ukulawulwa ngokuchanekileyo;
Ngelixa ukufakelwa kwe-ion kubiza kakhulu, kuvumela ulawulo oluchanekileyo lweeprofayili zoxinaniso lwe-dopant.
Phambi kweminyaka yoo-1970, ubungakanani bemizobo edityanisiweyo yesekethe yayiku-odolo we-10μm, kwaye itekhnoloji yesiqhelo yokusasazwa kwe-thermal yayisetyenziselwa ukwenza idoping.
Inkqubo yokusabalalisa isetyenziselwa ukuguqula izinto ze-semiconductor. Ngokusasaza izinto ezahlukeneyo kwizinto ze-semiconductor, ukuhanjiswa kwazo kunye nezinye izinto ezibonakalayo zingatshintshwa.
Ngokomzekelo, ngokusasaza i-trivalent element boron kwi-silicon, i-semiconductor yohlobo lwe-P yenziwa; nge-doping pentavalent elements phosphorus okanye arsenic, i-N-type semiconductor yenziwa. Xa i-semiconductor yohlobo lwe-P enemingxuma emininzi idibana ne-N-type semiconductor enee-electron ezininzi, i-PN junction yenziwa.
Njengoko ubukhulu beempawu bucutheka, inkqubo yokusasazwa kwe-isotropic yenza ukuba i-dopants isasazeke kwelinye icala le-shield oxide layer, ibangela iibhulukhwe ezimfutshane phakathi kwemimandla emeleneyo.
Ngaphandle kokusetyenziswa okukhethekileyo (okufana nokusasazwa kwexesha elide ukwenza iindawo ezixhathisayo zombane ophezulu ezisasazwe ngokulinganayo), inkqubo yokusasaza iye yathatyathelwa indawo ngofakelo lwe-ion.
Nangona kunjalo, kwisizukulwana setekhnoloji esingaphantsi kwe-10nm, ekubeni ubungakanani beFin kwisixhobo se-fin-fin-effect transistor (FinFET) sincinci kakhulu, ukufakelwa kwe-ion kuya konakalisa isakhiwo sayo esincinci. Ukusetyenziswa kwenkqubo yokusasazwa komthombo oqinileyo kunokusombulula le ngxaki.
2.3 Inkqubo yokwehlisa umgangatho
Inkqubo yokufunxa ikwabizwa ngokuba yi-thermal annealing. Inkqubo kukubeka i-silicon wafer kwindawo yokushisa ephezulu kwixesha elithile lokutshintsha i-microstructure phezu komhlaba okanye ngaphakathi kwe-silicon wafer ukufezekisa injongo ethile yenkqubo.
Ezona parameters zibaluleke kakhulu kwinkqubo ye-annealing bubushushu kunye nexesha. Ukuphakama kweqondo lokushisa kunye nexesha elide, liphezulu uhlahlo lwabiwo-mali lwe-thermal.
Kwinkqubo yokwenziwa kwesekethe edibeneyo, uhlahlo lwabiwo-mali lwe-thermal lulawulwa ngokungqongqo. Ukuba kukho iinkqubo ezininzi ze-annealing kwinkqubo yokuhamba, uhlahlo lwabiwo-mali lwe-thermal lunokubonakaliswa njengeyona ndawo iphezulu yonyango lobushushu oluninzi.
Nangona kunjalo, kunye ne-miniaturization ye-process nodes, uhlahlo lwabiwo-mali oluvumelekileyo lwe-thermal kuyo yonke inkqubo luba luncinci kwaye lube luncinci, oko kukuthi, ukushisa kwenkqubo ye-thermal yokushisa kuya kuba ngaphantsi kwaye ixesha liba lifutshane.
Ngokuqhelekileyo, inkqubo yokucoca idityaniswe kunye nokufakelwa kwe-ion, ukufakwa kwefilimu encinci, ukubunjwa kwensimbi ye-silicidi kunye nezinye iinkqubo. Eyona nto ixhaphakileyo kukufakwa kwe-thermal emva kofakelo lwe-ion.
Ukufakelwa kwe-ion kuya kuba nefuthe kwi-athomu ye-substrate, kubangele ukuba bahlukane nesakhiwo sokuqala se-lattice kwaye bonakalise i-substrate lettice. I-Thermal annealing inokulungisa umonakalo weletisi owenziwe kukufakelwa kwe-iyoni kwaye kunokuhambisa iiathom zokungcola ezimiliselweyo ukusuka kwizithuba zeelethisi ukuya kwiindawo zeletiyisi, ngokwenza njalo zisebenze.
Iqondo lobushushu elifunekayo ukulungisa umonakalo kwilathisi limalunga nama-500°C, kwaye ubushushu obufunekayo ukuze kusebenze ubumdaka bumalunga ne-950°C. Ngokwethiyori, okukhona ixesha lokuvalela kunye nokunyuka kwamaqondo obushushu, kokukhona linyuka izinga lokuvula lokungcola, kodwa liphezulu kakhulu uhlahlo lwabiwo-mali olushushu luya kukhokelela kukusasazwa okugqithisileyo kobumdaka, okwenza inkqubo ingalawuleki kwaye ekugqibeleni ibangele ukuthotywa kwesixhobo kunye nokusebenza kwesekethe.
Ke ngoko, ngophuhliso lwetekhnoloji yokuvelisa, i-annealing yesithando yexesha elide iye yathatyathelwa indawo yi-rapid thermal annealing (RTA).
Kwinkqubo yokuvelisa, ezinye iifilimu ezithile kufuneka zingene kwinkqubo yokufakwa kwe-thermal annealing emva kokufakwa ukuze kutshintshe iimpawu ezithile zomzimba okanye zekhemikhali zefilimu. Umzekelo, ifilimu ekhululekileyo iba yixinene, itshintsha izinga layo elomileyo okanye elimanzi;
Enye inkqubo ye-annealing esetyenziswa ngokuqhelekileyo yenzeka ngexesha lokuqulunqwa kwe-metal silicide. Iifilimu zesinyithi ezifana ne-cobalt, i-nickel, i-titanium, njl.
Iintsimbi ezithile zenza izigaba ezahlukeneyo ze-alloy phantsi kweemeko ezahlukeneyo zobushushu. Ngokuqhelekileyo, kuthenjwa ukuba kuqulunqwe isigaba se-alloy kunye nokuchasana okuncinci kunye nokuxhatshazwa komzimba ngexesha lenkqubo.
Ngokweemfuno ezahlukeneyo zohlahlo lwabiwo-mali lwe-thermal, inkqubo yokufunxa yahlulwe ibe yi-annealing yobushushu obuphezulu kunye nokufakwa kwe-thermal annealing.
- Ubushushu obuphezulu betyhubhu yokucima umlilo:
Yindlela yesiqhelo yokufunxa enobushushu obuphezulu, ixesha elide lokufunxa kunye nohlahlo lwabiwo-mali oluphezulu.
Kwezinye iinkqubo ezikhethekileyo, ezinje ngetekhnoloji yokwahlukanisa inaliti ye-oksijini yokulungiselela i-SOI substrates kunye neenkqubo zokusasazwa okunzulu, isetyenziswa ngokubanzi. Iinkqubo ezinjalo ngokubanzi zifuna uhlahlo lwabiwo-mali oluphezulu lwe-thermal ukufumana i-lattice epheleleyo okanye ukusabalalisa okufanayo kokungcola.
- Rapid Thermal Annealing:
Yinkqubo yokusetyenzwa kwee-wafers ze-silicon ngokufudumeza okukhawulezileyo / ukupholisa kunye nokuhlala okufutshane kwiqondo lobushushu ekujoliswe kulo, ngamanye amaxesha ikwabizwa ngokuba yi-Rapid Thermal Processing (RTP).
Kwinkqubo yokwenza ijunction ye-ultra-shallow, i-annealing ye-thermal ekhawulezayo ifezekisa ukulungelelaniswa kokulungelelaniswa phakathi kokulungiswa kwe-lattice defect, ukusebenza kokungcola, kunye nokunciphisa ukusasazwa kokungcola, kwaye kubaluleke kakhulu kwinkqubo yokwenziwa kweendawo zetekhnoloji eziphezulu.
Ukunyuka kwamaqondo obushushu / inkqubo yokuwa kunye nokuhlala okufutshane kwiqondo lobushushu ekujoliswe kulo kunye zenza uhlahlo lwabiwo-mali lwe-thermal olukhawulezayo lwe-thermal annealing.
I-annealing yesiqhelo ekhawulezayo yobushushu inobushushu obumalunga ne-1000°C kwaye ithatha imizuzwana. Kwiminyaka yamva nje, iimfuno zokufakwa ngokukhawuleza kwe-thermal annealing ziye zaqina ngakumbi, kwaye i-flash annealing, i-spike annealing, kunye ne-laser annealing ziye zakhula ngokuthe ngcembe, kunye namaxesha okubamba afikelela kwi-milliseconds, kwaye ade athande ukukhula ukuya kwi-microseconds kunye ne-sub-microseconds.
3 . Izixhobo ezintathu zenkqubo yokufudumeza
3.1 Izixhobo zokusasaza kunye ne-oxidation
Inkqubo yokusasaza ikakhulu isebenzisa umgaqo wokusasazwa kwe-thermal phantsi kobushushu obuphezulu (ngokuqhelekileyo i-900-1200℃) iimeko ukubandakanya izinto ezingacocekanga kwi-silicon substrate kubunzulu obufunekayo ukuyinika usasazo oluthile loxinaniso, ukuze utshintshe iimpawu zombane izinto kunye nokwenza isakhiwo sesixhobo se-semiconductor.
Kwi-silicon iteknoloji yesekethe edibeneyo, inkqubo yokusabalalisa isetyenziselwa ukwenza i-PN junctions okanye amacandelo afana ne-resistors, i-capacitors, i-interconnect wiring, i-diode kunye ne-transistors kwiisekethe ezidibeneyo, kwaye isetyenziselwa ukuhlukaniswa phakathi kwamacandelo.
Ngenxa yokungakwazi ukulawula ngokuchanekileyo ukuhanjiswa koxinaniso lwe-doping, inkqubo yokusasazwa ngokuthe ngcembe yatshintshwa yinkqubo ye-ion yokufakelwa kwe-doping ekwenzeni iisekethe ezidityanisiweyo ezine-diameter ye-wafer eyi-200 mm nangaphezulu, kodwa isixa esincinci sisasetyenziswa kwi-heavy. iinkqubo zedoping.
Izixhobo zokusasaza zesiNtu zizitofu zosasazo ezithe tyaba, kwaye kukwakho nenani elincinci leziko losasazo oluthe nkqo.
Isithando somlilo esithe tye:
Sisixhobo sokunyanga ubushushu esisetyenziswa ngokubanzi kwinkqubo yokusasazwa kweesekethe ezidityanisiweyo ezine-wafer diameter engaphantsi kwe-200mm. Iimpawu zayo kukuba umzimba wesithando somlilo, ityhubhu yokusabela kunye ne-quartz yesikhephe esithwele ama-wafers zonke zibekwe ngokuthe tye, ngoko ke ineempawu zenkqubo yokufana okuhle phakathi kwee-wafers.
Ayisiyiyo kuphela enye yezixhobo eziphambili zesiphelo kumgca wemveliso yesekethe edibeneyo, kodwa ikwasetyenziswa ngokubanzi ekusasazeni, i-oxidation, i-annealing, i-alloying kunye nezinye iinkqubo kumashishini afana nezixhobo ezidityanisiweyo, izixhobo zombane zombane, izixhobo ze-optoelectronic kunye nemicu yokubona. .
Iziko losasazo oluthe nkqo:
Ngokubanzi ibhekisa kwibhetshi yonyango lobushushu besixhobo esisetyenziswa kwinkqubo edityanisiweyo yesekethe yeewafer ezinobubanzi obuyi-200mm kunye ne-300mm, eyaziwa ngokuba sisithando somlilo esithe nkqo.
Iimpawu zesakhiwo sesithando somlilo esithe nkqo kukuba umzimba weziko lokufudumeza, ityhubhu yokusabela kunye nesikhephe sequartz esithwele iwafa zonke zibekwe ngokuthe nkqo, kwaye iwafer ibekwe ngokuthe tye. Ineempawu zokufana okulungileyo ngaphakathi kwe-wafer, iqondo eliphezulu lokuzenzekelayo, kunye nokusebenza kwenkqubo ezinzileyo, enokuthi ihlangabezane neemfuno zemigca yokuvelisa imveliso yesekethe enkulu.
I-furnace yokusabalalisa i-vertical diffusion yenye yezixhobo ezibalulekileyo kwi-semiconductor edibeneyo yokuvelisa umgca wokuvelisa isiphaluka kwaye isetyenziswa ngokuqhelekileyo kwiinkqubo ezihambelanayo kwiinkalo zezixhobo zombane zamandla (IGBT) njalo njalo.
Isithando somlilo esithe nkqo sisebenza kwiinkqubo ze-oxidation ezifana ne-oksijini eyomileyo, i-hydrogen-oxygen synthesis oxidation, i-silicon oxynitride oxidation, kunye neenkqubo zokukhula kwefilimu ezincinci ezifana ne-silicon dioxide, i-polysilicon, i-silicon nitride (i-Si3N4), kunye ne-atomic layer deposition.
Ikwasetyenziswa ngokuqhelekileyo kubushushu obuphezulu be-annealing, i-copper annealing kunye ne-alloying systems. Ngokumalunga nenkqubo yokusasazwa, iziko lokusasaza ngokuthe nkqo ngamanye amaxesha likwasetyenziswa kwiinkqubo ezinzima zedoping.
3.2 Izixhobo zokurhola ezikhawulezayo
Isixhobo se-Rapid Thermal Processing (RTP) sisixhobo sokunyanga ukushisa kwe-wafer enye enokunyusa ngokukhawuleza ukushisa kwe-wafer kwiqondo lokushisa elifunwa yinkqubo (200-1300 ° C) kwaye inokupholisa ngokukhawuleza. Izinga lokufudumeza / lokupholisa ngokuqhelekileyo yi-20-250 ° C / s.
Ukongeza kuluhlu olubanzi lwemithombo yamandla kunye nexesha lokucoca, izixhobo ze-RTP zikwanazo nezinye iinkqubo zokusebenza ezigqwesileyo, ezinjengolawulo olugqwesileyo lohlahlo lwabiwo-mali lobushushu kunye nokufana komphezulu ongcono (ingakumbi amaqhekeza amakhulu), ukulungisa umonakalo owenziwe yi-ion, kwaye amagumbi amaninzi angaqhuba amanyathelo enkqubo ezahlukeneyo ngaxeshanye.
Ukongezelela, izixhobo ze-RTP zinokuguquguquka kwaye ziguqule ngokukhawuleza kwaye zilungelelanise iigesi zenkqubo, ukwenzela ukuba iinkqubo ezininzi zokunyanga ukushisa zinokugqitywa kwinkqubo efanayo yonyango lokushisa.
Izixhobo ze-RTP zisetyenziswa kakhulu kwi-rapid thermal annealing (RTA). Emva kokufakelwa kwe-ion, izixhobo ze-RTP ziyadingeka ukuze kulungiswe umonakalo obangelwa kukufakelwa kwe-ion, kusebenze iiprotoni ezine-doped kunye nokuthintela ngokufanelekileyo ukusasazwa kokungcola.
Ngokubanzi, iqondo lobushushu bokulungisa iziphene zelathisi limalunga ne-500°C, ngelixa i-950°C ifuneka ukuze kusebenze ii-athom ezidayiweyo. Ukusebenza kokungcola kuhambelana nexesha kunye nobushushu. Ixesha elide kwaye iqondo lokushisa liphezulu, ngakumbi ukungcola kusebenze ngokupheleleyo, kodwa akuncedi ukuthintela ukusasazwa kokungcola.
Ngenxa yokuba izixhobo ze-RTP zineempawu zokunyuka ngokukhawuleza kweqondo lokushisa / ukuwa kunye nexesha elifutshane, inkqubo yokucima emva kokufakelwa kwe-ion inokufezekisa ukhetho olufanelekileyo lweparameter phakathi kokulungiswa kwe-lattice defect, activation yokungcola kunye nokungcola kokusabalalisa ukungcola.
I-RTA yohlulwe ikakhulu kwezi ndidi zine zilandelayo:
(1)Spike Annealing
Uphawu lwayo kukuba igxile ekufudumezeni ngokukhawuleza / inkqubo yokupholisa, kodwa ngokusisiseko ayinayo inkqubo yokugcina ukushisa. I-spike annealing ihlala kwindawo ephezulu yobushushu ixesha elifutshane kakhulu, kwaye umsebenzi wayo ophambili kukuvuselela i-doping elements.
Kwizicelo ezizizo, iwafer iqala ukutshisa ngokukhawuleza ukusuka kwindawo ethile ezinzileyo yokulinda kwaye iphole kwangoko emva kokufikelela kwindawo ekujoliswe kuyo lobushushu.
Ekubeni ixesha lokugcinwa kwindawo ekujoliswe kuyo lobushushu (oko kukuthi, iqondo eliphezulu lobushushu) lifutshane kakhulu, inkqubo yokufunxa inokwandisa iqondo lokusebenzisa ukungcola kwaye inciphise iqondo lokusasazwa kokungcola, ngelixa ineempawu zokulungisa i-annealing enesiphene, nto leyo ekhokelela ekubeni ibe phezulu. umgangatho wokudibanisa kunye nokuvuza okuphantsi kwangoku.
I-Spike annealing isetyenziswa kakhulu kwiinkqubo zokudityaniswa kwe-ultra-shallow emva kwe-65nm. Iiparamitha zenkqubo ye-spike annealing ikakhulu ibandakanya ubushushu obuphezulu, ixesha lokuhlala kwincochoyi, umahluko wobushushu kunye nokumelana ne-wafer emva kwenkqubo.
Elifutshane ixesha lokuhlala eliphakamileyo, lingcono. Ikakhulu ixhomekeke kwiqondo lokushisa / lokupholisa inkqubo yokulawula ubushushu, kodwa inkqubo ekhethiweyo yegesi umoya ngamanye amaxesha nayo inempembelelo ethile kuyo.
Ngokomzekelo, i-helium inomthamo omncinci we-athomu kunye nesantya sokusasazwa ngokukhawuleza, okulungele ukugqithiswa kobushushu okukhawulezayo kunye okufanayo kunye nokunciphisa ububanzi obuphezulu okanye ixesha lokuhlala. Ngoko ke, i-helium ngamanye amaxesha ikhethwa ukuncedisa ukufudumeza nokupholisa.
(2)Ukufakwa kwesibane
Itekhnoloji yokucoca isibane isetyenziswa kakhulu. Izibane zeHalogen zisetyenziswa ngokubanzi njengemithombo yobushushu ekhawulezayo yokurhola. Amazinga abo aphezulu okufudumeza / okupholisa kunye nokulawula ukushisa okuchanekileyo kunokuhlangabezana neemfuno zeenkqubo zokuvelisa ngaphezu kwe-65nm.
Nangona kunjalo, ayikwazi ukuhlangabezana ngokupheleleyo neemfuno ezingqongqo zenkqubo ye-45nm (emva kwenkqubo ye-45nm, xa uqhagamshelwano lwe-nickel-silicon ye-logic LSI lwenzeka, i-wafer idinga ukufudumeza ngokukhawuleza ukusuka kwi-200 ° C ukuya kwi-1000 ° C ngaphakathi kwe-milliseconds, ngoko ke i-laser annealing iyafuneka ngokubanzi).
(3)Ukukhutshwa kweLaser
I-laser annealing yinkqubo yokusebenzisa ngokuthe ngqo i-laser ukunyusa ngokukhawuleza ubushushu bomphezulu we-wafer de yanele ukunyibilikisa i-silicon crystal, iyenze isebenze kakhulu.
Iingenelo ze-laser annealing kukufudumeza okukhawuleza kakhulu kunye nolawulo olubuthathaka. Ayifuni ukufudumeza i-filament kwaye akukho ngxaki nge-lag yeqondo lokushisa kunye nobomi be-filament.
Nangona kunjalo, ngokwembono yobugcisa, i-laser annealing ineengxaki zangoku ezivuzayo kunye ne-residue defect, eziya kuba nefuthe elithile ekusebenzeni kwesixhobo.
(4)I-Flash Annealing
I-Flash annealing bubuchwephesha bokutshisa obusebenzisa ukusasazeka kwemitha ephezulu ukwenza i-spike annealing kwi-wafers kwiqondo lobushushu elithile langaphambi kobushushu.
I-wafer ifudumala ukuya kwi-600-800 ° C, kwaye emva koko imitha ye-high-intensity isetyenziselwa i-pulse irradiation yexesha elifutshane. Xa ubushushu obuphezulu be-wafer bufikelela kwiqondo lokushisa elifunekayo, i-radiation iyacinywa ngoko nangoko.
Izixhobo ze-RTP zisanda kusetyenziswa kwimveliso yesekethe edibeneyo.
Ukongeza kokusetyenziswa ngokubanzi kwiinkqubo ze-RTA, izixhobo ze-RTP ziye zaqala ukusetyenziswa kwi-oxidation ye-thermal ekhawulezayo, i-nitridation ye-thermal esheshayo, i-thermal diffusion, i-chemical vapor deposition, kunye ne-metal silicide generation kunye neenkqubo ze-epitaxial.
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Ixesha lokuposa: Aug-27-2024