Inkqubo yokulungiselela ikristale yembewu kwi-SiC enye yokukhula kwekristale 3

Ukuqinisekisa Ukukhula
Ii-silicon carbide (SiC)iikristale zembewu zalungiswa ngokulandela inkqubo echaziweyo kwaye yaqinisekiswa ngokukhula kwekristale yeSiC. Iqonga lokukhula elisetyenzisiweyo yayiyi-furnace yokukhula ye-SiC yokuphuhlisa ngokwayo kunye nokushisa kokukhula kwe-2200 ℃, uxinzelelo lokukhula kwe-200 Pa, kunye nexesha lokukhula kweeyure ze-100.

Ukulungiselela kubandakanyeke aI-6-intshi ye-SiC waferkunye nobuso bekhabhoni kunye nesilicon ekhazimlisiweyo, aiqhekezana lesonkaukufana kobukhulu be ≤10 µm, kunye noburhabaxa bobuso besilicon ye ≤0.3 nm. Idayamitha eyi-200 mm, i-500 µm yephepha elishinyeneyo legraphite, kunye neglu, utywala, kunye nelaphu elingena-lint nazo zalungiswa.

IIqhekeza leSiCi-spin-coated kunye ne-adhesive kwi-bonding surface ye-15 imizuzwana kwi-1500 r / min.

I-adhesive kwi-bonding surface yeIqhekeza leSiCyomiswa kwi hot plate.

Iphepha legraphite kunyeIqhekeza leSiC(umphezulu odityanisiweyo ujonge ezantsi) zapakishwa ukusuka ezantsi ukuya phezulu zaza zafakwa kwiziko lembewu yekristale eshushu. Ucinezelo olushushu lwenziwa ngokwenkqubo yokucofa okusetwe kwangaphambili. Umzobo we-6 ubonisa indawo yekristale yembewu emva kwenkqubo yokukhula. Kuyabonakala ukuba umphezulu wekristale yembewu ugudile kwaye akukho zimpawu ze-delamination, ebonisa ukuba iikristale zembewu yeSiC ezilungiselelwe kwesi sifundo zinomgangatho olungileyo kunye nomgangatho oxineneyo wokudibanisa.

Ukuqukumbela
Ukuqwalasela iindlela zangoku zokudibanisa kunye nokuxhoma ukulungiswa kwe-crystal yembewu, ukudibanisa okudibeneyo kunye nendlela yokuxhoma yacetywayo. Olu pho nonongo lujolise ekulungiseleleni ifilimu yekhabhoni kunyeiqhekezana lesonka/igraphite paper bonding process efunekayo kule ndlela, ekhokelela kwezi zigqibo zilandelayo:

I-viscosity ye-adhesive efunekayo kwifilimu ye-carbon kwi-wafer kufuneka ibe yi-100 mPa · s, kunye nokushisa kwe-carbonization ye-≥600℃. Indawo efanelekileyo ye-carbonization yi-argon-protected atmosphere. Ukuba kwenziwa phantsi kweemeko zevacuum, idigri yevacuum kufuneka ibe ≤1 Pa.

Zombini iinkqubo ze-carbonization kunye ne-bonding zifuna ukunyangwa kweqondo lokushisa eliphantsi kwe-carbonization kunye ne-adhesives edibeneyo kwi-wafer surface ukukhupha iigesi kwi-adhesive, ukuthintela ukukhupha kunye neziphene ezingenanto kwi-bonding layer ngexesha le-carbonization.

I-adhesive edibeneyo yephepha le-wafer / i-graphite kufuneka ibe ne-viscosity ye-25 mPa·s, kunye noxinzelelo lwe-bonding ≥15 kN. Ngexesha lenkqubo yokudibanisa, ubushushu kufuneka buphakanyiswe kancinci kwiqondo lobushushu obuphantsi (<120℃) ngaphezulu kweeyure eziyi-1.5. Ukuqinisekiswa kokukhula kwekristale ye-SiC kuqinisekisile ukuba i-crystals ye-SiC elungisiweyo ihlangabezana neemfuno zokukhula kwe-crystal ye-SiC ephezulu, kunye neendawo ezigudileyo ze-crystal zembewu kwaye akukho mvula.